Phototransistors PNZ109L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.) 12.7 min. High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 100 lx) 3-ø0.45±0.05 2.54±0.25 Fast response : tr = 5 µs (typ.) 0 0± 1. 1. 0± 0 3˚ 45± .1 5 .2 Long lifetime, high reliability 3 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector to base voltage VCBO 30 V Emitter to collector voltage VECO 3 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 150 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Emitter 2: Base 2: Collector ø5.75 max. Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle Fall time *2 VCE = 10V, L = 100 lx*1 typ max Unit 0.05 2 µA 3.5 mA VCE = 10V 900 nm θ Measured from the optical axis to the half power point 10 deg. VCC = 10V, ICE(L) = 5mA 5 µs tf Collector saturation voltage min λP tr*2 Rise time *1 ICE(L) Conditions VCE = 10V *2 VCE(sat) RL = 100Ω µs 6 ICE(L) = 1mA, L = 500 lx*1 0.3 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ,,,, ,, 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 Phototransistors PNZ109L PC — Ta ICE(L) — VCE 120 80 40 Ta = 25˚C 500 lx T = 2856K 1000 lx 300 lx 16 200 lx 12 100 lx 8 50 lx 4 20 40 60 80 0 100 Ta (˚C ) 0 4 8 12 ICEO — Ta 10 1 10 –1 10 –1 10 –2 40 Ambient temperature 60 80 10 Ta (˚C ) 10˚ 50 80 80 60 40 0 600 120 40 50˚ 30 60˚ VCC = 10V Ta = 25˚C 900 1000 1100 1200 VCC = 10V Ta = 25˚C 10 4 10 3 10 2 RL = 1kΩ 500Ω 10 10 2 RL = 1kΩ 500Ω 10 100Ω 100Ω 70˚ 80˚ 800 tf — ICE(L) tf (µs) 40˚ 700 Wavelength λ (nm) Ta (˚C ) 10 3 tr (µs) 60 30˚ Rise time 70 40 10 4 Relative sensitivity S (%) 90 VCE = 10V Ta = 25˚C tr — ICE(L) 20˚ 100 80 0 Ambient temperature Directivity characteristics 0˚ 10 4 20 1 – 40 100 10 3 L (lx) Spectral sensitivity characteristics 100 Relative sensitivity Collector photo current 1 10 2 10 Illuminance S (%) ICE(L) (mA) 10 1 VCE (V) VCE = 10V L = 100 lx T = 2856K VCE = 10V 20 10 –2 24 ICE(L) — Ta 10 2 0 20 Collector to emitter voltage 10 2 10 –3 – 20 16 Fall time 0 Ambient temperature ICEO (µA) 10 2 L = 10 lx 0 – 20 Dark current VCE = 10V Ta = 25˚C T = 2856K 10 3 ICE(L) (mA) 160 ICE(L) — L Collector photo current ICE(L) (mA) 20 Collector photo current Collector power dissipation PC (mW) 200 1 1 90˚ 10 –1 10 –2 10 –1 1 Collector photo current 2 10 10 2 ICE(L) (mA) 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA)