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INCH-POUND
MIL-M-38510/148B
23 March 2004
SUPERSEDING
MIL-M-38510/148A
5 September 1989
MILITARY SPECIFICATION
MICROCIRCUITS, LINEAR, ADJUSTABLE, PRECISION VOLTAGE REFERENCE,
SHUNT REGULATOR, MONOLITHIC SILICON
Reactivated after 23 March 2004 and may be used for either new or existing design acquisitions.
This specification is approved for use by all Departments and Agencies of the Department of Defense.
The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF-38535.
1. SCOPE
1.1 Scope. This specification covers the detail requirements for monolithic silicon, precision voltage reference.
Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the
complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF38535, (see 6.3)
1.2 Part or identifying number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein.
1.2.1 Device types. The device types are internally compensated and are as follows:
Device type
01
02
Circuit
Adjustable voltage reference, shunt regulator
2.5 V voltage reference, shunt regulator
1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535.
1.2.3 Case outline. The case outlines are as designated in MIL-STD-1835 and as follows:
Outline letter
P
X
Descriptive designator
Terminals
GDIP1-T8 or CDIP2-T8
See figure 1
8
3
Package style
Dual-in-line
Can
Comments, suggestions, or questions on this document should be addressed to: Commander, Defense
Supply Center Columbus, ATTN: DSCC-VAS, 3990 East Broad St., Columbus, OH 43216-5000, or emailed
to [email protected] Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at www.dodssp.daps.mil.
AMSC N/A
FSC 5962
MIL-M-38510/148B
1.3 Absolute maximum ratings.
Cathode to anode voltage (device type 01) ......................................
Continuous cathode current range (device type 01) .........................
Reference input current (device type 01) .........................................
Maximum power dissipation (PD) ambient (device type 01) .............
Reverse current (device type 02) .....................................................
Forward current (device type 02) .....................................................
Storage temperature range ..............................................................
Junction operating temperature (TJ) ................................................
Lead temperature (soldering, 10 seconds) .......................................
37 V dc
-100 to +150 mA
-0.05 to 10 mA
1,050 mW 1/
20 mA
10 mA
-65°C to +150°C
+150°C
+300°C
1.4 Recommended operating conditions.
Cathode to anode voltage (device type 01) ......................................
Cathode current (device type 01) .....................................................
Reverse current (device type 02) .....................................................
Forward current (device type 02) .....................................................
Ambient operating temperature range (TA) ......................................
1.5
36 V
100 mA
18 mA
8 mA
-55°C to +125°C
Power and thermal characteristics.
Package
Case outlines
Maximum
θJC
θJA
8 pin DIP
4 pin can
P
X
38°C/W
80°C/W
100°C/W
440°C/W
Maximum
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications and standards form a part of this
specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those
cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38535
- Integrated Circuits (Microcircuits) Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
MIL-STD-1835
- Test Method Standard for Microelectronics.
- Interface Standard Electronic Component Case Outlines.
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
______
1/ Derate 8.4 mW/°C above TA = +25°C.
2
MIL-M-38510/148B
2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited
herein the text of this document shall take precedence. Nothing in this document, however, supersedes applicable
laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.3 and 6.4).
3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as
specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the
QM plan shall not affect the form, fit, or function as described herein.
3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as
specified in MIL-PRF-38535 and herein.
3.3.1 Functional diagrams and terminal connections. The functional diagram and terminal connections shall be as
specified on figure 2.
3.3.2 Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to
the qualifying activity and the preparing activity upon request.
3.3.3 Case outlines. The case outlines shall be as specified in 1.2.3.
3.3.4 Package and sealing material. Packaging and sealing material shall be in accordance with MIL-PRF-38510.
3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6).
3.5 Electrical performance characteristics. The electrical performance characteristics are as specified in table I,
and apply over the full recommended operating ambient temperature range, unless otherwise specified.
3.6 Electrical test requirements. The electrical test requirements for each device class shall be the subgroups
specified in table II. The electrical tests for each subgroup are described in table III.
3.7 Marking. Marking shall be in accordance with MIL-PRF-38535.
3.7.1 Serialization. All class S devices shall be serialized in accordance with MIL-PRF-38510.
3.7.2 Correctness of indexing and markings. All devices shall be subjected to the final electrical tests specified in
table II after part marking to verify that they are correctly indexed and identified by part number. Optionally, an
approved electrical test may be devised especially for this requirement.
3.8 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group
number 59 (see MIL-PRF-38535, appendix A).
3
MIL-M-38510/148B
TABLE I. Electrical performance characteristics for device type 01. 1/
Characteristic
Reference input
Symbol
VREF
Conditions
R1 = 10 kΩ, IK = 10 mA
see 3.5
unless otherwise specified
VKA = VREF, see figure 3,
Device
type
Limits
Unit
Min
Max
2.42
2.57
2.44
2.55
01
8.00
12.00
V
01
31.00
36.00
V
01
-2.70
mV/V
01
-2.00
mV/V
-0.1
4.00
µA
-0.1
7.00
01
2.40
2.60
V
-0.1
1.00
µA
01
V
TA = -55°C, +125°C
VKA = VREF, see figure 3,
TA = +25°C
Cathode voltage
VKA10
VKA10 = VKA, R2 = 3.33 kΩ,
see figure 4
Cathode voltage
VKA36
VKA36 = VKA, R2 = 746 Ω,
see figure 4
Ratio of change in VREF to
change in VKA
∆VR /
VREF = VR2 – VR1,
∆VK(1)
VKA = VKA10 – VR1,
R2 = 3.33 kΩ, see figure 4
Ratio of change in VREF to
change in VKA
∆VR /
VREF = VR3 – VR1,
∆VK(2)
VKA = VKA36 – VR1,
R2 = 746 Ω, see figure 4
Reference input current
IREF
IR = IREF, see figure 4, TA = +25°C
01
IR = IREF, see figure 4,
TA = -55°C, +125°C
VKA = VREF, IK = 1 mA, R2 = ∞,
Minimum cathode current
for regulation
IMIN
Off state cathode
IOFF
VKA = 36 V, VREF = 0 V, see figure 5
01
Input impedance
ZKA
VKA = VREF, IK = 1.0 mA to 100 mA,
01
0.50
Ω
01
20.0
µVp-p
see figure 3
see figure 3
Noise
NO
IK = 10 mA, BW = 0.1 Hz to 10 Hz,
see figure 6, TA = +25°C
See footnote at end of table.
4
MIL-M-38510/148B
TABLE I. Electrical performance characteristics for device type 02. 1/
Test
Minimum operating
Symbol
IMIN
current
Voltage reference
VZ
Conditions
-55°C ≤ TA ≤ +125°C
VREF = 15 V,
unless otherwise specified
VZ = 2.48 V, TA = +25°C
Device
type
Limits
Min
02
Unit
Max
260
VZ = 2.465 V, TA = +125°C
340
VZ = 2.465 V, TA = -55°C
200
2.495
2.505
IR = 400 µA, TA = -55°C, +125°C
2.480
2.520
IR = 1 mA, TA = +25°C
2.495
2.505
IR = 1 mA, TA = -55°C, +125°C
2.480
2.520
IR = 10 mA, TA = +25°C
2.490
2.510
IR = 10 mA, TA = -55°C, +125°C
2.480
2.520
-10.0
10.0
mV
2.500
V
IR = 400 µA, TA = +25°C
02
µA
Load regulation
VZload
IR = 400 µA, 10 mA
02
Voltage adjust reference
VADJ
ADJ = 600 mV
02
V
2.500
ADJ = VREF – 600 mV
Reference adjustment
VZADJ
Impedance
VZ / IZ
400 µA < IZ < 10 mA
02
1.0
Ohms
Delta voltage / delta
VZ / dT
IR = 1 mA, from –55°C to +25°C
02
15
mV
temperature
Noise
1/
02
IR = 1 mA, BW = 0.1 Hz to 10 Hz
mV
15
IR = 1 mA, from +25°C to +125°C
NO
100.0
02
30
µVp-p
For devices marked with the “Q” certification mark, the parameters listed herein may be guaranteed if not tested to the
limits specified herein in accordance with the manufacturer’s QM plan.
5
MIL-M-38510/148B
TABLE II. Electrical test requirements.
Subgroups (see table III)
Class S
Class B 2/
devices
devices
MIL-PRF-38535
test requirements
Interim electrical parameters
Final electrical test parameters
1
1*, 2, 3
1*, 2, 3
Group A test requirements
1, 2, 3, 4, 5, 6
1, 2, 3, 4, 5, 6
Group B electrical test parameters when
using the method 5005 QCI option
Group C end-point electrical
parameters
Group D end-point electrical
parameters
1, 2, 3, and
table IV delta limits
1, 2, 3, and
table IV delta limits
1, 2, 3
1/
1/
1
N/A
1 and table IV
delta limits
1
* PDA applies to subgroup 1 (see 4.2).
4. VERIFICATION.
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or
as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not
effect the form, fit, or function as function as described herein.
4.2 Screening. Screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior
to qualification and quality conformance inspection. The following additional criteria shall apply:
a.
The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified
in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be
maintained under document control by the device manufacturer's Technology Review Board (TRB) in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon
request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in
accordance with the intent specified in test method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table II, except interim electrical
parameters test prior to burn-in is optional at the discretion of the manufacturer.
c.
Additional screening for space level product shall be as specified in MIL-PRF-38535.
6
MIL-M-38510/148B
4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535.
4.4 Technology Conformance inspection (TCI). Technology conformance inspection shall be in accordance with
MIL-PRF-38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4).
4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as
follows:
a.
Tests shall be as specified in table II herein.
b.
Subgroups 7, 8, 9, 10, and 11 shall be omitted.
4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535.
4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as
follows:
a.
End point electrical parameters shall be as specified in table II herein.
b.
The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as
specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit
shall be maintained under document control by the device manufacturer's Technology Review Board (TRB)
in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon
request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in
accordance with the intent specified in test method 1005 of MIL-STD-883.
4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End point
electrical parameters shall be as specified in table II herein.
4.5 Methods of inspection. Methods of inspection shall be specified and as follows.
4.5.1 Voltage and current. All voltage values are referenced to the external zero reference level of the supply
voltage. Currents given are conventional and positive when flowing into the referenced terminal.
4.5.2 Life test and burn-in cooldown procedure. When devices are measured at +25°C following application of the
steady state life or burn-in test condition, they shall be cooled within 10°C of their power stable condition prior to
removal of the bias.
4.6 Data reporting. When specified in the acquisition document, a copy of the following data, as applicable, shall
be applied:
a.
Attributes data for all screening tests (see 4.2) and variables data for all static burn-in, dynamic burn-in,
and operating life tests.
b.
A copy of each radiograph.
c.
The quality conformance inspection data (see 4.4).
d.
Parameter distribution data on parameters evaluated during burn-in (see 3.5).
e.
Final electrical parameter data (see 4.2).
7
MIL-M-38510/148B
Symbol
A
φb
φb1
φD
φD1
e
e1
F
k
k1
k2
L
L1
L2
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.085
.105
2.159
2.667
.016
.019
0.406
0.483
Notes
3
3
.209
.178
.100
.050
--.036
.028
.219
.195
T.P.
T.P.
.030
.046
.048
5.31
4.521
2.540
1.270
--.914
.711
5.563
4.953
T.P.
T.P.
0.762
1.168
1.219
4
.500
--.250
45°
--.050
--T.P.
12.700
--6.35
45°
--1.27
--T.P.
5
5
5
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. (Three leads) φb applies between L1 and L2, φb1 applies between L2 and .500 (12.70 mm) from the
reference plane. Diameter is uncontrolled in L1 and beyond .500 (12.70 mm) from the reference plane.
4. Three leads.
5. Measured from the maximum diameter of the product.
6. Leads having a maximum diameter .019 (0.48 mm) measured in gauging plane
.054 (1.37 mm) + .001 (0.03 mm) - .000 (0.00 mm) below the base plane of the product shall be
within .007 (0.18 mm) of their true position relative to a maximum width tab.
7. The product may be measured by direct methods or by gauge.
FIGURE 1. Case outline X (device type 02).
8
MIL-M-38510/148B
FIGURE 2. Functional diagram and terminal connections.
9
MIL-M-38510/148B
FIGURE 3. Test circuit for ( VKA = VREF ).
_______________________
FIGURE 4. Test circuit for ( VKA > VREF ).
_______________________
10
MIL-M-38510/148B
FIGURE 5. Test circuit.
11
MIL-M-38510/148B
NOTES:
1. Test time = 10 nano seconds.
2. VOUT measured with differential amplifier 7A22 and lower frequency set to 0.1 Hz.
FIGURE 6. Low frequency noise test circuit for device type 01.
12
MIL-M-38510/148B
NOTES:
1. Test time = 10 seconds.
2. VOUT measured with differential amplifier 7A22 and lower frequency set to 0.1 Hz.
3. Device noise = VOUT / 100.
FIGURE 6. Low frequency noise test circuit for device type 02 – Continued.
13
VR2
VR3
IR1
R2 = 3.33 kΩ
R2 = 746 Ω
R2 = ∞
VKA = VREF
IKMIN = 1 mA
4
5
6
7
8
9
∆VR /∆VK
IREF
IMIN
IOFF
ZKA
14
VKA = 36 V, VREF = 0 V
VKA = VREF
IKMIN = 1 mA
15
16
17
18
IREF
IMIN
IOFF
ZKA
IK2
VKA = VREF
IKMIN = 1 mA
25
26
27
IMIN
IOFF
ZKA
VKA = VREF, IK = 100 mA
VKA = 36 V, VREF = 0 V
IR3
R2 = ∞
24
IREF
VR15
IK3
VR14
VR13
R2 = 746 Ω
23
∆VR /∆VK
VR12
VR11
VKA10
VKA36
VR10
VKA = VREF
R2 = 3.33 kΩ
R2 = 746 Ω
R2 = 3.33 kΩ
VKA = VREF, IK = 100 mA
19
20
21
22
VREF1
VKA10
VKA36
IR2
R2 = ∞
14
VKA = 36 V, VREF = 0 V
VR8
R2 = 746 Ω
13
∆VR /∆VK
VR9
VR7
R2 = 3.33 kΩ
10
11
12
VR6
VKA10
VKA36
VR5
IK1
VR4
VREF1
VKA10
VKA36
VKA = VREF
R2 = 3.33 kΩ
R2 = 746 Ω
VKA = VREF, IK = 100 mA
See footnotes at end of table.
TA =
-55°C
3
TA =
+125°C
2
TA =
+25°C
VKA = VREF
R2 = 3.33 kΩ
R2 = 746 Ω
VR1
VKA10
VKA36
1
2
3
Measured
value
VREF1
VKA10
VKA36
unless otherwise specified
Conditions
R1 = 10 kΩ, IK = 10 mA
1
Test
no.
Symbol
Subgroup
4
3
3
3
3
3
4
3
3
3
3
3
4
3
3
3
3
3
See
figure
ZKA = ( VR15 – VR14 ) / 99 mA 3/
IK = Cathode current
IR = IREF
∆VREF = VR13 – VR12
∆VKA = VKA36 – VKA10
∆VREF = VR12 – VR11
∆VKA = VKA10 – VR11
VR = VREF
VKA10 = VKA 2/
VKA36 = VKA 2/
ZKA = ( VR10 – VR6 ) / 99 mA 3/
IK = Cathode current
IR = IREF
∆VREF = VR8 – VR7
∆VKA = VKA36 – VKA10
∆VREF = VR7 – VR6
∆VKA = VKA10 – VR6
VR = VREF
VKA10 = VKA 2/
VKA36 = VKA 2/
ZKA = ( VR5 – VR4 ) / 99 mA 3/
IK = Cathode current
IR = IREF
∆VREF = VR3 – VR2
∆VKA = VKA36 – VKA10
∆VREF = VR2 – VR1
∆VKA = VKA10 – VR1
VR = VREF
VKA10 = VKA 2/
VKA36 = VKA 2/
Notes
TABLE III. Group A inspection for all device type 01. 1/
-0.1
2.40
-0.1
2.42
8.00
31.00
-0.1
2.40
-0.1
2.42
8.00
31.00
-0.1
2.40
-0.1
2.44
8.00
31.00
Min
Limits
µA
Ω
1.00
V dc
µA
mV / V
mV / V
V dc
V dc
V dc
Ω
µA
V dc
µA
mV / V
mV / V
0.50
2.60
7.00
-2.00
-2.70
2.57
12.00
36.00
0.50
1.00
2.60
7.00
-2.00
-2.70
V dc
V dc
V dc
Ω
2.57
12.00
36.00
µA
1.00
V dc
µA
mV / V
mV / V
V dc
V dc
V dc
0.50
2.60
4.00
-2.00
-2.70
2.55
12.00
36.00
Max
Unit
MIL-M-38510/148B
4/
If not tested, shall be guaranteed to the limits specified in table III herein.
ZKA = ∆VKA / ∆IK, f < 1 kHz.
-3.00
∆VREF = VR11 – VR6
∆IREF = VR2 – VR3
3/
3
-44.00
VKA = VREF ( 1+ (R1 / R2 )) + IREF x R2 (see figure 3).
R2 = ∞
∆VREF /∆T
-44.00
-44.00
Min
Limits
∆VREF = VR1 – VR11
∆VREF = VR1 – VR6
4/
Notes
2/
CALC
VKA = VREF
32
∆VREF /∆T
5
See
figure
For devices marked with the “Q” certification mark, the parameters listed herein may be guaranteed if not tested to the
limits specified herein in accordance with the manufacturer’s QM plan.
CALC
VKA = VREF
31
CALC
CALC
NO
Measured
value
30
VKA = VREF
IK = 10 mA,
BW = 0.1 Hz to 10 Hz
unless otherwise specified
Conditions
R1 = 10 kΩ, IK = 10 mA
∆VREF /∆T
29
28
NO
∆VREF /∆T
Test
no.
Symbol
1/
TA = -55°C
TA = +125°C
6
TA = +25°C
5
4
Subgroup
TABLE III. Group A inspection for all device type 01 – Continued. 1/
3.00
44.00
44.00
44.00
20.00
Max
µA
mV
mV
mV
µVp-p
Unit
MIL-M-38510/148B
15
V10
14
16
V15
V16
V17
23
24
4
1/
VZ / dT
VZ / dT
NO
33
32
V21
N1
30
31
400 µA
10 mA
1 mA
1 mA
10 mA
400 µA
1 mA
400 µA
10 mA
200 µA
1 mA
1 mA
10 mA
1.9 V
600 mV
1.9 V
2
2
2
2
2
2
2
2
2
1
2
2
2
2
2
2
VZ / dT = | V16 – V2 |
VZ / dT = | V9 – V2 |
See figure 6
VZ / IZ = ( V21 – V20 ) / 9.6 mA
VZADJ = V19 – V18
VADJ = V19
VADJ = V18
VZLOAD = V15 – V17
VZ = V17
VZ = V16
VZ = V15
VZ / IZ = ( V14 – V13 ) / 9.6 mA
VZADJ = V12 – V11
VADJ = V12
VADJ = V11
VZLOAD = V10 – V8
VZ = V10
VZ = V9
VZ = V8
VZ / IZ = ( V6 – V7 ) / 9.6 mA
VZADJ = V5 – V4
VADJ = V5
VADJ = V4
VZLOAD = V1 – V3
VZ = V3
VZ = V2
VZ = V1
Equations
100.0
2.500
15
15
30
mV
mV
µVp-p
Ω
mV
V
1.0
mV
10.0
V
V
2.500
2.520
2.480
-10.0
2.520
2.520
Ω
mV
V
1.0
mV
10.0
2.480
2.480
2.465
100.0
2.500
V
V
2.500
2.520
-10.0
2.520
2.480
2.520
Ω
mV
V
1.0
mV
10.0
V
V
Unit
2.500
2.480
2.480
2.465
100.0
2.500
-10.0
2.505
2.510
2.505
Max
2.495
Limits
2.490
2.495
2.48
Min
.
Use test circuit for device type 02 shown on figure 5. For devices marked with the “Q” certification mark, the parameters listed herein may be guaranteed if not
tested to the limits specified herein in accordance with the manufacturer’s QM plan.
TA = -55°C
TA = +125°C
6
TA = +25°C
5
V20
29
VZ / IZ
27
28
V19
26
VADJ
VZADJ
V18
25
VZLOAD
VZ
22
IMIN
20
21
3
V14
I3
19
TA = -55°C
V13
18
17
VADJ
VZ / IZ
V12
16
VZLOAD
VZADJ
V11
15
600 mV
V9
13
VZ
TA = +125°C
2
400 µA
1 mA
V8
12
IMIN
2
2
1
V7
I2
10
11
10 mA
340 µA
2
2
0.4 mA
V6
2
9
1.9 V
2
8
1 mA
600 mV
2
2
VZ / IZ
V5
7
1 mA
10 mA
1
Pin
measurement
2
Adjustment
260 µA
Z
400 µA
1 mA
Reference
VZADJ
V4
6
VADJ
V3
4
5
V2
3
VZLOAD
I1
V1
VZ
1
IMIN
1
TA = +25°C
2
Measured
value
Test
no.
Symbol
Subgroup
TABLE III. Group A inspection for all device type 02. 1/
MIL-M-38510/148B
MIL-M-38510/148B
TABLE IV. Group C end point electrical parameters. TA = 25°C
Device
type
01
02
1/
Symbol
Delta 1/
VREF
Min
-0.015
Max
0.015
IREF
-1.0
1.0
VZ for
IR = 1 mA
End point
limits
Min
Max
2.44
2.55
Unit
-0.1
3.0
µA
2.495
2.505
V
V
Delta limits apply to the measured value (see delta limit definition in MIL-PRF-38535).
5. PACKAGING
5.1 Packaging requirements. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the
responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the
Inventory Control Point's packaging activity within the Military Department of Defense Agency, or within the Military Department's
System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's
automated packaging files, CD-ROM products, or by contacting the responsible packaging activity.
17
MIL-M-38510/148B
6. NOTES
6.1 Intended use. Microcircuits conforming to this specification are intended for original equipment design applications and
logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a.
Title, number, and date of the specification.
b.
PIN and compliance identifier, if applicable (see 1.2).
c.
Requirements for delivery of one copy of the conformance inspection data pertinent to the device
inspection lot to be supplied with each shipment by the device manufacturer, if applicable.
d.
Requirements for certificate of compliance, if applicable.
e.
Requirements for notification of change of product or process to acquiring activity in addition to
notification of the qualifying activity, if applicable.
f.
Requirements for failure analysis (including required test condition of MIL-STD-883, method 5003),
corrective action and reporting of results, if applicable.
g.
Requirements for product assurance options.
h.
Requirements for special carriers, lead lengths, or lead forming, if applicable. These requirements should not
affect the part number. Unless otherwise specified, these requirements will not apply to direct purchase by
or direct shipment to the Government.
i.
Requirements for "JAN" marking.
j.
Packaging requirements (see 5.1).
6.3 Superseding information. The requirements of MIL-M-38510 have been superseded to take advantage of the
available Qualified Manufacturer Listing (QML) system provided by MIL-PRF-38535. Previous references to MIL-M-38510 in
this document have been replaced by appropriate references to MIL-PRF-38535. All technical requirements now consist of this
specification and MIL-PRF-38535. The MIL-M-38510 specification sheet number and PIN have been retained to avoid
adversely impacting existing government logistics systems and contractor's parts lists.
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the
time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-38535 whether or not such products have
actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are
urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that
they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information
pertaining to qualification of products may be obtained from DSCC-VQ, 3990 E. Broad Street, Columbus, Ohio 43123-1199.
18
MIL-M-38510/148B
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535, MIL-STD-1331, and as follows:
Symbol
VREF
Description
Reference input voltage
VKA10
Cathode voltage
VKA36
Cathode voltage
VR / VK (1)
Ratio of change in VREF to change in VKA
VR / VK (2)
IREF
Ratio of change in VREF to change in VKA
Reference input current
IMIN
Minimum cathode current for regulation
IOFF
Off state cathode
ZKA
Input impedance
IMIN
Minimum operating current
VZ
Voltage reference
VZLOAD
Load regulation
VADJ
Voltage adjust reference
VZADJ
Reference adjustment
VZ / IZ
Impedance
VZ / dT
Delta voltage / delta temperature
NO
Noise
6.6 Logistic support. Lead materials and finishes (see 3.3) are interchangeable. Unless otherwise specified, microcircuits
acquired for Government logistic support will be acquired to device class B (see 1.2.2), lead material and finish A (see 3.4).
Longer length leads and lead forming should not affect the part number.
6.7 Substitutability. The cross-reference information below is presented for the convenience of users. Microcircuits covered
by this specification will functionally replace the listed generic-industry type. Generic-industry microcircuit types may not have
equivalent operational performance characteristics across military temperature ranges or reliability factors equivalent to MIL-M38510 device types and may have slight physical variations in relation to case size. The presence of this information should not
be deemed as permitting substitution of generic-industry types for MIL-M-38510 types or as a waiver of any of the provisions of
MIL-PRF-38535.
Military device type
01
02
Generic-industry type
TL431
LT1009
19
MIL-M-38510/148B
6.8 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous
issue, due to the extensiveness of the changes.
Custodians:
Army – CR
Navy - EC
Air Force - 11
NASA - NA
DLA – CC
Preparing activity:
DLA - CC
Project 5962-2033
Review activities:
Army - MI, SM
Navy - AS, CG, MC, SH, TD
Air Force – 03, 19, 99
NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and
responsibilities can change, you should verify the currency of the information above using the ASSIT Online database at
www.dodssp.daps.mil.
20
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