INCH-POUND MIL-M-38510/148B 23 March 2004 SUPERSEDING MIL-M-38510/148A 5 September 1989 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, ADJUSTABLE, PRECISION VOLTAGE REFERENCE, SHUNT REGULATOR, MONOLITHIC SILICON Reactivated after 23 March 2004 and may be used for either new or existing design acquisitions. This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF-38535. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, precision voltage reference. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF38535, (see 6.3) 1.2 Part or identifying number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein. 1.2.1 Device types. The device types are internally compensated and are as follows: Device type 01 02 Circuit Adjustable voltage reference, shunt regulator 2.5 V voltage reference, shunt regulator 1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535. 1.2.3 Case outline. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter P X Descriptive designator Terminals GDIP1-T8 or CDIP2-T8 See figure 1 8 3 Package style Dual-in-line Can Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAS, 3990 East Broad St., Columbus, OH 43216-5000, or emailed to [email protected]. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at www.dodssp.daps.mil. AMSC N/A FSC 5962 MIL-M-38510/148B 1.3 Absolute maximum ratings. Cathode to anode voltage (device type 01) ...................................... Continuous cathode current range (device type 01) ......................... Reference input current (device type 01) ......................................... Maximum power dissipation (PD) ambient (device type 01) ............. Reverse current (device type 02) ..................................................... Forward current (device type 02) ..................................................... Storage temperature range .............................................................. Junction operating temperature (TJ) ................................................ Lead temperature (soldering, 10 seconds) ....................................... 37 V dc -100 to +150 mA -0.05 to 10 mA 1,050 mW 1/ 20 mA 10 mA -65°C to +150°C +150°C +300°C 1.4 Recommended operating conditions. Cathode to anode voltage (device type 01) ...................................... Cathode current (device type 01) ..................................................... Reverse current (device type 02) ..................................................... Forward current (device type 02) ..................................................... Ambient operating temperature range (TA) ...................................... 1.5 36 V 100 mA 18 mA 8 mA -55°C to +125°C Power and thermal characteristics. Package Case outlines Maximum θJC θJA 8 pin DIP 4 pin can P X 38°C/W 80°C/W 100°C/W 440°C/W Maximum 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications and standards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard for Microelectronics. - Interface Standard Electronic Component Case Outlines. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) ______ 1/ Derate 8.4 mW/°C above TA = +25°C. 2 MIL-M-38510/148B 2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein the text of this document shall take precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and 6.4). 3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein. 3.3.1 Functional diagrams and terminal connections. The functional diagram and terminal connections shall be as specified on figure 2. 3.3.2 Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to the qualifying activity and the preparing activity upon request. 3.3.3 Case outlines. The case outlines shall be as specified in 1.2.3. 3.3.4 Package and sealing material. Packaging and sealing material shall be in accordance with MIL-PRF-38510. 3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6). 3.5 Electrical performance characteristics. The electrical performance characteristics are as specified in table I, and apply over the full recommended operating ambient temperature range, unless otherwise specified. 3.6 Electrical test requirements. The electrical test requirements for each device class shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table III. 3.7 Marking. Marking shall be in accordance with MIL-PRF-38535. 3.7.1 Serialization. All class S devices shall be serialized in accordance with MIL-PRF-38510. 3.7.2 Correctness of indexing and markings. All devices shall be subjected to the final electrical tests specified in table II after part marking to verify that they are correctly indexed and identified by part number. Optionally, an approved electrical test may be devised especially for this requirement. 3.8 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 59 (see MIL-PRF-38535, appendix A). 3 MIL-M-38510/148B TABLE I. Electrical performance characteristics for device type 01. 1/ Characteristic Reference input Symbol VREF Conditions R1 = 10 kΩ, IK = 10 mA see 3.5 unless otherwise specified VKA = VREF, see figure 3, Device type Limits Unit Min Max 2.42 2.57 2.44 2.55 01 8.00 12.00 V 01 31.00 36.00 V 01 -2.70 mV/V 01 -2.00 mV/V -0.1 4.00 µA -0.1 7.00 01 2.40 2.60 V -0.1 1.00 µA 01 V TA = -55°C, +125°C VKA = VREF, see figure 3, TA = +25°C Cathode voltage VKA10 VKA10 = VKA, R2 = 3.33 kΩ, see figure 4 Cathode voltage VKA36 VKA36 = VKA, R2 = 746 Ω, see figure 4 Ratio of change in VREF to change in VKA ∆VR / VREF = VR2 – VR1, ∆VK(1) VKA = VKA10 – VR1, R2 = 3.33 kΩ, see figure 4 Ratio of change in VREF to change in VKA ∆VR / VREF = VR3 – VR1, ∆VK(2) VKA = VKA36 – VR1, R2 = 746 Ω, see figure 4 Reference input current IREF IR = IREF, see figure 4, TA = +25°C 01 IR = IREF, see figure 4, TA = -55°C, +125°C VKA = VREF, IK = 1 mA, R2 = ∞, Minimum cathode current for regulation IMIN Off state cathode IOFF VKA = 36 V, VREF = 0 V, see figure 5 01 Input impedance ZKA VKA = VREF, IK = 1.0 mA to 100 mA, 01 0.50 Ω 01 20.0 µVp-p see figure 3 see figure 3 Noise NO IK = 10 mA, BW = 0.1 Hz to 10 Hz, see figure 6, TA = +25°C See footnote at end of table. 4 MIL-M-38510/148B TABLE I. Electrical performance characteristics for device type 02. 1/ Test Minimum operating Symbol IMIN current Voltage reference VZ Conditions -55°C ≤ TA ≤ +125°C VREF = 15 V, unless otherwise specified VZ = 2.48 V, TA = +25°C Device type Limits Min 02 Unit Max 260 VZ = 2.465 V, TA = +125°C 340 VZ = 2.465 V, TA = -55°C 200 2.495 2.505 IR = 400 µA, TA = -55°C, +125°C 2.480 2.520 IR = 1 mA, TA = +25°C 2.495 2.505 IR = 1 mA, TA = -55°C, +125°C 2.480 2.520 IR = 10 mA, TA = +25°C 2.490 2.510 IR = 10 mA, TA = -55°C, +125°C 2.480 2.520 -10.0 10.0 mV 2.500 V IR = 400 µA, TA = +25°C 02 µA Load regulation VZload IR = 400 µA, 10 mA 02 Voltage adjust reference VADJ ADJ = 600 mV 02 V 2.500 ADJ = VREF – 600 mV Reference adjustment VZADJ Impedance VZ / IZ 400 µA < IZ < 10 mA 02 1.0 Ohms Delta voltage / delta VZ / dT IR = 1 mA, from –55°C to +25°C 02 15 mV temperature Noise 1/ 02 IR = 1 mA, BW = 0.1 Hz to 10 Hz mV 15 IR = 1 mA, from +25°C to +125°C NO 100.0 02 30 µVp-p For devices marked with the “Q” certification mark, the parameters listed herein may be guaranteed if not tested to the limits specified herein in accordance with the manufacturer’s QM plan. 5 MIL-M-38510/148B TABLE II. Electrical test requirements. Subgroups (see table III) Class S Class B 2/ devices devices MIL-PRF-38535 test requirements Interim electrical parameters Final electrical test parameters 1 1*, 2, 3 1*, 2, 3 Group A test requirements 1, 2, 3, 4, 5, 6 1, 2, 3, 4, 5, 6 Group B electrical test parameters when using the method 5005 QCI option Group C end-point electrical parameters Group D end-point electrical parameters 1, 2, 3, and table IV delta limits 1, 2, 3, and table IV delta limits 1, 2, 3 1/ 1/ 1 N/A 1 and table IV delta limits 1 * PDA applies to subgroup 1 (see 4.2). 4. VERIFICATION. 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit, or function as function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and quality conformance inspection. The following additional criteria shall apply: a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II, except interim electrical parameters test prior to burn-in is optional at the discretion of the manufacturer. c. Additional screening for space level product shall be as specified in MIL-PRF-38535. 6 MIL-M-38510/148B 4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535. 4.4 Technology Conformance inspection (TCI). Technology conformance inspection shall be in accordance with MIL-PRF-38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows: a. Tests shall be as specified in table II herein. b. Subgroups 7, 8, 9, 10, and 11 shall be omitted. 4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535. 4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows: a. End point electrical parameters shall be as specified in table II herein. b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. 4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End point electrical parameters shall be as specified in table II herein. 4.5 Methods of inspection. Methods of inspection shall be specified and as follows. 4.5.1 Voltage and current. All voltage values are referenced to the external zero reference level of the supply voltage. Currents given are conventional and positive when flowing into the referenced terminal. 4.5.2 Life test and burn-in cooldown procedure. When devices are measured at +25°C following application of the steady state life or burn-in test condition, they shall be cooled within 10°C of their power stable condition prior to removal of the bias. 4.6 Data reporting. When specified in the acquisition document, a copy of the following data, as applicable, shall be applied: a. Attributes data for all screening tests (see 4.2) and variables data for all static burn-in, dynamic burn-in, and operating life tests. b. A copy of each radiograph. c. The quality conformance inspection data (see 4.4). d. Parameter distribution data on parameters evaluated during burn-in (see 3.5). e. Final electrical parameter data (see 4.2). 7 MIL-M-38510/148B Symbol A φb φb1 φD φD1 e e1 F k k1 k2 L L1 L2 α Dimensions Inches Millimeters Min Max Min Max .085 .105 2.159 2.667 .016 .019 0.406 0.483 Notes 3 3 .209 .178 .100 .050 --.036 .028 .219 .195 T.P. T.P. .030 .046 .048 5.31 4.521 2.540 1.270 --.914 .711 5.563 4.953 T.P. T.P. 0.762 1.168 1.219 4 .500 --.250 45° --.050 --T.P. 12.700 --6.35 45° --1.27 --T.P. 5 5 5 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. (Three leads) φb applies between L1 and L2, φb1 applies between L2 and .500 (12.70 mm) from the reference plane. Diameter is uncontrolled in L1 and beyond .500 (12.70 mm) from the reference plane. 4. Three leads. 5. Measured from the maximum diameter of the product. 6. Leads having a maximum diameter .019 (0.48 mm) measured in gauging plane .054 (1.37 mm) + .001 (0.03 mm) - .000 (0.00 mm) below the base plane of the product shall be within .007 (0.18 mm) of their true position relative to a maximum width tab. 7. The product may be measured by direct methods or by gauge. FIGURE 1. Case outline X (device type 02). 8 MIL-M-38510/148B FIGURE 2. Functional diagram and terminal connections. 9 MIL-M-38510/148B FIGURE 3. Test circuit for ( VKA = VREF ). _______________________ FIGURE 4. Test circuit for ( VKA > VREF ). _______________________ 10 MIL-M-38510/148B FIGURE 5. Test circuit. 11 MIL-M-38510/148B NOTES: 1. Test time = 10 nano seconds. 2. VOUT measured with differential amplifier 7A22 and lower frequency set to 0.1 Hz. FIGURE 6. Low frequency noise test circuit for device type 01. 12 MIL-M-38510/148B NOTES: 1. Test time = 10 seconds. 2. VOUT measured with differential amplifier 7A22 and lower frequency set to 0.1 Hz. 3. Device noise = VOUT / 100. FIGURE 6. Low frequency noise test circuit for device type 02 – Continued. 13 VR2 VR3 IR1 R2 = 3.33 kΩ R2 = 746 Ω R2 = ∞ VKA = VREF IKMIN = 1 mA 4 5 6 7 8 9 ∆VR /∆VK IREF IMIN IOFF ZKA 14 VKA = 36 V, VREF = 0 V VKA = VREF IKMIN = 1 mA 15 16 17 18 IREF IMIN IOFF ZKA IK2 VKA = VREF IKMIN = 1 mA 25 26 27 IMIN IOFF ZKA VKA = VREF, IK = 100 mA VKA = 36 V, VREF = 0 V IR3 R2 = ∞ 24 IREF VR15 IK3 VR14 VR13 R2 = 746 Ω 23 ∆VR /∆VK VR12 VR11 VKA10 VKA36 VR10 VKA = VREF R2 = 3.33 kΩ R2 = 746 Ω R2 = 3.33 kΩ VKA = VREF, IK = 100 mA 19 20 21 22 VREF1 VKA10 VKA36 IR2 R2 = ∞ 14 VKA = 36 V, VREF = 0 V VR8 R2 = 746 Ω 13 ∆VR /∆VK VR9 VR7 R2 = 3.33 kΩ 10 11 12 VR6 VKA10 VKA36 VR5 IK1 VR4 VREF1 VKA10 VKA36 VKA = VREF R2 = 3.33 kΩ R2 = 746 Ω VKA = VREF, IK = 100 mA See footnotes at end of table. TA = -55°C 3 TA = +125°C 2 TA = +25°C VKA = VREF R2 = 3.33 kΩ R2 = 746 Ω VR1 VKA10 VKA36 1 2 3 Measured value VREF1 VKA10 VKA36 unless otherwise specified Conditions R1 = 10 kΩ, IK = 10 mA 1 Test no. Symbol Subgroup 4 3 3 3 3 3 4 3 3 3 3 3 4 3 3 3 3 3 See figure ZKA = ( VR15 – VR14 ) / 99 mA 3/ IK = Cathode current IR = IREF ∆VREF = VR13 – VR12 ∆VKA = VKA36 – VKA10 ∆VREF = VR12 – VR11 ∆VKA = VKA10 – VR11 VR = VREF VKA10 = VKA 2/ VKA36 = VKA 2/ ZKA = ( VR10 – VR6 ) / 99 mA 3/ IK = Cathode current IR = IREF ∆VREF = VR8 – VR7 ∆VKA = VKA36 – VKA10 ∆VREF = VR7 – VR6 ∆VKA = VKA10 – VR6 VR = VREF VKA10 = VKA 2/ VKA36 = VKA 2/ ZKA = ( VR5 – VR4 ) / 99 mA 3/ IK = Cathode current IR = IREF ∆VREF = VR3 – VR2 ∆VKA = VKA36 – VKA10 ∆VREF = VR2 – VR1 ∆VKA = VKA10 – VR1 VR = VREF VKA10 = VKA 2/ VKA36 = VKA 2/ Notes TABLE III. Group A inspection for all device type 01. 1/ -0.1 2.40 -0.1 2.42 8.00 31.00 -0.1 2.40 -0.1 2.42 8.00 31.00 -0.1 2.40 -0.1 2.44 8.00 31.00 Min Limits µA Ω 1.00 V dc µA mV / V mV / V V dc V dc V dc Ω µA V dc µA mV / V mV / V 0.50 2.60 7.00 -2.00 -2.70 2.57 12.00 36.00 0.50 1.00 2.60 7.00 -2.00 -2.70 V dc V dc V dc Ω 2.57 12.00 36.00 µA 1.00 V dc µA mV / V mV / V V dc V dc V dc 0.50 2.60 4.00 -2.00 -2.70 2.55 12.00 36.00 Max Unit MIL-M-38510/148B 4/ If not tested, shall be guaranteed to the limits specified in table III herein. ZKA = ∆VKA / ∆IK, f < 1 kHz. -3.00 ∆VREF = VR11 – VR6 ∆IREF = VR2 – VR3 3/ 3 -44.00 VKA = VREF ( 1+ (R1 / R2 )) + IREF x R2 (see figure 3). R2 = ∞ ∆VREF /∆T -44.00 -44.00 Min Limits ∆VREF = VR1 – VR11 ∆VREF = VR1 – VR6 4/ Notes 2/ CALC VKA = VREF 32 ∆VREF /∆T 5 See figure For devices marked with the “Q” certification mark, the parameters listed herein may be guaranteed if not tested to the limits specified herein in accordance with the manufacturer’s QM plan. CALC VKA = VREF 31 CALC CALC NO Measured value 30 VKA = VREF IK = 10 mA, BW = 0.1 Hz to 10 Hz unless otherwise specified Conditions R1 = 10 kΩ, IK = 10 mA ∆VREF /∆T 29 28 NO ∆VREF /∆T Test no. Symbol 1/ TA = -55°C TA = +125°C 6 TA = +25°C 5 4 Subgroup TABLE III. Group A inspection for all device type 01 – Continued. 1/ 3.00 44.00 44.00 44.00 20.00 Max µA mV mV mV µVp-p Unit MIL-M-38510/148B 15 V10 14 16 V15 V16 V17 23 24 4 1/ VZ / dT VZ / dT NO 33 32 V21 N1 30 31 400 µA 10 mA 1 mA 1 mA 10 mA 400 µA 1 mA 400 µA 10 mA 200 µA 1 mA 1 mA 10 mA 1.9 V 600 mV 1.9 V 2 2 2 2 2 2 2 2 2 1 2 2 2 2 2 2 VZ / dT = | V16 – V2 | VZ / dT = | V9 – V2 | See figure 6 VZ / IZ = ( V21 – V20 ) / 9.6 mA VZADJ = V19 – V18 VADJ = V19 VADJ = V18 VZLOAD = V15 – V17 VZ = V17 VZ = V16 VZ = V15 VZ / IZ = ( V14 – V13 ) / 9.6 mA VZADJ = V12 – V11 VADJ = V12 VADJ = V11 VZLOAD = V10 – V8 VZ = V10 VZ = V9 VZ = V8 VZ / IZ = ( V6 – V7 ) / 9.6 mA VZADJ = V5 – V4 VADJ = V5 VADJ = V4 VZLOAD = V1 – V3 VZ = V3 VZ = V2 VZ = V1 Equations 100.0 2.500 15 15 30 mV mV µVp-p Ω mV V 1.0 mV 10.0 V V 2.500 2.520 2.480 -10.0 2.520 2.520 Ω mV V 1.0 mV 10.0 2.480 2.480 2.465 100.0 2.500 V V 2.500 2.520 -10.0 2.520 2.480 2.520 Ω mV V 1.0 mV 10.0 V V Unit 2.500 2.480 2.480 2.465 100.0 2.500 -10.0 2.505 2.510 2.505 Max 2.495 Limits 2.490 2.495 2.48 Min . Use test circuit for device type 02 shown on figure 5. For devices marked with the “Q” certification mark, the parameters listed herein may be guaranteed if not tested to the limits specified herein in accordance with the manufacturer’s QM plan. TA = -55°C TA = +125°C 6 TA = +25°C 5 V20 29 VZ / IZ 27 28 V19 26 VADJ VZADJ V18 25 VZLOAD VZ 22 IMIN 20 21 3 V14 I3 19 TA = -55°C V13 18 17 VADJ VZ / IZ V12 16 VZLOAD VZADJ V11 15 600 mV V9 13 VZ TA = +125°C 2 400 µA 1 mA V8 12 IMIN 2 2 1 V7 I2 10 11 10 mA 340 µA 2 2 0.4 mA V6 2 9 1.9 V 2 8 1 mA 600 mV 2 2 VZ / IZ V5 7 1 mA 10 mA 1 Pin measurement 2 Adjustment 260 µA Z 400 µA 1 mA Reference VZADJ V4 6 VADJ V3 4 5 V2 3 VZLOAD I1 V1 VZ 1 IMIN 1 TA = +25°C 2 Measured value Test no. Symbol Subgroup TABLE III. Group A inspection for all device type 02. 1/ MIL-M-38510/148B MIL-M-38510/148B TABLE IV. Group C end point electrical parameters. TA = 25°C Device type 01 02 1/ Symbol Delta 1/ VREF Min -0.015 Max 0.015 IREF -1.0 1.0 VZ for IR = 1 mA End point limits Min Max 2.44 2.55 Unit -0.1 3.0 µA 2.495 2.505 V V Delta limits apply to the measured value (see delta limit definition in MIL-PRF-38535). 5. PACKAGING 5.1 Packaging requirements. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department of Defense Agency, or within the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 17 MIL-M-38510/148B 6. NOTES 6.1 Intended use. Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of the specification. b. PIN and compliance identifier, if applicable (see 1.2). c. Requirements for delivery of one copy of the conformance inspection data pertinent to the device inspection lot to be supplied with each shipment by the device manufacturer, if applicable. d. Requirements for certificate of compliance, if applicable. e. Requirements for notification of change of product or process to acquiring activity in addition to notification of the qualifying activity, if applicable. f. Requirements for failure analysis (including required test condition of MIL-STD-883, method 5003), corrective action and reporting of results, if applicable. g. Requirements for product assurance options. h. Requirements for special carriers, lead lengths, or lead forming, if applicable. These requirements should not affect the part number. Unless otherwise specified, these requirements will not apply to direct purchase by or direct shipment to the Government. i. Requirements for "JAN" marking. j. Packaging requirements (see 5.1). 6.3 Superseding information. The requirements of MIL-M-38510 have been superseded to take advantage of the available Qualified Manufacturer Listing (QML) system provided by MIL-PRF-38535. Previous references to MIL-M-38510 in this document have been replaced by appropriate references to MIL-PRF-38535. All technical requirements now consist of this specification and MIL-PRF-38535. The MIL-M-38510 specification sheet number and PIN have been retained to avoid adversely impacting existing government logistics systems and contractor's parts lists. 6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-38535 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from DSCC-VQ, 3990 E. Broad Street, Columbus, Ohio 43123-1199. 18 MIL-M-38510/148B 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535, MIL-STD-1331, and as follows: Symbol VREF Description Reference input voltage VKA10 Cathode voltage VKA36 Cathode voltage VR / VK (1) Ratio of change in VREF to change in VKA VR / VK (2) IREF Ratio of change in VREF to change in VKA Reference input current IMIN Minimum cathode current for regulation IOFF Off state cathode ZKA Input impedance IMIN Minimum operating current VZ Voltage reference VZLOAD Load regulation VADJ Voltage adjust reference VZADJ Reference adjustment VZ / IZ Impedance VZ / dT Delta voltage / delta temperature NO Noise 6.6 Logistic support. Lead materials and finishes (see 3.3) are interchangeable. Unless otherwise specified, microcircuits acquired for Government logistic support will be acquired to device class B (see 1.2.2), lead material and finish A (see 3.4). Longer length leads and lead forming should not affect the part number. 6.7 Substitutability. The cross-reference information below is presented for the convenience of users. Microcircuits covered by this specification will functionally replace the listed generic-industry type. Generic-industry microcircuit types may not have equivalent operational performance characteristics across military temperature ranges or reliability factors equivalent to MIL-M38510 device types and may have slight physical variations in relation to case size. The presence of this information should not be deemed as permitting substitution of generic-industry types for MIL-M-38510 types or as a waiver of any of the provisions of MIL-PRF-38535. Military device type 01 02 Generic-industry type TL431 LT1009 19 MIL-M-38510/148B 6.8 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous issue, due to the extensiveness of the changes. Custodians: Army – CR Navy - EC Air Force - 11 NASA - NA DLA – CC Preparing activity: DLA - CC Project 5962-2033 Review activities: Army - MI, SM Navy - AS, CG, MC, SH, TD Air Force – 03, 19, 99 NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIT Online database at www.dodssp.daps.mil. 20