BTA16 600SW3 D

BTA16-600SW3G,
BTA16-800SW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
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Features
•
•
•
•
•
•
•
•
•
TRIACS
16 AMPERES RMS
600 thru 800 VOLTS
Blocking Voltage to 800 V
On-State Current Rating of 16 A RMS at 25°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt − 250 V/ms minimum at 110°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating dI/dt − 2 A/ms minimum at 110°C
Internally Isolated (2500 VRMS)
These are Pb−Free Devices*
MT2
MT1
G
4
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA16−600SW3G
BTA16−800SW3G
VDRM,
VRRM
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 25°C)
IT(RMS)
16
A
ITSM
170
A
I2t
120
A2sec
VDSM/
VRSM
VDSM/VRSM
+100
V
IGM
4.0
A
1
Main Terminal 1
W
2
Main Terminal 2
3
Gate
4
No Connection
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
Non−Repetitive Surge Peak Off−State
Voltage (TJ = 25°C, t = 8.3 ms)
Peak Gate Current (TJ = 110°C, t ≤ 20 ms)
Value
Unit
V
1
600
800
Peak Gate Power
(Pulse Width ≤ 20 ms, TC = 80°C)
PGM
Average Gate Power (TJ = 110°C)
PG(AV)
1.0
W
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to +150
°C
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso
2500
V
Operating Junction Temperature Range
20
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2
BTA16−xSWG
AYWW
TO−220AB
CASE 221A
STYLE 12
3
x
A
Y
WW
G
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
ORDERING INFORMATION
Device
Package
Shipping
BTA16−600SW3G
TO−220AB
(Pb−Free)
50 Units / Rail
BTA16−800SW3G
TO−220AB
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 1
1
Publication Order Number:
BTA16−600SW3/D
BTA16−600SW3G, BTA16−800SW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Symbol
Value
Unit
RqJC
RqJA
2.13
60
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
0.005
2.0
−
−
1.55
2.0
2.0
2.0
−
−
−
10
10
10
−
−
20
−
−
−
−
−
−
25
30
25
0.5
0.5
0.5
−
−
−
1.3
1.3
1.3
0.2
0.2
0.2
−
−
−
−
−
−
(dI/dt)c
2.0
−
−
A/ms
Critical Rate of Rise of On−State Current
(TJ = 110°C, f = 120 Hz, IG = 20 mA, tr ≤ 100 ns)
dI/dt
−
−
50
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 110°C)
dV/dt
250
−
−
V/ms
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
IDRM/
IRRM
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ± 22.5 A Peak)
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±500 mA)
IH
Latching Current (VD = 12 V, IG = 12 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
Gate Trigger Voltage (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
Gate Non−Trigger Voltage (TJ = 110°C)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGD
V
mA
mA
mA
V
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 110°C, No Snubber)
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
BTA16−600SW3G, BTA16−800SW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
VTM
on state
IRRM at VRRM
IH
Quadrant 3
MainTerminal 2 −
IH
off state
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
BTA16−600SW3G, BTA16−800SW3G
110
24
22
PAV, AVERAGE POWER (WATTS)
TC, CASE TEMPERATURE (°C)
105
30°
60°
90°
100
95
90
85
120°
80
180°
75
DC
70
65
60
55
0
2
4
6
8
10
12
IT(RMS), RMS ON‐STATE CURRENT (AMP)
14
120°
16
14
12
10
8
90°
6
60°
4
2
0
16
DC
180°
20
18
30°
0
1000
100
16
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1·104
1000
Figure 4. Thermal Response
10
25
IH, HOLD CURRENT (mA)
I T, INSTANTANEOUS ON‐STATE CURRENT (AMP)
4
6
8
10
12
14
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
Figure 2. On-State Power Dissipation
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 1. Typical RMS Current Derating
2
1
TJ = 110°C
TJ = 25°C
TJ = -40°C
0.1
0
0.5
1
1.5
2
2.5
3
3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (V)
20
15
MT2 POSITIVE
10
MT2 NEGATIVE
5
0
−40 −25 −10
4
5
20
35
50
65
80
95 110
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On-State Characteristics
Figure 5. Typical Hold Current Variation
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4
BTA16−600SW3G, BTA16−800SW3G
2.0
18
VD = 12 V
RL = 30 W
Q3
16
VGT, GATE TRIGGER VOLTAGE (V)
IGT, GATE TRIGGER CURRENT (mA)
20
14
12
Q1
10
8
6
Q2
4
2
0
−40 −25 −10
5
20
35
50
65
80
95
110
VD = 12 V
RL = 30 W
1.8
1.6
1.4
Q1
1.2
1
Q3
0.8
0.6
Q2
0.4
0.2
0
−40 −25 −10
TJ, JUNCTION TEMPERATURE (°C)
5
20
35
50
65
80
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Voltage Variation
Figure 6. Typical Gate Trigger Current Variation
VD = 12 V
RL = 30 W
Q2
30
25
20
Q3
Q1
15
10
5
0
−40 −25 −10
5
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Latching Current Variation
LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
CHARGE
1N4007
MEASURE
I
TRIGGER
CHARGE
CONTROL
NON‐POLAR
CL
TRIGGER CONTROL
IL, LATCHING CURRENT (mA)
40
35
95
+
200 V
MT2
1N914 51 W
MT1
G
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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5
110
BTA16−600SW3G, BTA16−800SW3G
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE O
−T−
B
F
4
Q
T
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 12:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BTA16−600SW3/D
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