1N5913B D

1N5913B Series
3 W DO−41 Surmetict 30
Zener Voltage Regulators
This is a complete series of 3 W Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon−oxide passivated junctions. All this in an axial−lead,
transfer−molded plastic package that offers protection in all common
environmental conditions.
Features
•
•
•
•
•
•
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Cathode
Anode
Zener Voltage Range − 3.3 V to 200 V
ESD Rating of Class 3 (>16 KV) per Human Body Model
Surge Rating of 98 W @ 1 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
Package No Larger than the Conventional 1 W Package
Pb−Free Packages are Available
AXIAL LEAD
CASE 59
PLASTIC
STYLE 1
Mechanical Characteristics
CASE: Void free, transfer−molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
MARKING DIAGRAM
readily solderable
A
1N
59xxB
YYWWG
G
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Max. Steady State Power Dissipation
@ TL = 75°C, Lead Length = 3/8″
Derate above 75°C
PD
3
W
24
mW/°C
Steady State Power Dissipation
@ TA = 50°C
Derate above 50°C
PD
1
W
6.67
mW/°C
−65 to
+200
°C
Operating and Storage
Temperature Range
TJ, Tstg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
A
= Assembly Location
1N59xxB = Device Number
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping †
1N59xxB, G
Axial Lead
(Pb−Free)
2000 Units/Box
1N59xxBRL, G
Axial Lead
(Pb−Free)
6000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 5
1
Publication Order Number:
1N5913B/D
1N5913B Series
ELECTRICAL CHARACTERISTICS
I
(TL = 30°C unless otherwise noted,
VF = 1.5 V Max @ IF = 200 mAdc for all types)
Symbol
IF
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IR
Reverse Leakage Current @ VR
VR
Breakdown Voltage
IF
Forward Current
VF
Forward Voltage @ IF
IZM
Maximum DC Zener Current
VZ VR
V
IR VF
IZT
Zener Voltage Regulator
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2
1N5913B Series
ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types)
Zener Voltage (Note 2)
VZ (Volts)
Zener Impedance (Note 3)
Leakage Current
@ IZT
ZZT @ IZT
Max
mA
W
W
mA
mA Max
Volts
mA
3.3
4.7
5.6
6.2
6.8
3.47
4.94
5.88
6.51
7.14
113.6
79.8
66.9
60.5
55.1
10
5
2
2
2.5
500
500
250
200
200
1
1
1
1
1
100
5
5
5
5
1
1.5
3
4
5.2
454
319
267
241
220
7.79
8.65
9.50
10.45
11.40
8.2
9.1
10
11
12
8.61
9.56
10.50
11.55
12.60
45.7
41.2
37.5
34.1
31.2
3.5
4
4.5
5.5
6.5
400
500
500
550
550
0.5
0.5
0.25
0.25
0.25
5
5
5
1
1
6.5
7
8
8.4
9.1
182
164
150
136
125
1N5929B
1N5930B
1N5931B
1N5932B
1N5933B
14.25
15.20
17.10
19.00
20.90
15
16
18
20
22
15.75
16.80
18.90
21.00
23.10
25.0
23.4
20.8
18.7
17.0
9
10
12
14
17.5
600
600
650
650
650
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
11.4
12.2
13.7
15.2
16.7
100
93
83
75
68
1N5934B, G
1N5935B, G
1N5936B, G
1N5937B, G
1N5938B, G
1N5934B
1N5935B
1N5936B
1N5937B
1N5938B
22.80
25.65
28.50
31.35
34.20
24
27
30
33
36
25.20
28.35
31.50
34.65
37.80
15.6
13.9
12.5
11.4
10.4
19
23
28
33
38
700
700
750
800
850
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
18.2
20.6
22.8
25.1
27.4
62
55
50
45
41
1N5940B, G
1N5941B, G
1N5942B, G
1N5943B, G
1N5944B, G
1N5940B
1N5941B
1N5942B
1N5943B
1N5944B
40.85
44.65
48.45
53.20
58.90
43
47
51
56
62
45.15
49.35
53.55
58.80
65.10
8.7
8.0
7.3
6.7
6.0
53
67
70
86
100
950
1000
1100
1300
1500
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
32.7
35.8
38.8
42.6
47.1
34
31
29
26
24
1N5946B, G
1N5947B, G
1N5948B, G
1N5950B, G
1N5946B
1N5947B
1N5948B
1N5950B
71.25
77.90
86.45
104.5
75
82
91
110
78.75
86.10
95.55
115.5
5.0
4.6
4.1
3.4
140
160
200
300
2000
2500
3000
4000
0.25
0.25
0.25
0.25
1
1
1
1
56
62.2
69.2
83.6
20
18
16
13
1N5951B, G
1N5952B, G
1N5953B, G
1N5954B, G
1N5955B, G
1N5951B
1N5952B
1N5953B
1N5954B
1N5955B
114
123.5
142.5
152
171
120
130
150
160
180
126
136.5
157.5
168
189
3.1
2.9
2.5
2.3
2.1
380
450
600
700
900
4500
5000
6000
6500
7000
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
91.2
98.8
114
121.6
136.8
12
11
10
9
8
1N5956B, G
1N5956B
190
200
210
1.9
1200
8000
0.25
1
152
7
Device†
(Note 1)
Device
Marking
Min
Nom
1N5913B, G
1N5917B, G
1N5919B, G
1N5920B, G
1N5921B, G
1N5913B
1N5917B
1N5919B
1N5920B
1N5921B
3.14
4.47
5.32
5.89
6.46
1N5923B, G
1N5924B, G
1N5925B, G
1N5926B, G
1N5927B, G
1N5923B
1N5924B
1N5925B
1N5926B
1N5927B
1N5929B, G
1N5930B, G
1N5931B, G
1N5932B, G
1N5933B, G
ZZK @ IZK
IR @ VR
IZM
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
†The “G’’ suffix indicates Pb−Free package available.
1. TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation − device tolerance of ±5% are indicated by a “B” suffix.
2. ZENER VOLTAGE (VZ) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C,
3/8″ from the diode body.
3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (IZT or IZK) is superimposed on IZT or IZK.
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3
PD, STEADY STATE DISSIPATION (WATTS)
1N5913B Series
5
L = LEAD LENGTH
TO HEAT SINK
L = 1/8″
4
L = 3/8″
3
2
L = 1″
1
0
0
20
40
60
80 100 120 140 160
TL, LEAD TEMPERATURE (°C)
180
200
Figure 1. Power Temperature Derating Curve
θJL(t, D) TRANSIENT THERMAL RESISTANCE
JUNCTION-TO-LEAD (° C/W)
30
20
10
7
5
3
2
1
0.7
0.5
D =0.5
0.2
0.1
t2
DUTY CYCLE, D =t1/t2
0.02
0.01
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
D=0
0.3
0.0001 0.0002
t1
PPK
0.05
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
t, TIME (SECONDS)
0.1
0.2
SINGLE PULSE DTJL = qJL (t)PPK
REPETITIVE PULSES DTJL = qJL (t,D)PPK
0.5
1
2
5
10
1K
RECTANGULAR
NONREPETITIVE
WAVEFORM
TJ=25°C PRIOR
TO INITIAL PULSE
500
300
200
100
50
30
3
2
1
0.5
0.2 0.3 0.5
1
2 3
5
10
PW, PULSE WIDTH (ms)
20 30 50
100
TA = 125°C
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0005
0.0003
20
10
0.1
IR , REVERSE LEAKAGE (μ Adc) @ VR
AS SPECIFIED IN ELEC. CHAR. TABLE
PPK , PEAK SURGE POWER (WATTS)
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
TA = 125°C
1
Figure 3. Maximum Surge Power
2
5
10
20
50 100
NOMINAL VZ (VOLTS)
200
400
Figure 4. Typical Reverse Leakage
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4
1000
1N5913B Series
APPLICATION NOTE
DTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
DTJL = qJL PD
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ (DTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
TL = qLA PD + TA
qLA is the lead-to-ambient thermal resistance (°C/W) and
PD is the power dissipation. The value for qLA will vary and
depends on the device mounting method. qLA is generally
30−40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
DV = qVZ DTJ
qVZ, the zener voltage temperature coefficient, is found
from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
TJ = TL + DTJL
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5
1N5913B Series
TEMPERATURE COEFFICIENT RANGES
10
1000
8
6
4
RANGE
2
0
−2
−4
θ VZ, TEMPERATURE COEFFICIENT (mV/° C) @ IZT
θ VZ, TEMPERATURE COEFFICIENT (mV/° C) @ IZT
(90% of the Units are in the Ranges Indicated)
3
4
5
6
7
8
9
10
VZ, ZENER VOLTAGE @ IZT (VOLTS)
11
12
500
200
100
50
20
10
10
20
50
100
200
400
VZ, ZENER VOLTAGE @ IZT (VOLTS)
Figure 5. Units To 12 Volts
1000
Figure 6. Units 10 To 400 Volts
ZENER VOLTAGE versus ZENER CURRENT
100
50
30
20
50
30
20
IZ , ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
(Figures 7, 8 and 9)
100
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2
3
4
5
6
7
VZ, ZENER VOLTAGE (VOLTS)
8
9
10
5
3
2
1
0.5
0.3
0.2
0.1
10
0
10
20
Figure 7. VZ = 3.3 thru 10 Volts
2
1
0.5
0.2
200
250
300
350
VZ, ZENER VOLTAGE (VOLTS)
400
θJL, JUNCTION-TO-LEAD THERMAL RESISTANCE (° C/W)
IZ , ZENER CURRENT (mA)
5
150
90
100
Figure 8. VZ = 12 thru 82 Volts
10
0.1
100
30
40
50
60
70
80
VZ, ZENER VOLTAGE (VOLTS)
80
70
60
50
L
40
L
30
TL
20
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
10
0
0
Figure 9. VZ = 100 thru 400 Volts
1/8
1/4
3/8
1/2
5/8
3/4
L, LEAD LENGTH TO HEAT SINK (INCH)
7/8
Figure 10. Typical Thermal Resistance
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6
1
1N5913B Series
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59−10
ISSUE U
B
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
D
F
A
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
DIM
A
B
D
F
K
F
K
INCHES
MIN
MAX
0.161 0.205
0.079 0.106
0.028 0.034
−−− 0.050
1.000
−−−
MILLIMETERS
MIN
MAX
4.10
5.20
2.00
2.70
0.71
0.86
−−−
1.27
25.40
−−−
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
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7
1N5913B Series
SURMETIC is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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1N5913B/D
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