EMI2121MT D

EMI2121, SZEMI2121
Single Pair Common Mode
Filter with ESD Protection
Description
The EMI2121 is an integrated common mode filter providing both
ESD protection and EMI filtering for high speed serial digital
interfaces such as USB2.0.
The EMI2121 provides EMI filtering for one differential data line
pair and ESD protection for one data pair plus a supply input such as
USB2.0 Vbus or USB ID pin. It is supplied in a small
RoHS−compliant WDFN8 package.
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SIMPLIFIED SCHEMATIC
External
(Connector)
1
Features
2
• Highly Integrated Common Mode Filter (CMF) with ESD Protection
•
•
•
•
•
•
•
provides protection and EMI Reduction for systems using high speed
Serial Data Lines with cost and space savings over Discrete Solutions
Large Differential Mode Bandwidth with Cutoff Frequency > 2 GHz
High Common Mode Stop Band Attenuation: >25 dB at 700 MHz,
>30 dB at 800 MHz Typical
Provides ESD Protection to IEC61000−4−2 Level 4, ±12 kV Contact
Discharge
Low Channel Input Capacitance provides Superior Impedance
Matching Performance
Low Profile Package with Small Footprint in WDFN8 2.0 mm length
x 2.2 mm width x 0.75 mm height Pb−Free Package
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
8
Internal
(ASIC)
7
6
3,4,5
MARKING
DIAGRAM
8
WDFN8
CASE 511BN
1
1
C2 MG
G
C2 = Specific Device Code
M = Date Code
G
= Pb−Free Device
(*Note: Microdot may be in either location)
PIN CONNECTIONS
In_1+
1
8
Out_1+
• USB2.0 and other High Speed Differential Data Lines in Mobile
In_1−
2
7
Out_1−
•
GND
3
6
VDD/ID
5
GND
Applications
Phones, Digital Still Cameras, and Automotive interfaces
MIPI D−PHY
GND
4
GND
(Top View)
ORDERING INFORMATION
Package
Shipping†
WDFN8
(Pb−Free)
3000/Tape & Reel
SZEMI2121MTTAG WDFN8
(Pb−Free)
3000/Tape & Reel
Device
EMI2121MTTAG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 2
1
Publication Order Number:
EMI2121MT/D
EMI2121, SZEMI2121
PIN DESCRIPTION
Pin No.
Pin Name
Type
1
In_1+
I/O
CMF Channel 1+ to Connector (External)
Description
2
In_1−
I/O
CMF Channel 1− to Connector (External)
8
Out_1+
I/O
CMF Channel 1+ to ASIC (Internal)
7
Out_1−
I/O
CMF Channel 1− to ASIC (Internal)
6
VDD/ID
I/O
Supply Protection to Connector (External)
3,4,5
GND
GND
Ground
MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
Symbol
Value
Units
Operating Temperature Range
TOP
−40 to +85
°C
Storage Temperature Range
TSTG
−65 to +150
°C
TL
260
°C
ILINE
100
mA
Parameter
Maximum Lead Temperature for Soldering Purposes (1/8” from Case for 10 Seconds)
DC Current per Line
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Channel Leakage Current
Symbol
ILEAK
Test Conditions
VF
TA = 25°C, IF = 10 mA
Channel Input Capacitance to ground
(Pins 1,2,4,5 to Pins 3,8)
CIN
TA = 25°C, At 1 MHz, GND = 0 V,
VIN = 1.65 V
Channel Resistance (Pins 1−16, 2−15, 4−13,
5−12, 7−10 and 9−9)
Rch
Differential Mode Cut*Off Frequency
f3dB
Common Mode Stop Band Attenuation
In−system ESD Withstand Voltage
a) Contact discharge per IEC 61000−4−2
standard, Level 4 (External Pins)
b) Contact discharge per IEC 61000−4−2
standard, Level 1 (Internal Pins)
Reverse Working Voltage
Breakdown Voltage
Typ
TA = 25°C, VIN = 5 V, GND = 0 V
Channel Negative Voltage
TLP Clamping Voltage (See Figure 9)
Min
0.1
0.8
Max
Unit
1.0
mA
1.5
V
1.3
pF
8.0
W
50 W source and load termination
2.0
GHz
Fatten
@ 800 MHz
30
dB
VESD
(Notes 1 and 2)
kV
±12
±2
VCL
VRWM
Forward IPP = 8 A
Forward IPP = 12 A
Reverse IPP = −8 A
Reverse IPP = −12 A
13
16
−6
−8.5
(Note 3)
5.0
V
9.0
V
VBR
IT = 1 mA; (Note 4)
Maximum Peak Pulse Current (Pin 6 to GND)
IPP
8x20 ms Waveform
12
A
Clamping Voltage (Pin 6 to GND)
VC
IPP = 5 A
10
V
Dynamic Resistance
Positive Transients
Negative Transients
RDYN
TA = 25C, IPP=1 A, tP= 8/20 us,
Any I/O to GND
5.5
V
V
V
V
0.67
0.59
W
W
1. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330, GND grounded.
2. These measurements performed with no external capacitor.
3. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
4. VBR is measured at pulse test current IT.
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2
EMI2121, SZEMI2121
I/O 1
I/O 8
I/O 2
I/O 7
EMI2121MT
2
4
Network Analyzer
1
3
Normal (Differential) Mode
Figure 1. Normal (Differential) Mode Test
Configuration
I/O 1
I/O 8
I/O 2
I/O 7
Differential Signal Driver and
Transmission Line
EMI2121MT
Figure 2. Application Circuit
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3
Differential Signal Buffer and
Transmission Line
EMI2121, SZEMI2121
TYPICAL CHARACTERISTICS
Figure 3. Differential Mode Attenuation vs.
Frequency (Zdiff = 100 W)
Figure 4. Common Mode Attenuation vs.
Frequency (Zcomm = 50 W)
Figure 5. Differential Return Loss vs. Frequency
(Zdiff=100 W)
Figure 6. Differential Impedance vs. Frequency
(Zdiff=100 W)
Figure 7. EMI2121 Measured Eye Diagram @ 480 Mbps
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4
EMI2121, SZEMI2121
Transmission Line Pulse (TLP) Measurements
Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a
100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in
Figure 8. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10 s
of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 9 where an 8 kV
IEC61000−4−2 current waveform is compared with TLP current pulses at 8 and 16 A. A TLP curve shows the voltage at which
the device turns on as well as how well the device clamps voltage over a range of current levels. Typical TLP I−V curves for
the EMI2121 are shown in Figure 10.
L
SW
Attenuator
50 W Coax Cable
÷
50 W Coax
Cable
IM
VM
10 MW
VC
DUT
Oscilloscope
Figure 8. Simplified Schematic of a Typical TLP System
Figure 9. Comparison Between 8 kV IEC61000−4−2 and 8 A and 16 A TLP Waveforms
-14
12
-12
10
-10
) 8
A
(t
n
re
r 6
u
C
-8
Current (A)
14
-6
4
-4
2
-2
0
0
0
2
4
6
8
10
12
14
16
0
18
-2
-4
-6
Voltage (V)
Voltage (V)
Figure 10. Positive and Negative TLP Waveforms
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5
-8
-10
EMI2121, SZEMI2121
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low
a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per
the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger systems such as cell phones
or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor
has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD
pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these screenshots and how to interpret them please refer to On Semiconductor
Application Notes AND8307/D and AND8308/D.
IEC61000−4−2 Waveform
IEC61000−4−2 Spec.
Ipeak
Level
Test
Voltage
(kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
Oscilloscope
TVS
50 W
Cable
50 W
Figure 11. Diagram of ESD Test Setup
100
% OF PEAK PULSE CURRENT
ESD Gun
PEAK VALUE IRSM @ 8 ms
tr
90
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
20
40
t, TIME (ms)
60
Figure 12. 8 x 20 ms Pulse Waveform
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6
80
EMI2121, SZEMI2121
Figure 13. ESD Clamping Voltage +8 kV per IEC6100−4−2 (external to internal pin)
Figure 14. ESD Clamping Voltage −8 kV per IEC6100−4−2 (external to internal pin)
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7
EMI2121, SZEMI2121
Micro USB
Connector
VBUS
ID
ID or Vbus
(red= inner layer )
EMI 2121
D+
D+
D−
D−
ID or VBUS
GND
(Top View)
Figure 15. EMI2121 Micro − USB Connector Application Diagram
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8
EMI2121, SZEMI2121
PACKAGE DIMENSIONS
WDFN8, 2.2x2, 0.5P
CASE 511BN
ISSUE A
PIN ONE
REFERENCE
2X
L
A B
D
ÉÉÉ
ÉÉÉ
ÉÉÉ
L1
E
DETAIL A
OPTIONAL
CONSTRUCTIONS
0.10 C
0.10 C
2X
ÇÇ
ÉÉ
EXPOSED Cu
TOP VIEW
A
DETAIL B
0.05 C
A1
DIM
A
A1
A3
b
b1
D
D2
E
E2
e
L
L1
L2
L3
OPTIONAL
CONSTRUCTIONS
A3
A1
SIDE VIEW
NOTE 4
ÉÉ
ÉÉ
ÇÇ
A3
MOLD CMPD
DETAIL B
9X
0.05 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.25 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
C
SEATING
PLANE
b1
0.10 C A B
DETAIL C
D2
1
4X
L2
L
8
b
0.10 C A B
DETAIL C
7X
0.54
0.30
PACKAGE
OUTLINE
0.80
5
e
NOTE 3
RECOMMENDED
SOLDERING FOOTPRINT*
L3
E2
0.10 C A B
7X
0.05 C
2X
4
MILLIMETERS
MIN
MAX
0.70
0.80
0.00
0.05
0.20 REF
0.15
0.25
0.25
0.35
2.20 BSC
0.34
0.54
2.00 BSC
0.60
0.80
0.50 BSC
0.75
0.95
0.05
0.15
0.30
0.50
0.15
0.25
DETAIL A
2.30
e/2
4X
4X
1.00
0.60
BOTTOM VIEW
1
0.40
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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9
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
EMI2121MT/D
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