5448

SPM1009
SPM1009A
SENSITRON
SEMICONDUCTOR
DATASHEET 5448, REV -
600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE
BRIDGE MODULE
Features
 Isolated base plate
 Light weight low profile standard package
 Aluminum Nitride substrate
 High temperature engineering plastic shell construction
ELECTRICAL CHARACTERISTICS PER IGBT LEG
PARAMETER
(Tj=250C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
TYP
MAX
UNIT
600
-
-
V
-
-
30
A
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
BVCES
IC = 200 A, VGE = 0V
O
Continuous Collector Current
TC = 25 C
IC
O
TC = 100 C
16
Pulsed Collector Current, 1ms
ICM
-
-
90
A
Gate to Emitter Voltage
VGE
-
-
+/-20
V
Gate-Emitter Leakage Current , VGE = +/-20V
IGES
-
-
+/- 100
nA
Gate Threshold Voltage, IC = 0.43 mA
V GE(TH)
4.1
-
5.7
V
Zero Gate Voltage Collector Current
ICES
-
-
-
-
0.1
mA
1.0
mA
o
VCE = 600 V, VGE=0V Ti=25 C
o
VCE = 480 V, VGE=0V Ti=125 C
Collector to Emitter Saturation Voltage
VCE(SAT)
O
TC = 25 C IC = 16A, VGE = 15V
O
TC = 125 C IC = 16A, VGE = 15V
-
-
2.2
V
-
-
2.6
V
pF
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cies
Coes
Cres
-
1630
108
50
-
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
-
23
35
220
26
-
ns
Turn on Energy Loss
Turn off Energy Loss (Including diode reverse recovery)
Eon
Eoff
-
0.69
0.33
-
mJ
mJ
(Tj = 25 C, IC = 16A, VGE = 15V, VCE = 400 V, RG = 10 )
O
-
-
©2014 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 1
SPM1009
SPM1009A
SENSITRON
SEMICONDUCTOR
DATASHEET 5448, REV -
ULTRAFAST DIODES RATING AND CHARACTERISTICS
PARAMETER
SYMBOL
Diode Peak Inverse Voltage
PIV
MIN
600
TYP
MAX
UNIT
-
V
O
Continuous Forward Current, TC = 25 C
IF
O
20
TC = 100 C
12
Forward Surge Current, tp = 1ms
Diode Forward Voltage,
A
IFSM
90
A
O
IF = 16A TC = 25 C
VF
O
IF = 16A TC = 125 C
O
-
-
1.9
V
-
-
1.8
V
Diode Reverse Recovery Time IF = 16A TC = 25 C
trr
-
180
-
ns
Diode Reverse Recovery Charge
O
(IF=16A, VRR=200V , di/dt=200 A/s TC = 25 C)
Qrr
-
1.6
-
C
Diode Maximum Junction-to-Case Thermal Resistance Per
Leg
RJC
-
-
3.0
IGBT Maximum Junction-to-Case Thermal Resistance Per
Leg
RJC
-
-
1.0
Maximum and Storage Junction Temperature
Tjmax
-55
-
150
Isolation to Base Plate
Viso
-
-
2500
PACKAGE CHARACTERISTICS
Schematic Diagram:
©2014 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 2
o
C/W
o
C
V
SPM1009
SPM1009A
SENSITRON
SEMICONDUCTOR
DATASHEET 5448, REV -
Mechanical Outline (inches):
SPM1009
©2014 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 3
SPM1009
SPM1009A
SENSITRON
SEMICONDUCTOR
DATASHEET 5448, REV -
SPM1009A
Package: EPAK1
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
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©2014 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 4
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