Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BZV49 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1999 May 11
2005 Feb 03
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV49 series
FEATURES
PINNING
• Total power dissipation: max. 1 W
PIN
DESCRIPTION
• Tolerance series: approx. ±5%
1
anode
• Working voltage range: nom. 2.4 to 75 V (E24 range)
2
cathode
• Non-repetitive peak reverse power dissipation:
max. 40 W.
3
anode
APPLICATIONS
• General regulation functions.
1
3
DESCRIPTION
Medium-power voltage regulator diodes in a SOT89
plastic SMD package.
3
The diodes are available in the normalized E24 approx.
±5% tolerance range. The series consists of 37 types with
nominal working voltages from 2.4 to 75 V (BZV49-C2V4
to BZV49-C75).
2
2
1
sym096
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
BZV49-C2V4 to
BZV49-C75
note 1
NAME
DESCRIPTION
VERSION
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
Note
1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range).
MARKING
TYPE
NUMBER
MARKING
CODE
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZV49-C2V4
2Y4
BZV49-C6V2
6Y2
BZV49-C16
16Y
BZV49-C43
43Y
BZV49-C2V7
2Y7
BZV49-C6V8
6Y8
BZV49-C18
18Y
BZV49-C47
47Y
BZV49-C3V0
3Y0
BZV49-C3Y3
3Y3
BZV49-C7V5
7Y5
BZV49-C20
20Y
BZV49-C51
51Y
BZV49-C8V2
8Y2
BZV49-C22
22Y
BZV49-C56
56Y
BZV49-C3V6
3Y6
BZV49-C9V1
9Y1
BZV49-C24
24Y
BZV49-C62
62Y
BZV49-C3V9
3Y9
BZV49-C10
10Y
BZV49-C27
27Y
BZV49-C68
68Y
BZV49-C4V3
4Y3
BZV49-C11
11Y
BZV49-C30
30Y
BZV49-C75
75Y
BZV49-C4V7
4Y7
BZV49-C12
12Y
BZV49-C33
33Y
−
−
BZV49-C5V1
5Y1
BZV49-C13
13Y
BZV49-C36
36Y
−
−
BZV49-C5V6
5Y6
BZV49-C15
15Y
BZV49-C39
39Y
−
−
2005 Feb 03
TYPE
NUMBER
MARKING
CODE
2
TYPE
NUMBER
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
IF
continuous forward current
IZSM
non-repetitive peak reverse current
tp = 100 μs; square wave;
Tj = 25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb = 25 °C; note 1
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 μs; square wave;
Tj = 25 °C prior to surge; see Fig.2
Tstg
Tj
MAX.
UNIT
250
mA
−
1
W
−
40
W
storage temperature
−65
+150
°C
junction temperature
−
150
°C
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
2005 Feb 03
PARAMETER
forward voltage
CONDITIONS
IF = 50 mA; see Fig.3
3
MAX.
UNIT
1
V
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZtest
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
IR (μA)
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 μs;
Tamb = 25 °C
4
450
50
1.0
6.0
5
450
20
1.0
6.0
0
5
450
10
1.0
6.0
0
5
450
5
1.0
6.0
−2.4
0
5
450
5
1.0
6.0
−3.5
−2.5
0
5
450
3
1.0
6.0
90
−3.5
−2.5
0
5
450
3
1.0
6.0
80
−3.5
−1.4
+0.2
5
300
3
2.0
6.0
40
60
−2.7
−0.8
+1.2
5
300
2
2.0
6.0
6.0
15
40
−2.0
+1.2
+2.5
5
300
1
2.0
6.0
6.6
6
10
0.4
2.3
3.7
5
200
3
4.0
6.0
6.4
7.2
6
15
1.2
3.0
4.5
5
200
2
4.0
6.0
7V5
7.0
7.9
6
15
2.5
4.0
5.3
5
150
1
5.0
4.0
8V2
7.7
8.7
6
15
3.2
4.6
6.2
5
150
0.7
5.0
4.0
9V1
8.5
9.6
6
15
3.8
5.5
7.0
5
150
0.5
6.0
3.0
10
9.4
10.6
8
20
4.5
6.4
8.0
5
90
0.2
7.0
3.0
11
10.4
11.6
10
20
5.4
7.4
9.0
5
85
0.1
8.0
2.5
12
11.4
12.7
10
25
6.0
8.4
10.0
5
85
0.1
8.0
2.5
13
12.4
14.1
10
30
7.0
9.4
11.0
5
80
0.1
8.0
2.5
15
13.8
15.6
10
30
9.2
11.4
13.0
5
75
0.05
10.5
2.0
16
15.3
17.1
10
40
10.4
12.4
14.0
5
75
0.05
11.2
1.5
18
16.8
19.1
10
45
12.4
14.4
16.0
5
70
0.05
12.6
1.5
20
18.8
21.2
15
55
14.4
16.4
18.0
5
60
0.05
14.0
1.5
22
20.8
23.3
20
55
16.4
18.4
20.0
5
60
0.05
15.4
1.25
24
22.8
25.6
25
70
18.4
20.4
22.0
5
55
0.05
16.8
1.25
TYP.
MAX.
MIN.
TYP. MAX.
MAX.
2V4
2.2
2.6
70
100
−3.5
−1.6
0
5
2V7
2.5
2.9
75
100
−3.5
−2.0
0
3V0
2.8
3.2
80
95
−3.5
−2.1
3V3
3.1
3.5
85
95
−3.5
−2.4
3V6
3.4
3.8
85
90
−3.5
3V9
3.7
4.1
85
90
4V3
4.0
4.6
80
4V7
4.4
5.0
50
5V1
4.8
5.4
5V6
5.2
6V2
5.8
6V8
MAX.
Product data sheet
VR
(V)
MAX.
BZV49 series
MAX.
MIN.
NXP Semiconductors
BZV49CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
Voltage regulator diodes
2005 Feb 03
Per type
Tj = 25 °C unless otherwise specified.
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
IR (μA)
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 μs;
Tamb = 25 °C
5
MAX.
MAX.
VR
(V)
2
50
0.05
18.9
1.0
29.4
2
50
0.05
21.0
1.0
33.4
2
45
0.05
23.1
0.9
33.0
37.4
2
45
0.05
25.2
0.8
33.4
36.4
41.2
2
45
0.05
27.3
0.7
37.6
41.2
46.6
2
40
0.05
30.1
0.6
170
42.0
46.1
51.8
2
40
0.05
32.9
0.5
60
180
46.6
51.0
57.2
2
40
0.05
35.7
0.4
70
200
52.2
57.0
63.8
2
40
0.05
39.2
0.3
66.0
80
215
58.8
64.4
71.6
2
35
0.05
43.4
0.3
64.0
72.0
90
240
65.6
71.7
79.8
2
35
0.05
47.6
0.25
70.0
79.0
95
255
73.4
80.2
88.6
2
35
0.05
52.5
0.2
MIN.
MAX.
TYP.
MAX.
MIN.
TYP. MAX.
27
25.1
28.9
25
80
21.4
23.4
25.3
30
28.0
32.0
30
80
24.4
26.6
33
31.0
35.0
35
80
27.4
29.7
36
34.0
38.0
35
90
30.4
39
37.0
41.0
40
130
43
40.0
46.0
45
150
47
44.0
50.0
50
51
48.0
54.0
56
52.0
60.0
62
58.0
68
75
MAX.
NXP Semiconductors
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZtest
Voltage regulator diodes
2005 Feb 03
BZV49CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
Product data sheet
BZV49 series
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV49 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-tp)
thermal resistance from junction to tie-point
Rth(j-a)
thermal resistance from junction to ambient
note 1
VALUE
UNIT
15
K/W
125
K/W
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
GRAPHICAL DATA
MBG781
MBG801
103
handbook, halfpage
300
handbook, halfpage
PZSM
(W)
IF
(mA)
102
200
(1)
10
100
(2)
1
10−1
1
duration (ms)
0
0.6
10
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.2
Fig.3
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
2005 Feb 03
6
0.8
VF (V)
1
Forward current as a function of forward
voltage; typical values.
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV49 series
MBG927
1
handbook, full pagewidth
4V3
SZ
(mV/K)
3V9
3V6
0
3V3
−1
3V0
−2
2V7
2V4
−3
10-3
10-2
10-1
IZ (A)
BZV49-C2V4 to C4V3.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of working current; typical values.
MBG924
10
handbook, halfpage
SZ
(mV/K)
10
9V1
5
8V2
7V5
6V8
6V2
5V6
5V1
0
4V7
−5
0
4
8
12
16
IZ (mA)
20
BZV49-C4V7 to C10.
Tj = 25 to 150 °C.
Fig.5
Temperature coefficient as a function of
working current; typical values.
2005 Feb 03
7
1
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV49 series
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2005 Feb 03
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
8
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV49 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2005 Feb 03
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R76/04/pp10
Date of release: 2005 Feb 03
Document order number:
9397 750 13926
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