SHD125446 SHD125446P SHD125446N SHD125446D SENSITRON __ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 956, REV. D HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Reverse Leakage Current Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Add a “C” after the SHD for ceramic seals (SHDC125446) Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Common Cathode / Anode Max. Average Forward Current Single / Doubler Max. Peak One Cycle Surge Current Non-Repetitive per leg Non-Repetitive Avalanche Energy per leg Repetitive Avalanche Current per leg Thermal Resistance (per leg) Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IF(AV) IFSM EAS IAR RJC TJ Tstg Condition 50% duty cycle, rectangular wave form 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave (per leg) TJ = 25 C, IAS = 0.75 A, L = 40mH IAS decay linearly to 0 in 1 s limited by TJ max VA=1.5VR - Max. 200 30 Units V A 15 A 200 A 16 mJ 0.75 A 1.5 -65 to +200 -65 to +175 C/W C C Max. 1.09 0.93 0.7 Units V V mA 16 mA 600 pF 50 nsec Note: The current rating is 15A per diode with 100% duty cycle. Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) Max. Reverse Current (per leg) Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) CT Max. Reverse Recovery Time trr Condition @ 30A, Pulse, TJ = 25 C @ 30A, Pulse, TJ = 125 C @VR = 200V, Pulse, TJ = 25 C @VR = 200V, Pulse, TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) IF = 0.5 A, IR = 1.0 A, IRM = 0.25 A, TJ = 25 C ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798 www.sensitron.com [email protected] SHD125446 SHD125446P SHD125446N SHD125446D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 956, REV. D Mechanical Dimensions: In Inches / mm .149 (3.78 Dia. .139 3.53) .545 (13.84 .535 13.60) 1 .045 (1.14 .035 0.89) 3 Places (6.60 6.32) (1.27 1.02) .800 (20.32 .790 20.07) .545 (13.84 .535 13.58) .685 (17.40 .665 16.89) 1.235 (31.37 1.195 30.35) .260 .249 .050 .040 SINGLE 2 1 COMMON CATHODE 2 3 COMMON ANODE 1 2 3 DOUBLER 3 1 .150(3.81) BSC 2 Places 2 3 1 2 3 .150(3.81) BSC PINOUT TABLE TYPE SINGLE RECTIFIER DUAL RECTIFIER, COMMON CATHODE (P) DUAL RECTIFIER, COMMON ANODE (N) DUAL RECTIFIER, DOUBLER (D) Curves shown are for bare die only. TO-254 PIN 1 CATHODE ANODE 1 CATHODE 1 ANODE PIN 2 ANODE COMMON CATHODE COMMON ANODE CATHODE/ ANODE ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798 www.sensitron.com [email protected] PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE SHD125446 SHD125446P SHD125446N SHD125446D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 956, REV. D Typical Rev erse Characteristics Typical Forw ard Characteristics 200 °C 175 °C 10 0 10 1 Instantaneous Reverse Current - I R (mA) 10 1 200 °C Instantaneous Forward Current - I F (A) 175 °C 10 0 150 °C 10 -1 125 °C 100 °C 10 -2 75 °C 10 -3 50 °C 10 -4 25 °C 10 -5 125 °C 0 40 80 120 160 Reverse Voltage - V R (V) 200 240 Typical Junction Capacitance 10 -1 600 10 -2 0.0 0.2 0.4 0.6 Forward Voltage Drop - V 0.8 F (V) 1.0 Junction Capacitance - C T (pF) 25 °C 450 300 150 0 0 40 80 120 160 Reverse Voltage - V R (V) 200 240 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798 www.sensitron.com [email protected]