TCET1110, TCET1110G www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C, Rated FEATURES • CTR offered in 9 groups C E 4 3 • Isolation materials according to UL 94 V-O • Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664) • Climatic classification 55/100/21 (IEC 60068 part 1) 1 2 A C • Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection • Low temperature coefficient of CTR • Temperature range - 40 °C to + 110 °C • Rated impulse VIOTM = 6 kVpeak 17197_4 voltage (transient overvoltage) • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV DESCRIPTION • Rated isolation VIOWM = 600 VRMS The TCET1110, TCET1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package. voltage (RMS includes DC) • Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak APPLICATIONS • Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 175 Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): • Thickness through insulation 4 mm • External creepage distance > 8 mm • for appl. class I to IV at mains voltage 300 V • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • for appl. class I to III at mains voltage 600 V according to DIN EN 60747-5-2 (VDE 0884), suitable for: - Switch-mode power supplies AGENCY APPROVALS - Line receiver • UL1577, file no. E52744, double protection - Computer peripheral interface • BSI: EN 60065:2002, EN 60950-1:2006 - Microprocessor system interface • DIN EN 60747-5-2 (VDE 0884) • FIMKO ORDERING INFORMATION DIP-4 T C E T 1 1 1 # PART NUMBER AGENCY CERTIFIED/PACKAGE - # PACKAGE OPTION 7.62 mm CTR (%) 5 mA 10 mA UL, VDE, BSI, FIMKO 50 to 600 63 to 125 100 to 200 160 to 320 DIP-4 TCET1110 TCET1112 TCET1113 TCET1114 - - TCET1113G TCET1114G DIP-4, 400 mil Rev. 2.0, 08-Aug-11 1 Document Number: 83546 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCET1110, TCET1110G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA IFSM 1.5 A Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V IC 50 mA ICM 100 mA tp 10 μs Forward surge current OUTPUT Collector current tp/T = 0.5, tp 10 ms Collector peak current COUPLER Isolation test voltage (RMS) VISO 5000 VRMS Operating ambient temperature range t=1s Tamb - 40 to + 110 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C 2 mm from case, 10 s Soldering temperature (1) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to wave profile for soldering conditions for through hole devices (DIP). THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT LED power dissipation Pdiss 70 mW Output power dissipation Pdiss 70 mW Maximum LED junction temperature Tjmax. 125 °C Maximum output die junction temperature Tjmax. 125 °C Thermal resistance, junction emitter to board EB 173 °C/W Thermal resistance, junction emitter to case EC 149 °C/W Thermal resistance, junction detector to board DB 111 °C/W Thermal resistance, junction detector to case DC 127 °C/W Thermal resistance, junction emitter to junction detector ED 173 °C/W BA 197 °C/W CA 4041 °C/W Thermal resistance, board to ambient (1) Thermal resistance, case to ambient (1) TA θCA Package TC θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 TA Notes • The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal Characteristics of Optocouplers” application note. (1) For 2 layer FR4 board (4" x 3" x 0.062"). Rev. 2.0, 08-Aug-11 2 Document Number: 83546 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCET1110, TCET1110G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage IF = 50 mA VF 1.25 VR = 0, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 100 μA VECO 7 V VCE = 20 V, IF = 0 A ICEO Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 fc 110 kHz f = 1 MHz Ck 0.6 pF Junction capacitance V pF OUTPUT Collector emitter cut-off current 10 100 nA 0.3 V COUPLER Coupling capacitance Note (1) Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA PART SYMBOL MIN. TYP. TCET1112, TCET1112G MAX. UNIT CTR 22 45 % TCET1113, TCET1113G CTR 34 70 % TCET1114, TCET1114G CTR 56 90 % TCET1110, TCET1110G CTR 50 600 % TCET1112, TCET1112G CTR 63 125 % TCET1113, TCET1113G CTR 100 200 % TCET1114, TCET1114G CTR 160 320 % SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8 kV Vpd 1.3 kV VIO = 500 V RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Insulation resistance Forward current Power dissipation Rated impulse voltage Safety temperature TYP. MAX. UNIT Isi 130 mA Pso 265 mW VIOTM 6 kV Tsi 150 °C Note • According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Rev. 2.0, 08-Aug-11 3 Document Number: 83546 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCET1110, TCET1110G www.vishay.com Vishay Semiconductors 300 VIOTM t1, t2 t3 , t4 ttest tstres Phototransistor Pso (mW) 250 200 = 1 s to 10 s =1s = 10 s = 12 s Vpd 150 VIOWM VIORM 100 IR-diode Isi (mA) 50 0 0 0 94 9182-2 25 50 75 100 125 t3 ttest t4 150 Tsi - Safety Temperature (°C) tTr = 60 s t1 13930 t2 t stres t Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-2 (VDE 0884)/IEC 60747-5-5 SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3) td 3 μs Rise time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3) tr 3 μs Fall time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3) tf 4.7 μs Storage time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3) ts 0.3 μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3) ton 6 μs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3) toff 5 μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 4) ton 9 μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 4) toff 10 μs IF +5V IF 0 MIN. IF TYP. R G = 50 Ω tp = 0.01 T UNIT +5V I F = 10 mA 0 I C = 2 mA; adjusted through input amplitude MAX. IC R G = 50 Ω tp = 0.01 T t p = 50 µs t p = 50 µs Channel I Channel II 50 Ω Channel I Oscilloscope R L = 1 MΩ C L = 20 pF Channel II 100 Ω 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 95 10804 Fig. 3 - Test Circuit, Non-Saturated Operation Rev. 2.0, 08-Aug-11 Fig. 4 - Test Circuit, Saturated Operation 4 Document Number: 83546 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCET1110, TCET1110G www.vishay.com Vishay Semiconductors IF 0 tp IC t 100 % 90 % 10 % 0 tr td tp td tr t on (= td + tr) t tf t off ts t on ts tf t off (= ts + tf) Pulse duration Delay time Rise time Turn-on time Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times CTRrel - Relative Current Transfer Ratio Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 300 Coupled Device 250 200 Phototransistor 150 IR–Diode 100 50 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) 16736 1.2 1.0 0.6 0.4 0.2 0 - 40 - 20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) 16737 Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature 10 000 ICEO - Collector Dark Current, with open Base (nA) 1000 IF - Forward Current (mA) VCE = 5 V IF = 5 mA 0.8 100 10 1 96 11862 0.4 0.8 1.2 1.6 16738 20 40 60 80 100 120 Tamb - Ambient Temperature Fig. 9 - Collector Dark Current vs. Ambient Temperature Fig. 7 - Forward Current vs. Forward Voltage Rev. 2.0, 08-Aug-11 10 1 0 2.0 VF - Forward Voltage (V) 10 V 100 0.1 0 VCE = 30 V 1000 5 Document Number: 83546 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCET1110, TCET1110G www.vishay.com Vishay Semiconductors CTR - Current Transfer Ratio (%) 100 IC - Collector Current (mA) VCE = 5 V 10 1 0.1 0.01 0.1 1 ton/toff- Turn-on /Turn-off Time (µs) IC - Collector Current (mA) 20 mA IF = 50 mA 10 mA 5 mA 2 mA 1 mA 0.1 0.1 95 10985 1 10 ton/toff - Turn-on/Turn-off Time (µs) 20 % used VCEsat - Collector Emitter Saturation Voltage (V) 8 Non-saturated operation VS = 5 V RL = 100 Ω ton 6 toff 4 2 0 2 4 8 6 IC - Collector Current (mA) Fig. 14 - Turn-on/off Time vs. Collector Current 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 0 50 Saturated operation VS = 5 V RL = 1 kΩ 40 30 toff 20 10 ton 0 100 0 IC - Collector Current (mA) 95 11031 5 10 15 20 IF - Forward Current (mA) Fig. 15 - Turn-on/off Time vs. Forward Current Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current Rev. 2.0, 08-Aug-11 100 10 10 0 1.0 10 1 IF - Forward Current (mA) 95 11030 Fig. 11 - Collector Current vs. Collector Emitter Voltage 1 1 0.1 100 VCE - Collector Emitter Voltage (V) 95 11028 10 Fig. 13 - Current Transfer Ratio vs. Forward Current 100 1 100 95 11029 Fig. 10 - Collector Current vs. Forward Current 10 VCE = 5 V 100 10 IF - Forward Current (mA) 95 11027 1000 6 Document Number: 83546 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCET1110, TCET1110G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 6.5 ± 0.3 Pin 1 identifier 7.62 to 9.5 4.58 ± 0.3 7.62 typ. 0.4 ± 0.1 3.5 ± 0.3 4.5 ± 0.3 2.8 ± 0.5 0° to 15° 1.3 ± 0.1 0.25 typ. 0.5 ± 0.1 2.54 typ. TCET1110G type 7.62 typ. 3.5 ± 0.3 0.1 min. 2.7 min. 10.16 typ. i178027-19 PACKAGE MARKING (example) ET1110 V YWW 24 Rev. 2.0, 08-Aug-11 7 Document Number: 83546 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000