S6200, S6210, S6220 SERIES SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit (1) Peak repetitive forward and reverse blocking voltage S6200A, S6210A, S6220A S6200B, S6210B, S6220B S6200D, S6210D, S6220D S6200M, S6210M, S6220M VRRM, VDRM Peak non-repetitive forward and non-repetitive reverse blocking voltage(1) S6200A, S6210A, S6220A S6200B, S6210B, S6220B S6200D, S6210D, S6220D S6200M, S6210M, S6220M VDSM, VRSM Forward on-state current RMS (TC = 75°C) IT(RMS) Peak non-repetitive surge current (one cycle, 60Hz, preceded and followed by rated current, TC = 75°C) ITSM Circuit fusing considerations (TJ = -65 to +100°C, t = 8.3ms) I2t Peak gate power (10µs max.) PGM Average gate power 100 200 400 600 Volts 150 250 500 700 Volts 20 Amps Amps 200 A2s 170 40 Watts PG(AV) 0.5 Watts Operating junction temperature range TJ -65 to +100 °C Storage temperature range Tstg -65 to +150 °C 30 In. lb. Mounting torque Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case S6200 SERIES S6210 SERIES, S6220 SERIES Symbol Maximum Unit RӨJC 1.2 1.4 °C/W Rev. 20150306 S6200, S6210, S6220 SERIES SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Instantaneous forward breakover voltage (gate open, TC = 100°C) S6200A, S6210A, S6220A S6200B, S6210B, S6220B S6200D, S6210D, S6220D S6200M, S6210M, S6220M Peak blocking current (Rated VDRM @ TC = 100°C) TC = 25°C Symbol V(BO)O IRRM IDRM Peak on-state voltage (IT = 100A peak) VT Gate trigger current (continuous dc) (Main terminal voltage = 12V, RL = 30Ω) IGT Gate trigger voltage (continuous dc) (Main terminal voltage = 12V, RL = 30Ω) VGT Holding current (either direction) (Main terminal voltage = 12V, gate open) IH Gate controlled turn-on time (VD = V(BO)O, IT = 30A peak, IGT = 200mA, rise time = 0.1µs) tgt Critical rate of rise of off-state voltage (VD = V(BO)O, exponential rise, gate open, TC = 100°C) S6200A,D, S6210A,D, S6220A,D S6200B, S6210B, S6220B S6200D, S6210D, S6220D Min. Typ. Max. 100 200 400 600 - - - - 10 2 - - 2.4 - - 15 - - 2 - - 20 - 2 - Unit Volts µA mA Volts mA Volts mA µs V/µs dv/dt 10 10 10 100 150 75 - Rev. 20150306 High-reliability discrete products and engineering services since 1977 S6200, S6210, S6220 SERIES SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case Digi PF1 (S6200 SERIES) Marking Body painted, alpha-numeric DIGI PF1 A F G H J K L Q Inches Min Max 0.501 0.505 0.160 0.085 0.095 0.060 0.070 0.300 0.350 1.050 0.670 0.055 0.085 Millimeters Min Max 12.730 12.830 4.060 2.160 2.410 1.520 1.780 7.620 8.890 26.670 17.020 1.400 2.160 Rev. 20150306 High-reliability discrete products and engineering services since 1977 S6200, S6210, S6220 SERIES SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case TO-48 (S6210 SERIES) Marking Body painted, alpha-numeric Polarity Cathode is stud Rev. 20150306 S6200, S6210, S6220 SERIES SILICON CONTROLLED RECTIFIER High-reliability discrete products and engineering services since 1977 MECHANICAL CHARACTERISTICS Case TO-48 ISO (S6220 SERIES) Marking Body painted, alpha-numeric Polarity Cathode is stud TO-48 ISO A B C F H J K L Q T Inches Min Max 0.551 0.559 0.501 0.505 1.280 0.160 0.265 0.420 0.455 0.300 0.350 0.255 0.275 0.055 0.085 0.135 0.150 Millimeters Min Max 14.000 14.200 12.730 12.830 32.510 4.060 6.730 10.670 11.560 7.620 8.890 6.480 6.990 1.400 2.160 3.430 3.810 Rev. 20150306