Class S equivalent (SS-100)

SENSITRON
_
SEMICONDUCTOR
SS-100 SCREENING FLOW
DATASHEET 323, REV H
SS-100 SCREENING FLOW
DISCRETE SEMICONDUCTORS
(Not applicable for Axial & MELF Diodes)
All parts procured with JAN-S Screening shall be 100% screened in accordance with the following procedure.
SCREEN
TEST / PROCESS
NUMBER
Die Visual
1a
TEST CONDITIONS
MIL-STD-750 TEST METHOD
2073
Condition B
2074
2069 Power FETs
2072 Transistors
As specified
1b
Internal Visual
2
Not Applicable
3a
Temperature Cycling
(Thermal Shock)
1051
No dwell time is required at +25 C.
Test condition C, or maximum storage
temperature, whichever is less, 20
cycles. Condition A or B, as specified.
3b
Surge Current
4066
Condition A or B, as specified
3c
Thermal Impedance
3101 Diodes
3103 IGBT
3131 Bipolar
3161 Power FETs
As specified.
4
Constant Acceleration
2006
Y1 @ 10,000g or as specified
5
PIND
2052
Test Condition A
6-7
Not Applicable
8
Serialization
-
-
9
Electrical Tests
-
As specified; Read And Record.
10
High Temperature Reverse
Bias
(HTRB)
1038A Diodes and Rectifiers
1039 Transistors
1042 Power FETs
Test Condition A
TA = 125C; t = 48 hrs min; VR = 80% of
rated VR
11
Electrical Tests
-
As specified; Read And Record.
12
Burn-In
1038 Diodes and Zeners
1039 Transistors
1042 Power FETs
Test Condition B
Test Condition B
Test Condition A
o
-
TA = 25C; t = 240 hrs min; Adjust TA
and Io to maintain the junction
temperature at +125C minimum
-
As specified; Read And Record.
13
Electrical Tests
13a
PDA
13b
Other Electrical
-
As specified; Group A, subgroup 3
14
Hermetic Seal
1071
Fine Leak
Gross Leak
15
Radiography
2076
-
16
External Visual
2071
After complete marking, prior to lot
acceptance.
5% Max
Note: For potted assemblies such as bridge rectifiers, screening is performed on discrete hermetic components prior to assembly
and potting. Completed assemblies are subjected to temperature cycling followed by final electrical parameter verification.
© 2015 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
Phone (631) 586 7600  Fax (631) 242 9798  www.sensitron.com  sales@sensitron.com
SENSITRON
_
SEMICONDUCTOR
SS-100 SCREENING FLOW
DATASHEET 323, REV H
SS-100 SCREENING FLOW
AXIAL AND MELF ZENER DIODES
All parts procured with JAN-S Screening shall be 100% screened in accordance with the following procedure.
SCREEN
NUMBER
TEST/PROCESS
MIL-STD-750
TEST METHOD
TEST CONDITION
1a
Die Visual
2073
-
1b
Internal Visual
2074
-
3a
Temperature Cycling
(Thermal Shock)
1051
No dwell time is required at +25 C. Test condition C, or
maximum storage temperature, whichever is less, 20
cycles.
3b
Surge Current
4066
Condition B as specified
o
If specified on Slash Sheet
3c
Thermal Impedance
3101
As specified on Slash Sheet
7
Hermetic Seal
1071
-
8
Serialization
-
-
9
Electrical Tests
-
As specified; Read and Record.
10
High Temperature Reverse
Bias (HTRB)
1038A
Test Condition A
11
Electrical Tests and delta
parameters for PDA
-
As specified; Read and Record.
12
Burn-In
1038B
Test Condition B
o
TA = 150 C ; t = 48 hrs; V = 80% of VZ NOM
o
TA = +75 C MAX. ; t = 240 hrs. ; IZ (MIN) ≥ as specified ;
TJ MIN = as specified; adjust IZ and/or TA to achieve the
required TJ MIN
13a
Electrical Tests and delta
parameters for PDA
-
As specified; Read and Record ; Group A, subgroup 2
13b
Other Electrical
-
As specified; Group A, subgroup 3
15
Radiography
2076
-
16
External Visual
2071
After complete marking, prior to lot acceptance.
© 2015 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
Phone (631) 586 7600  Fax (631) 242 9798  www.sensitron.com  sales@sensitron.com
SENSITRON
_
SEMICONDUCTOR
SS-100 SCREENING FLOW
DATASHEET 323, REV H
SS-100 SCREENING FLOW
HYBRIDS
Reference: MIL-PRF-38534, Class K
MIL-STD-883 METHOD
2023
2017
1010
2001
2020
-
8
SCREEN
Non-destructive Pull Test
Internal Visual
Temperature Cycling
Constant Acceleration
PIND
Serialization
Pre burn in Electrical
Parameters
Burn-in
9
Final Electrical Parameters
-
10
PDA Calculation
-
11
Seal:
1014
12
13
Radiography
External Visual, Mechanical
2012
2009
1
2
3
4
5
6
7
CONDITIONS
100%
Condition A
Condition C
Condition A (min) Y1 orientation only.
Condition A
Per device detailed specification.
Read and record.
1015
equally into 2 successive burn-ins.
Per device detailed specification.
Subgroups 1, 2, 3 minimum
Read and record
2% or 1 device, calculated on failures from
second burn-in only.
Fine Leak
Gross leak
As specified
As specified
SS-100 SCREENING FLOW
MICROCIRCUITS
Reference: MIL-PRF-38535, Class S and MIL-STD-883, Test Method 5004 Class S
SCREEN
MIL-STD-883 METHOD
CONDITIONS
2023
2010
1010
2001
2009
2020
-
100%
Condition A
Condition C
Condition E (min) Y1 orientation only.
Condition A
Per device detailed specification.
Read and record only when delta required.
10
Non-destructive bond pull
Internal Visual
Temperature Cycling
Constant Acceleration
Visual Inspection
PIND
Serialization
Pre burn in Electrical
Parameters
Burn-in
Interim (post burn in) Electrical
Parameters
PDA Calculation
11
Final Electrical Parameters
-
12
Seal:
a. Fine
b. Gross
Radiographic
External Visual, Mechanical
1014
Per device detailed specification.
Read and record.
5% or 1 device whichever is greater
(Group A subgroup 1 + deltas) plus
3% or 1 device whichever is greater.
(Functional parameters at 25C)
Per device detailed specification
Read and record.
-
2012
2009
Two views
-
1
2
3
4
4.1
5
6
7
8
9
13
14
1015
-
© 2015 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
Phone (631) 586 7600  Fax (631) 242 9798  www.sensitron.com  sales@sensitron.com
SENSITRON
_
SEMICONDUCTOR
SS-100 SCREENING FLOW
DATASHEET 323, REV H
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the
latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic
equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature
assured safety or by means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the
datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting
from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
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third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws
and regulations.
© 2015 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
Phone (631) 586 7600  Fax (631) 242 9798  www.sensitron.com  sales@sensitron.com