Si4686DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 18.2 0.014 at VGS = 4.5 V 15 VDS (V) 30 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET® Technology for Low Switching Losses • TrenchFET® Power MOSFETs • 100 % Rg Tested SO-8 APPLICATIONS S 1 8 D S 2 7 D S 3 6 D G 4 5 D D • High-Side DC/DC Conversion - Notebook - Server G Top View S Ordering Information: Si4686DY-T1-E3 (Lead (Pb)-free) Si4686DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current 14.5 ID 13.8b, c 11b, c IDM Single-Pulse Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 4.3 IS 2.5b, c IAS 10 EAS 5 mJ 5.2 3.3 PD W 3.0b, c 1.9b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 50 TC = 25 °C Maximum Power Dissipation V 18.2 TA = 70 °C Pulsed Drain Current Unit - 55 to 150 °C Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 35 42 Maximum Junction-to-Foot (Drain) Steady State RthJF 20 24 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Document Number: 73422 S09-0228-Rev. B, 09-Feb-09 www.vishay.com 1 Si4686DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C -6 1 3 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V RDS(on) V 31.3 50 µA A VGS = 10 V, ID = 13.8 A 0.0078 0.0095 VGS = 4.5 V, ID = 11.4 A 0.011 0.014 VDS = 15 V, ID = 13.8 A 56 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 1220 VDS = 15 V, VGS = 0 V, f = 1 MHz 230 VDS = 15 V, VGS = 10 V, ID = 13.8 A 17 26 9.2 14 98 VDS = 15 V, VGS = 5 V, ID = 13.8 A 4.1 f = 1 MHz 0.8 1.2 20 30 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tr Rise Time 20 30 20 30 tf 8 15 td(on) 13 20 16 25 23 35 8 15 td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time nC 2.8 td(on) Turn-On Delay Time pF Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage TC = 25 °C IS 4.3 ISM 50 IS = 2.6 A VSD 0.8 1.2 A V Body Diode Reverse Recovery Time trr 25 50 ns Body Diode Reverse Recovery Charge Qrr 15 30 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 2.6 A, dI/dt = 100 A/µs, TJ = 25 °C 12.5 12.5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73422 S09-0228-Rev. B, 09-Feb-09 Si4686DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 50 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 6 4 TC = 125 °C 2 10 25 °C 3V 0 0.0 - 55 °C 0 0.4 0.8 1.2 1.6 0 2.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.014 1500 0.012 1200 3.0 3.5 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) Ciss 0.010 VGS = 10 V 0.008 900 600 Coss 0.006 300 Crss 0.004 0 0 10 20 30 40 50 0 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.8 ID = 13.8 A ID = 13.8 A 1.6 8 VDS = 15 V 6 VDS = 21 V 4 2 VGS = 10 V 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 1.2 VGS = 4.5 V 1.0 0.8 0 0 4 8 12 16 20 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73422 S09-0228-Rev. B, 09-Feb-09 150 www.vishay.com 3 Si4686DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 R DS(on) - Drain-to-Source On-Resistance ( ) IS - Source Current (A) 50 TJ = 150 °C 10 TJ = 25 °C 1 ID = 13.8 A 0.025 0.020 TJ = 125 °C 0.015 TJ = 25 °C 0.010 0.005 0 0.2 0.4 0.6 0.8 1.0 1.2 3 4 5 VSD - Source-to-Drain Voltage (V) 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 2.6 2.4 40 2.0 Power (W) VGS(th) (V) 2.2 ID = 250 µA 1.8 1.6 30 20 1.4 10 1.2 1.0 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 600 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* 10 ID - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC 0.01 0.001 0.1 TA = 25 °C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73422 S09-0228-Rev. B, 09-Feb-09 Si4686DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 6 5 4 12 Power (W) ID - Drain Current (A) 16 8 3 2 4 1 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73422 S09-0228-Rev. B, 09-Feb-09 www.vishay.com 5 Si4686DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73422. www.vishay.com 6 Document Number: 73422 S09-0228-Rev. B, 09-Feb-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000