MURF1660CTG Switch-mode Power Rectifier These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • • • • • http://onsemi.com Ultrafast 60 Nanosecond Recovery Times 150°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in High Temperature Glass Passivated Junction Low Leakage Specified @ 150°C Case Temperature Current Derating @ Both Case and Ambient Temperatures Electrically Isolated. No Isolation Hardware Required. This is a Pb−Free Package* ULTRAFAST RECTIFIER 16 AMPERES, 600 VOLTS 1 2 3 MARKING DIAGRAM Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ISOLATED TO−220 CASE 221AH MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current Total Device, (Rated VR), TC = 150°C Per Diode Per Device IF(AV) A 8 16 Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 150°C IFM 16 A Non−repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 A TJ, Tstg − 65 to +150 °C Operating Junction and Storage Temperature RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 1) Per Figure 3 Viso1 V 1 2 AYWW U1660G AKA 3 A Y WW U1660 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device Package Shipping MURF1660CTG TO−220 (Pb−Free) 50 Units / Rail 4500 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Proper strike and creepage distance must be provided. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 February, 2014 − Rev. 6 1 Publication Order Number: MURF1660CT/D MURF1660CTG THERMAL CHARACTERISTICS (Per Leg) Characteristic Maximum Thermal Resistance, Junction−to−Case Symbol Value Unit RqJC 3.0 °C/W TL 260 °C Symbol Value Unit Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 8.0 A, TC = 150°C) (iF = 8.0 A, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 150°C) (Rated DC Voltage, TC = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A) trr 1.20 1.50 500 10 60 50 V mA ns i F , INSTANTANEOUS FORWARD CURRENT (AMPS) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 100 50 TJ = 150°C 20 100°C 25°C 10 5 2 1 0.5 0.2 0.1 0.4 0.6 1.0 1.2 0.8 1.4 vF, INSTANTANEOUS VOLTAGE (V) 1.6 1.8 Figure 1. Typical Forward Voltage, Per Leg 10 K I R, REVERSE CURRENT (A) μ 1.0 K 100 TJ = 150°C 10 100°C 1.0 25°C 0.1 0.01 100 200 300 400 VR, REVERSE VOLTAGE (V) 500 Figure 2. Typical Reverse Current, Per Leg* http://onsemi.com 2 600 MURF1660CTG TEST CONDITION FOR ISOLATION TEST* FULLY ISOLATED PACKAGE LEADS HEATSINK 0.110, MIN Figure 3. Mounting Position * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION CLIP HEATSINK Clip−Mounted Figure 4. Typical Mounting Technique http://onsemi.com 3 MURF1660CTG PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE E A E B P E/2 0.14 Q D M B A M A H1 A1 C NOTE 3 1 2 3 L L1 3X 3X b2 SEATING PLANE c b 0.25 M B A M C A2 e NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.90 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.70 7.10 12.70 14.73 --2.10 3.00 3.40 2.80 3.20 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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