SENSITRON _ SEMICONDUCTOR SS-100 SCREENING FLOW DATASHEET 323, REV H SS-100 SCREENING FLOW DISCRETE SEMICONDUCTORS (Not applicable for Axial & MELF Diodes) All parts procured with JAN-S Screening shall be 100% screened in accordance with the following procedure. SCREEN TEST / PROCESS NUMBER Die Visual 1a TEST CONDITIONS MIL-STD-750 TEST METHOD 2073 Condition B 2074 2069 Power FETs 2072 Transistors As specified 1b Internal Visual 2 Not Applicable 3a Temperature Cycling (Thermal Shock) 1051 No dwell time is required at +25 C. Test condition C, or maximum storage temperature, whichever is less, 20 cycles. Condition A or B, as specified. 3b Surge Current 4066 Condition A or B, as specified 3c Thermal Impedance 3101 Diodes 3103 IGBT 3131 Bipolar 3161 Power FETs As specified. 4 Constant Acceleration 2006 Y1 @ 10,000g or as specified 5 PIND 2052 Test Condition A 6-7 Not Applicable 8 Serialization - - 9 Electrical Tests - As specified; Read And Record. 10 High Temperature Reverse Bias (HTRB) 1038A Diodes and Rectifiers 1039 Transistors 1042 Power FETs Test Condition A TA = 125C; t = 48 hrs min; VR = 80% of rated VR 11 Electrical Tests - As specified; Read And Record. 12 Burn-In 1038 Diodes and Zeners 1039 Transistors 1042 Power FETs Test Condition B Test Condition B Test Condition A o - TA = 25C; t = 240 hrs min; Adjust TA and Io to maintain the junction temperature at +125C minimum - As specified; Read And Record. 13 Electrical Tests 13a PDA 13b Other Electrical - As specified; Group A, subgroup 3 14 Hermetic Seal 1071 Fine Leak Gross Leak 15 Radiography 2076 - 16 External Visual 2071 After complete marking, prior to lot acceptance. 5% Max Note: For potted assemblies such as bridge rectifiers, screening is performed on discrete hermetic components prior to assembly and potting. Completed assemblies are subjected to temperature cycling followed by final electrical parameter verification. © 2015 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com [email protected] SENSITRON _ SEMICONDUCTOR SS-100 SCREENING FLOW DATASHEET 323, REV H SS-100 SCREENING FLOW AXIAL AND MELF ZENER DIODES All parts procured with JAN-S Screening shall be 100% screened in accordance with the following procedure. SCREEN NUMBER TEST/PROCESS MIL-STD-750 TEST METHOD TEST CONDITION 1a Die Visual 2073 - 1b Internal Visual 2074 - 3a Temperature Cycling (Thermal Shock) 1051 No dwell time is required at +25 C. Test condition C, or maximum storage temperature, whichever is less, 20 cycles. 3b Surge Current 4066 Condition B as specified o If specified on Slash Sheet 3c Thermal Impedance 3101 As specified on Slash Sheet 7 Hermetic Seal 1071 - 8 Serialization - - 9 Electrical Tests - As specified; Read and Record. 10 High Temperature Reverse Bias (HTRB) 1038A Test Condition A 11 Electrical Tests and delta parameters for PDA - As specified; Read and Record. 12 Burn-In 1038B Test Condition B o TA = 150 C ; t = 48 hrs; V = 80% of VZ NOM o TA = +75 C MAX. ; t = 240 hrs. ; IZ (MIN) ≥ as specified ; TJ MIN = as specified; adjust IZ and/or TA to achieve the required TJ MIN 13a Electrical Tests and delta parameters for PDA - As specified; Read and Record ; Group A, subgroup 2 13b Other Electrical - As specified; Group A, subgroup 3 15 Radiography 2076 - 16 External Visual 2071 After complete marking, prior to lot acceptance. © 2015 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com [email protected] SENSITRON _ SEMICONDUCTOR SS-100 SCREENING FLOW DATASHEET 323, REV H SS-100 SCREENING FLOW HYBRIDS Reference: MIL-PRF-38534, Class K MIL-STD-883 METHOD 2023 2017 1010 2001 2020 - 8 SCREEN Non-destructive Pull Test Internal Visual Temperature Cycling Constant Acceleration PIND Serialization Pre burn in Electrical Parameters Burn-in 9 Final Electrical Parameters - 10 PDA Calculation - 11 Seal: 1014 12 13 Radiography External Visual, Mechanical 2012 2009 1 2 3 4 5 6 7 CONDITIONS 100% Condition A Condition C Condition A (min) Y1 orientation only. Condition A Per device detailed specification. Read and record. 1015 equally into 2 successive burn-ins. Per device detailed specification. Subgroups 1, 2, 3 minimum Read and record 2% or 1 device, calculated on failures from second burn-in only. Fine Leak Gross leak As specified As specified SS-100 SCREENING FLOW MICROCIRCUITS Reference: MIL-PRF-38535, Class S and MIL-STD-883, Test Method 5004 Class S SCREEN MIL-STD-883 METHOD CONDITIONS 2023 2010 1010 2001 2009 2020 - 100% Condition A Condition C Condition E (min) Y1 orientation only. Condition A Per device detailed specification. Read and record only when delta required. 10 Non-destructive bond pull Internal Visual Temperature Cycling Constant Acceleration Visual Inspection PIND Serialization Pre burn in Electrical Parameters Burn-in Interim (post burn in) Electrical Parameters PDA Calculation 11 Final Electrical Parameters - 12 Seal: a. Fine b. Gross Radiographic External Visual, Mechanical 1014 Per device detailed specification. Read and record. 5% or 1 device whichever is greater (Group A subgroup 1 + deltas) plus 3% or 1 device whichever is greater. (Functional parameters at 25C) Per device detailed specification Read and record. - 2012 2009 Two views - 1 2 3 4 4.1 5 6 7 8 9 13 14 1015 - © 2015 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com [email protected] SENSITRON _ SEMICONDUCTOR SS-100 SCREENING FLOW DATASHEET 323, REV H DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. © 2015 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com [email protected]