1N6267A D

1N6267A Series
1500 Watt Mosorbt Zener
Transient Voltage
Suppressors
Unidirectional*
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Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Cathode
AXIAL LEAD
CASE 41A
PLASTIC
Features
•
•
•
•
•
•
•
•
MARKING DIAGRAM
Working Peak Reverse Voltage Range − 5.8 V to 214 V
Peak Power − 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb−Free Packages are Available
A
1.5KE
xxxA
1N6
xxxA
YYWWG
G
A
1.5KExxxA
1N6xxxA
YY
WW
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
= Assembly Location
= ON Device Code
= JEDEC Device Code
= Year
= Work Week
= (See Table on Page 3)
G
= Pb−Free Package
(Note: Microdot may be in either location)
readily solderable
ORDERING INFORMATION
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16 in from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
July, 2005 − Rev. 7
Package
Shipping †
1.5KExxxA
Axial Lead
500 Units/Box
1.5KExxxAG
Axial Lead
(Pb−Free)
500 Units/Box
1.5KExxxARL4
Axial Lead
1500/Tape & Reel
1.5KExxxARL4G
Axial Lead
(Pb−Free)
1500/Tape & Reel
1N6xxxA
Axial Lead
500 Units/Box
1N6xxxAG
Axial Lead
(Pb−Free)
500 Units/Box
1N6xxxARL4
Axial Lead
1500/Tape & Reel
1N6xxxARL4G
Axial Lead
(Pb−Free)
1500/Tape & Reel
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
Anode
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
1N6267A/D
1N6267A Series
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL ≤ 25°C
Rating
PPK
1500
W
Steady State Power Dissipation
@ TL ≤ 75°C, Lead Length = 3/8 in
Derated above TL = 75°C
PD
5.0
W
20
mW/°C
Thermal Resistance, Junction−to−Lead
RqJL
20
°C/W
Forward Surge Current (Note 2) @ TA = 25°C
IFSM
200
A
TJ, Tstg
− 65 to +175
°C
Operating and Storage
Temperature Range
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
NOTES: Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max., IF (Note 3) = 100 A)
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
QVBR
I
Parameter
IF
Working Peak Reverse Voltage
VC VBR VRWM
Maximum Reverse Leakage Current @ VRWM
IR VF
IT
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
IPP
Uni−Directional TVS
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2
V
1N6267A Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)
Breakdown Voltage
VRWM
(Note 5)
IR @ VRWM
(Volts)
(mA)
Min
Nom
VC @ IPP (Note 7)
Device†
JEDEC
Device†
(Note 4)
1.5KE6.8A, G
1.5KE7.5A, G
1.5KE8.2A, G
1.5KE9.1A, G
1N6267A, G
1N6268A, G
1N6269A, G
1N6270A, G
5.8
6.4
7.02
7.78
1000
500
200
50
6.45
7.13
7.79
8.65
6.8
7.5
8.2
9.1
7.14
7.88
8.61
9.55
10
10
10
1
10.5
11.3
12.1
13.4
143
132
124
112
0.057
0.061
0.065
0.068
1.5KE10A, G
1.5KE11A, G
1.5KE12A, G
1.5KE13A, G
1N6271A, G
1N6272A, G
1N6273A, G
1N6274A, G
8.55
9.4
10.2
11.1
10
5
5
5
9.5
10.5
11.4
12.4
10
11
12
13
10.5
11.6
12.6
13.7
1
1
1
1
14.5
15.6
16.7
18.2
103
96
90
82
0.073
0.075
0.078
0.081
1.5KE15A, G
1.5KE16A, G
1.5KE18A, G
1.5KE20A, G
1N6275A, G
1N6276A, G
1N6277A, G
1N6278A, G
12.8
13.6
15.3
17.1
5
5
5
5
14.3
15.2
17.1
19
15
16
18
20
15.8
16.8
18.9
21
1
1
1
1
21.2
22.5
25.2
27.7
71
67
59.5
54
0.084
0.086
0.088
0.09
1.5KE22A,
1.5KE24A,
1.5KE27A,
1.5KE30A,
G
G
G
G
1N6279A, G
1N6280A, G
1N6281A, G
1N6282A, G
18.8
20.5
23.1
25.6
5
5
5
5
20.9
22.8
25.7
28.5
22
24
27
30
23.1
25.2
28.4
31.5
1
1
1
1
30.6
33.2
37.5
41.4
49
45
40
36
0.092
0.094
0.096
0.097
1.5KE33A, G
1.5KE36A, G
1.5KE39A, G
1.5KE43A, G
1N6283A, G
1N6284A, G
1N6285A, G
1N6286A, G
28.2
30.8
33.3
36.8
5
5
5
5
31.4
34.2
37.1
40.9
33
36
39
43
34.7
37.8
41
45.2
1
1
1
1
45.7
49.9
53.9
59.3
33
30
28
25.3
0.098
0.099
0.1
0.101
1.5KE47A, G
1.5KE51A, G
1.5KE56A, G
1.5KE62A, G
1N6287A, G
1N6288A, G
1N6289A, G
1N6290A, G
40.2
43.6
47.8
53
5
5
5
5
44.7
48.5
53.2
58.9
47
51
56
62
49.4
53.6
58.8
65.1
1
1
1
1
64.8
70.1
77
85
23.2
21.4
19.5
17.7
0.101
0.102
0.103
0.104
1.5KE68A,
1.5KE75A,
1.5KE82A,
1.5KE91A,
G
G
G
G
1N6291A, G
1N6292A, G
1N6293A, G
1N6294A, G
58.1
64.1
70.1
77.8
5
5
5
5
64.6
71.3
77.9
86.5
68
75
82
91
71.4
78.8
86.1
95.5
1
1
1
1
92
103
113
125
16.3
14.6
13.3
12
0.104
0.105
0.105
0.106
1.5KE100A, G
1.5KE110A, G
1.5KE120A, G
1.5KE130A, G
1N6295A, G
1N6296A, G
1N6297A, G
1N6298A, G
85.5
94
102
111
5
5
5
5
95
105
114
124
100
110
120
130
105
116
126
137
1
1
1
1
137
152
165
179
11
9.9
9.1
8.4
0.106
0.107
0.107
0.107
1.5KE150A,
1.5KE160A,
1.5KE170A,
1.5KE180A,
G
G
G
G
1N6299A, G
1N6300A, G
1N6301A, G
1N6302A, G*
128
136
145
154
5
5
5
5
143
152
162
171
150
160
170
180
158
168
179
189
1
1
1
1
207
219
234
246
7.2
6.8
6.4
6.1
0.108
0.108
0.108
0.108
1.5KE200A, G
1.5KE220A, G
1.5KE250A, G
1N6303A, G
171
185
214
5
5
5
190
209
237
200
220
250
210
231
263
1
1
1
274
328
344
5.5
4.6
5
0.108
0.109
0.109
@ IT
VC
IPP
QVBR
Max
(mA)
(Volts)
(A)
(%/°C)
VBR (Note 6) (Volts)
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at an ambient temperature of 25°C
7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
†The “G” suffix indicates Pb−Free package available.
*Not Available in the 1500/Tape & Reel
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3
100
PPK , PEAK POWER (kW)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25°C
1N6267A Series
100
10
1
0.1ms
1ms
10ms
1 ms
100ms
80
60
40
20
0
10 ms
0
25
50
tP, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
10,000
1N6267A/1.5KE6.8A
through
1N6303A/1.5KE200A
10,000
MEASURED @
ZERO BIAS
MEASURED @
ZERO BIAS
1000
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
1000
MEASURED @ VRWM
100
10
75
100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
1
10
100
1000
MEASURED @ VRWM
100
10
1
10
VBR, BREAKDOWN VOLTAGE (VOLTS)
100
1000
VBR, BREAKDOWN VOLTAGE (VOLTS)
PEAK VALUE − IPP
100
3/8″
5
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP.
tr ≤ 10ms
tr
3/8″
IPP, VALUE (%)
PD , STEADY STATE POWER DISSIPATION (WATTS)
Figure 3. Capacitance versus Breakdown Voltage
4
3
HALF VALUE −
50
IPP
2
2
tP
1
0
0
25
50
75
100 125 150 175
TL, LEAD TEMPERATURE (°C)
0
200
0
1
2
3
t, TIME (ms)
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
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4
4
1N6267A Series
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1000
500
VBR(NOM)=6.8 to 13V
20V
43V
24V
TL=25°C
tP=10ms
200
IT , TEST CURRENT (AMPS)
IT , TEST CURRENT (AMPS)
1000
500
1.5KE6.8CA
through
1.5KE200CA
100
50
20
10
5
200
43V
75V
100
50
20
180V
10
120V
5
2
2
1
1
0.3
0.5 0.7 1
2
3
5 7 10
20 30
DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
VBR(NOM)=6.8 to 13V
20V
24V
TL=25°C
tP=10ms
0.3
0.5 0.7 1
2
3
5 7 10
20 30
DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
Figure 6. Dynamic Impedance
1
0.7
0.5
DERATING FACTOR
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
100 ms
0.02
10 ms
0.01
0.1
0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50
100
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
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5
1N6267A Series
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
TYPICAL PROTECTION CIRCUIT
Zin
LOAD
Vin
V
V
Vin (TRANSIENT)
VL
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
Vin (TRANSIENT)
VL
VL
Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 8.
Figure 9.
UL RECOGNITION*
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric VoltageWithstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA
CLIPPER BIDIRECTIONAL DEVICES
1. Clipper-bidirectional devices are available in the
1.5KEXXA series and are designated with a “CA”
suffix; for example, 1.5KE18CA. Contact your nearest
ON Semiconductor representative.
2. Clipper-bidirectional part numbers are tested in both
directions to electrical parameters in preceding table
(except for VF which does not apply).
3. The 1N6267A through 1N6303A series are JEDEC
registered devices and the registration does not include
a “CA” suffix. To order clipper-bidirectional devices
one must add CA to the 1.5KE device title.
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6
1N6267A Series
OUTLINE DIMENSIONS
MOSORB
CASE 41A−04
ISSUE D
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIMENSION P.
4. 041A−01 THRU 041A−03 OBSOLETE, NEW
STANDARD 041A−04.
D
K
P
P
DIM
A
B
D
K
P
A
K
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7
INCHES
MIN
MAX
0.335
0.374
0.189
0.209
0.038
0.042
1.000
−−−
−−− 0.050
MILLIMETERS
MIN
MAX
8.50
9.50
4.80
5.30
0.96
1.06
25.40
−−−
−−−
1.27
1N6267A Series
Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
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8
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
1N6267A/D
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