956

SHD125446
SHD125446P
SHD125446N
SHD125446D
SENSITRON
__
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 956, REV. D
HERMETIC POWER SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Applications:
 Switching Power Supply  Converters  Free-Wheeling Diodes  Polarity Protection Diode
Features:







Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Reverse Leakage Current
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Add a “C” after the SHD for ceramic seals (SHDC125446)
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Common Cathode / Anode
Max. Average Forward Current
Single / Doubler
Max. Peak One Cycle Surge
Current Non-Repetitive per leg
Non-Repetitive Avalanche
Energy per leg
Repetitive Avalanche Current
per leg
Thermal Resistance (per leg)
Max. Junction Temperature
Max. Storage Temperature
Symbol
VRWM
IF(AV)
IF(AV)
IFSM
EAS
IAR
RJC
TJ
Tstg
Condition
50% duty cycle, rectangular
wave form
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
(per leg)
TJ = 25 C, IAS = 0.75 A,
L = 40mH
IAS decay linearly to 0 in 1 s
 limited by TJ max VA=1.5VR
-
Max.
200
30
Units
V
A
15
A
200
A
16
mJ
0.75
A
1.5
-65 to +200
-65 to +175
C/W
C
C
Max.
1.09
0.93
0.7
Units
V
V
mA
16
mA
600
pF
50
nsec
Note: The current rating is 15A per diode with 100% duty cycle.
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current (per leg)
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
(per leg)
CT
Max. Reverse Recovery Time
trr
Condition
@ 30A, Pulse, TJ = 25 C
@ 30A, Pulse, TJ = 125 C
@VR = 200V, Pulse,
TJ = 25 C
@VR = 200V, Pulse,
TJ = 125 C
@VR = 5V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
IF = 0.5 A, IR = 1.0 A,
IRM = 0.25 A, TJ = 25 C
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681 
 Phone (631) 586-7600  Fax (631) 242-9798  www.sensitron.com  [email protected] 
SHD125446
SHD125446P
SHD125446N
SHD125446D
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 956, REV. D
Mechanical Dimensions: In Inches / mm
.149 (3.78
Dia.
.139 3.53)
.545 (13.84
.535 13.60)
1
.045 (1.14
.035 0.89)
3 Places
(6.60
6.32)
(1.27
1.02)
.800 (20.32
.790 20.07) .545 (13.84
.535 13.58)
.685 (17.40
.665 16.89)
1.235 (31.37
1.195 30.35)
.260
.249
.050
.040
SINGLE
2
1
COMMON CATHODE
2
3
COMMON ANODE
1
2
3
DOUBLER
3
1
.150(3.81) BSC
2 Places
2
3
1
2
3
.150(3.81) BSC
PINOUT TABLE
TYPE
SINGLE RECTIFIER
DUAL RECTIFIER, COMMON CATHODE (P)
DUAL RECTIFIER, COMMON ANODE (N)
DUAL RECTIFIER, DOUBLER (D)
Curves shown are for bare die only.
TO-254
PIN 1
CATHODE
ANODE 1
CATHODE 1
ANODE
PIN 2
ANODE
COMMON CATHODE
COMMON ANODE
CATHODE/ ANODE
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681 
 Phone (631) 586-7600  Fax (631) 242-9798  www.sensitron.com  [email protected] 
PIN 3
ANODE
ANODE 2
CATHODE 2
CATHODE
SHD125446
SHD125446P
SHD125446N
SHD125446D
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 956, REV. D
Typical Rev erse Characteristics
Typical Forw ard Characteristics
200 °C
175 °C
10 0
10 1
Instantaneous Reverse Current - I
R
(mA)
10 1
200 °C
Instantaneous Forward Current - I
F
(A)
175 °C
10 0
150 °C
10 -1
125 °C
100 °C
10 -2
75 °C
10 -3
50 °C
10
-4
25 °C
10 -5
125 °C
0
40
80
120
160
Reverse Voltage - V R (V)
200
240
Typical Junction Capacitance
10 -1
600
10 -2
0.0
0.2
0.4
0.6
Forward Voltage Drop - V
0.8
F (V)
1.0
Junction Capacitance - C
T
(pF)
25 °C
450
300
150
0
0
40
80
120
160
Reverse Voltage - V R (V)
200
240
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
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a value exceeding the absolute maximum rating.
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©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681 
 Phone (631) 586-7600  Fax (631) 242-9798  www.sensitron.com  [email protected]
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