BTA30H 600CW3 D

BTA30H-600CW3G,
BTA30H-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
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Features
•
•
•
•
•
•
•
•
•
TRIACS
30 AMPERES RMS
600 thru 800 VOLTS
Blocking Voltage to 800 V
On-State Current Rating of 30 Amperes RMS at 95°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt − 500 V/ms minimum at 150°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package − Internally Isolated
High Commutating dI/dt − 4.0 A/ms minimum at 150°C
Internally Isolated (2500 VRMS)
These are Pb−Free Devices
MT2
MT1
G
MARKING
DIAGRAM
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 150°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA30H−600CW3G
BTA30H−800CW3G
VDRM,
VRRM
On-State RMS Current (Full Cycle Sine
Wave, 60 Hz, TC = 95°C)
IT(RMS)
30
A
ITSM
400
A
I2t
667
A2sec
VDSM/
VRSM
VDRM/VRRM
+100
V
IGM
4.0
A
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ
−40 to +150
°C
Storage Temperature Range
Tstg
−40 to +150
°C
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso
2500
V
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
Non−Repetitive Surge Peak Off−State
Voltage (TJ = 25°C, t = 8.3 ms)
Peak Gate Current (TJ = 150°C, t ≤ 20 ms)
Average Gate Power (TJ = 150°C)
Value
Unit
V
1
600
800
2
HT
BTA30−xCWG
AYWW
TO−220AB
CASE 221A
STYLE 12
3
x
A
Y
WW
G
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
No Connection
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Device
Package
Shipping
BTA30H−600CW3G
TO−220AB
(Pb−Free)
50 Units / Rail
BTA30H−800CW3G
TO−220AB
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 1
1
Publication Order Number:
BTA30H−600CW3/D
BTA30H−600CW3G, BTA30H−800CW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Symbol
Value
Unit
RqJC
RqJA
1.8
60
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Symbol
Characteristic
Min
Typ
Max
−
−
−
−
0.005
15
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 150°C
IDRM,
IRRM
mA
ON CHARACTERISTICS
Peak On-State Voltage (Notes 2 and 3)
(ITM = ± 42 A Peak)
VTM
−
−
1.55
V
Threshold Voltage, TJ = 150°C (Note 2)
Vto
−
−
0.85
V
Dynamic Resistance, TJ = 150°C (Note 2)
Rd
−
−
16
mW
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
8.0
8.0
8.0
−
−
−
35
35
35
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±100 mA)
IH
−
−
50
Latching Current (VD = 12 V, IG = 42 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
−
−
−
−
−
−
75
75
75
−
−
−
−
−
−
1.3
1.3
1.3
0.15
0.15
0.15
−
−
−
−
−
−
(dI/dt)c
4.0
−
−
A/ms
Critical Rate of Rise of On−State Current
(TJ = 150°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)
dI/dt
−
−
50
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 150°C)
dV/dt
500
−
−
V/ms
Gate Trigger Voltage (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
Gate Non−Trigger Voltage (TJ = 150°C)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGD
mA
mA
mA
V
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 150°C, No Snubber) (Note 4)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
3. For both polarities.
4. dv/dt(c) = 35 V/ms (exponential to 200 Vpk)
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2
BTA30H−600CW3G, BTA30H−800CW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VTM
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 −
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
(−) MT2
Quadrant III
Quadrant 1
MainTerminal 2 +
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
+ Voltage
IDRM at VDRM
150
145
140
135
130
125
120
115
110
105
100
95
90
85
80
40
PAV, AVERAGE POWER (W)
TC, CASE TEMPERATURE (°C)
BTA30H−600CW3G, BTA30H−800CW3G
0
5
10
15
20
25
35
30
25
20
15
10
5
0
0
30
5
10
15
20
25
30
IT(RMS), RMS ON-STATE CURRENT (A)
IT(RMS), ON-STATE CURRENT (A)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
1000
35
IH, HOLDING CURRENT (mA)
IT, INSTANTANEOUS ON−STATE CURRENT (A)
100
TJ = 150°C
10
30
25
20
MT2 NEGATIVE
15
10
MT2 POSITIVE
5
0
−40 −20
0
20
40
60
80
100 120
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Hold Current Variation
TJ = 25°C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VT, INSTANTANEOUS ON-STATE VOLTAGE (V)
Figure 3. On-State Characteristics
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4
140 160
BTA30H−600CW3G, BTA30H−800CW3G
1.30
VGT, GATE TRIGGER VOLTAGE (V)
VD = 12 V
RI = 30 W
20
Q3
15
Q1
Q2
10
5
0
−40 −20
0
20
40
60
80
100 120 140 160
1.10
VD = 12 V
RI = 30 W
Q1
Q3
0.90
0.70
Q2
0.50
0.30
0.10
−40 −20
0
20
40
60
80
100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Gate Trigger Current Variation
Figure 6. Gate Trigger Voltage Variation
75
VD = 12 V
RI = 30 W
65
55
45
Q1
Q2
Q3
35
25
15
−40 −20
0
20
40
60
80
100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Critical Rate of Rise of Commutating
Voltage
LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
CHARGE
1N4007
MEASURE
I
TRIGGER
CHARGE
CONTROL
NON‐POLAR
CL
TRIGGER CONTROL
IGT, GATE TRIGGER CURRENT (mA)
25
+
200 V
MT2
1N914 51 W
MT1
G
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 8. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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5
BTA30H−600CW3G, BTA30H−800CW3G
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE AA
−T−
B
F
T
SEATING
PLANE
C
S
4
Q
A
U
1 2 3
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 12:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6
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BTA30H−600CW3/D
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