1N5908 D

1N5908
Preferred Device
1500 Watt Mosorbt Zener
Transient Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high-energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ONSemiconductor's exclusive, cost‐effective, highly reliable
Surmetic axial leaded package and are ideally‐suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
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Cathode
Anode
Features
•Working Peak Reverse Voltage Range - 5.0 V
•Peak Power - 1500 Watts @ 1 ms
•Maximum Clamp Voltage @ Peak Pulse Current
•Low Leakage < 5 mA Above 10 V
•Response Time is Typically < 1 ns
•These are Pb-Free Devices*
AXIAL LEAD
CASE 41A
PLASTIC
MARKING DIAGRAM
Mechanical Characteristics
CASE: Void‐free, transfer‐molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
A
1N
5908
YYWW
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
A
= Assembly Location
1N5908 = JEDEC Device Number
YY
= Year
WW
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
1N5908G
Axial Lead
(Pb-Free)
500 Units/Box
1N5908RL4G
Axial Lead
(Pb-Free)
1500/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 5
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
1N5908/D
1N5908
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL ≤ 25°C
Rating
PPK
1500
W
Steady State Power Dissipation
@ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C
PD
5.0
W
50
mW/°C
Thermal Resistance, Junction-to-Lead
RqJL
20
°C/W
Forward Surge Current (Note 2) @ TA = 25°C
IFSM
200
A
TJ, Tstg
-65 to +175
°C
Operating and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Bidirectional device will not be available in this device
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IF
Parameter
VC VBR VRWM
Working Peak Reverse Voltage
IR VF
IT
Maximum Reverse Leakage Current @ VRWM
V
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
IPP
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 53 A)
Device
(Note 4)
Breakdown Voltage
VRWM
(Note 5)
IR @ VRWM
(Volts)
(mA)
VBR
Min
(Note 6) (Volts)
Nom
Max
VC (Volts) (Note 7)
@ IT
(mA)
@ IPP = 120 A
@ IPP = 60 A
@ IPP = 30 A
1N5908
5.0
300
6.0
1.0
8.5
8.0
7.6
3. Square waveform, PW = 8.3 ms, Non-repetitive duty cycle.
4. 1N5908 is JEDEC registered as a unidirectional device only (no bidirectional option)
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltages in VBR are to be controlled.
7. Surge current waveform per Figure 4 and derate per Figure 2 of the General Data - 1500 W at the beginning of this group
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2
1N5908
PPK , PEAK POWER (kW)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
10
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA= 25° C
100
1
0.1ms
1ms
10ms
100ms
1 ms
100
80
60
40
20
0
0
10 ms
25
50
tP, PULSE WIDTH
Figure 2. Pulse Derating Curve
PEAK VALUE - IPP
100
3/8″
VALUE (%)
5
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF IPP.
tr ≤ 10ms
3/8″
4
3
HALF VALUE -
IPP
2
50
2
tP
1
0
0
0
25
50
75
100 125 150 175
TL, LEAD TEMPERATURE (°C)
200
0
1
2
Figure 4. Pulse Waveform
1
0.7
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
100 ms
0.02
10 ms
0.01
0.1
0.2
0.5
3
t, TIME (ms)
Figure 3. Steady State Power Derating
DERATING FACTOR
PD , STEADY STATE POWER DISSIPATION (WATTS)
Figure 1. Pulse Rating Curve
75
100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
1
2
5
10
D, DUTY CYCLE (%)
20
50
100
Figure 5. Typical Derating Factor for Duty Cycle
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3
4
1N5908
APPLICATION NOTES
RESPONSE TIME
placing the suppressor device as close as possible to the
equipment or components to be protected will minimize this
overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated with
the capacitance of the device and an overshoot condition
associated with the inductance of the device and the inductance
of the connection method. The capacitance effect is of minor
importance in the parallel protection scheme because it only
produces a time delay in the transition from the operating
voltage to the clamp voltage as shown in Figure 6.
The inductive effects in the device are due to actual turn‐on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces an
overshoot in the voltage across the equipment or component
being protected as shown in Figure 7. Minimizing this
overshoot is very important in the application, since the main
purpose for adding a transient suppressor is to clamp voltage
spikes. These devices have excellent response time, typically
in the picosecond range and negligible inductance. However,
external inductive effects could produce unacceptable
overshoot. Proper circuit layout, minimum lead lengths and
DUTY CYCLE DERATING
The data of Figure 1 applies for non‐repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 5. Average power must be derated as the lead or ambient
temperature rises above 25°C. The average power derating
curve normally given on data sheets may be normalized and
used for this purpose.
At first glance the derating curves of Figure 5 appear to be
in error as the 10 ms pulse has a higher derating factor than the
10 ms pulse. However, when the derating factor for a given
pulse of Figure 5 is multiplied by the peak power value of
Figure 1 for the same pulse, the results follow the expected
trend.
TYPICAL PROTECTION CIRCUIT
Zin
LOAD
Vin
V
VL
Vin (TRANSIENT)
V
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
VL
Vin (TRANSIENT)
VL
Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 6.
Figure 7.
CLIPPER BIDIRECTIONAL DEVICES
1. Clipper‐bidirectional devices are available in the
3. The 1N6267A through 1N6303A series are JEDEC
1.5KEXXA series and are designated with a “CA” suffix;
registered devices and the registration does not include a
for example, 1.5KE18CA. Contact your nearest ON
“CA” suffix. To order clipper‐bidirectional devices one
Semiconductor representative.
must add CA to the 1.5KE device title.
2. Clipper‐bidirectional part numbers are tested in both
directions to electrical parameters in preceeding table
(except for VF which does not apply).
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1N5908
PACKAGE DIMENSIONS
MOSORB
CASE 41A-04
ISSUE D
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIMENSION P.
4. 041A-01 THRU 041A-03 OBSOLETE, NEW
STANDARD 041A-04.
D
K
P
P
DIM
A
B
D
K
P
A
INCHES
MIN
MAX
0.335
0.374
0.189
0.209
0.038
0.042
1.000
----0.050
MILLIMETERS
MIN
MAX
8.50
9.50
4.80
5.30
0.96
1.06
25.40
----1.27
K
Mosorb and Surmetic is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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1N5908/D
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