3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M Datasheet

3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
e4
• High surge current capability
• High case dielectric strength
• Solder dip 275 °C max. 10 s, per JESD 22-B106
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• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
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TYPICAL APPLICATIONS
Case Style KBPM
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
PRIMARY CHARACTERISTICS
Package
KBPM
MECHANICAL DATA
IF(AV)
3.0 A
Case: KBPM
VRRM
50 V, 100 V, 200 V, 400 V, 600 V, 800 V
IFSM
80 A
IR
5 μA
VF at IF = 3.0 A
1.05 V
TJ max.
150 °C
Diode variations
In-Line
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated
J-STD-002 and JESD22-B102
leads,
solderable
per
Polarity: As marked on body

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
V
Maximum average forward output rectified
current at TA = 55 °C (Fig. 1)
IF(AV)
3.0
A
Peak forward surge current 50 Hz single half 
sine-wave superimposed on rated load
IFSM
80
A
I2t
32
A2s
TJ, TSTG
- 55 to + 150
°C
Rating for fusing (t < 10 ms)
Operating junction and storage temperature
range
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage drop per
diode
TEST
SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M
CONDITIONS
3.0 A
Maximum DC reverse
current at rated DC
blocking voltage per diode
TJ = 25 °C
Typical junction
capacitance per diode
4.0 V, 
1 MHz
Revision: 27-Jun-13
TJ = 125 °C
VF
1.05
UNIT
V
5.0
IR
CJ
500
25
μA
pF
Document Number: 88888
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M
Typical thermal resistance (1)
RJA
30
RJL
11
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.912
51
600
Anti-static PVC tray
3KBP06M-E4/51
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
10
Heat Sink Mounting:
3.0 x 3.0 x 0.11" Thick
(7.5 x 7.5 x 0.3 cm) Al. Plate
60 Hz
Resistive or
Inductive Load
3
With Heat Sink
2
Without Heat Sink
1
Instantaneous Forward Current (A)
Average Forward Current (A)
4
20
40
60
80
100
120
140
1
TJ = 125 °C
0.1
TJ = 25 °C
0.01
0.4
0
0
TJ = 150 °C
160
0.5
0.7
0.9
0.8
1.0
1.1
1.2
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 1 - Forward Current Derating Curve
100
Instantaneous Reverse Current (µA)
100
Peak Forward Surge Current (A)
0.6
Instantaneous Forward Voltage (V)
Ambient Temperature (°C)
80
60
40
20
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 27-Jun-13
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Forward Characteristics Per Diode
Document Number: 88888
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M
www.vishay.com
Vishay General Semiconductor
Junction Capacitance (pF)
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
100
10
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style KBPM
0.600 (15.24)
0.560 (14.22)
0.125 x 45°
(3.2)
0.460 (11.68) 0.500 (12.70)
0.420 (10.67) 0.460 (11.68)
0.60
(15.2)
MIN.
0.034 (0.86)
0.028 (0.76)
DIA.
0.200 (5.08)
0.180 (4.57)
0.50 (12.7) MIN.
0.060
(1.52)
0.160 (4.1)
0.140 (3.6)
0.105 (2.67)
0.085 (2.16)
Polarity shown on front side of case: positive lead by beveled corner
Revision: 27-Jun-13
Document Number: 88888
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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