SUP90N08-4m8P Datasheet

SUP90N08-4m8P
Vishay Siliconix
N-Channel 75 V (D-S) MOSFET
FEATURES
• TrenchFET® Power MOSFET
PRODUCT SUMMARY
VDS (V)
75
RDS(on) ()
ID (A)
Qg (Typ)
d
0.0048 at VGS = 10 V
90
0.006 at VGS = 8 V
90d
105
• 175 °C Junction Temperature
• 100 % UIS Tested
RoHS
COMPLIANT
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Supply
- Half-Bridge
- Secondary Synchronous Rectification
TO-220AB
• Industrial
D
G
G D S
Top View
S
Ordering Information: SUP90N08-4m8P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
75
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
IDM
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
ID
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
V
90d
90d
240
IAS
70
EAS
245
PD
Unit
300b
3.75
A
mJ
W
TJ, Tstg
- 55 to 175
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
40
Junction-to-Case (Drain)
RthJC
0.5
°C/W
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 74281
S11-0606-Rev. D, 04-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90N08-4m8P
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
VDS
VDS = 0 V, ID = 250 µA
75
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VDS = 0 V, VGS = ± 20 V
± 250
VDS = 75 V, VGS = 0 V
1
IDSS
VDS = 75 V, VGS = 0 V, TJ = 125 °C
50
VDS = 75 V, VGS = 0 V, TJ = 150 °C
250
ID(on)
VDS 10 V, VGS = 10 V
VGS = 10 V, ID = 20 A
Drain-Source On-State Resistancea
a
Forward Transconductance
4
RDS(on)
gfs
70
V
nA
µA
A
0.004
0.0048
VGS = 10 V, ID = 20 A, TJ = 125 °C
0.0096
VGS = 8 V, ID = 20 A, TJ = 150 °C
0.0106
VGS = 8 V, ID = 20 A
0.0046
VDS = 15 V, ID = 20 A
58

0.006
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
c
Rise Timec
Turn-Off Delay Time
Fall Timec
VGS = 0 V, VDS = 40 V, f = 1 MHz
td(off)
pF
571
275
105
160
VDS = 30 V, VGS = 10 V, ID = 85 A
32
f = 1 MHz
1.3
2.6
23
35
17
26
34
52
8
15
nC
28
td(on)
tr
c
6460
VDD = 30 V, RL = 0.4 
ID  85 A, VGEN = 10 V, Rg = 1 
tf

ns
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
85
Pulsed Current
ISM
240
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 30 A, VGS = 0 V
0.85
1.5
V
68
100
ns
IF = 75 A, dI/dt = 100 A/µs
2.6
4
A
88
132
nC
trr
IRM(REC)
Qrr
A
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74281
S11-0606-Rev. D, 04-Apr-
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90N08-4m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
120
VGS = 10 thru 6 V
100
I D - Drain Current (A)
I D - Drain Current (A)
100
80
60
40
5V
80
60
40
20
20
0
0
TC = 125 °C
25 °C
- 55 °C
0
1
2
3
4
5
0
2
VDS - Drain-to-Source Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
150
0.015
gfs - Transconductance (S)
120
25 °C
90
125 °C
60
30
R DS(on) - On-Resistance ( )
TC = - 55 °C
0
0.012
0.009
VGS = 8 V
0.006
0.003
VGS = 10 V
0.000
0
10
20
30
40
50
60
0
20
VGS - Gate-to-Source Voltage (V)
40
Transconductance
80
100
On-Resistance vs. Drain Current
8200
0.020
ID = 20 A
Ciss
6560
0.016
C - Capacitance (pF)
R DS(on) - On-Resistance ( )
60
ID - Drain Current (A)
0.012
125 °C
0.008
3280
1640
25 °C
0.004
4920
Coss
0.000
4.0
Crss
0
5.2
6.4
7.6
8.8
10.0
0
15
30
45
60
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
On-resistance vs. Gate-to-Source Voltage
Capacitance
Document Number: 74281
S11-0606-Rev. D, 04-Apr-11
75
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90N08-4m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
10
ID = 20 A
VDS = 30 V
8
1.7
6
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
ID = 85 A
VDS = 60 V
4
10 V
1.4
1.1
0.8
2
0.5
- 50
0
0
23
46
69
92
115
- 25
Gate Charge
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
100
0.7
150 °C
10
0.2
V GS(th) Variance (V)
I S - Source Current (A)
25
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
1.0
25 °C
0.1
0.01
ID = 5 mA
- 0.3
- 0.8
- 1.3
ID = 250 µA
- 1.8
0.001
0.0
0
0.2
0.4
0.6
0.8
1.0
- 2.3
- 50
1.2
VSD - Source-to-Drain Voltage (V)
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
100
100
ID = 1 mA
90
IDAV (A)
V DS (normalized)
95
150 °C
25 °C
10
85
80
75
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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1
0.00001 0.0001
0.001
0.01
0.1
1.0
TAV (sec)
Single Pulse Avalanche Current Capability vs. Time
Document Number: 74281
S11-0606-Rev. D, 04-Apr-
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP90N08-4m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
180
Limited by R DS(on)*
100 µs
100
108
I D - Drain Current (A)
I D - Drain Current (A)
144
Package Limited
72
1 ms
10
10 ms
100 ms
DC
1
36
TC = 25 °C
Single Pulse
0.1
0
0
25
50
75
100
125
150
0.1
TC - Case Temperature (°C)
1
* VGS
Maximum Drain Current vs. Case Temperature
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability
data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/
tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74281.
Document Number: 74281
S11-0606-Rev. D, 04-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000