UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs 1 SOT-89 Lead-free: 2SC3647L Halogen-free: 2SC3647G ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free 2SC3647L-x-AB3-R 2SC3647G-x-AB3-R Package SOT-89 www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 B C E Packing Tape Reel 1 of 5 QW-R208-039,C 2SC3647 NPN SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25°C) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 6 V Collector Current IC 2 A Collector Current (Pulse) ICP 3 A Collector Dissipation PC 500 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance DC Current Gain Turn-ON Time Storage Time Fall Time Gain-Bandwidth Product ■ SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(SAT) Cob hFE tON tSTG tF fT TEST CONDITIONS IC = 10μA, IE =0 IC = 1mA, RBE =∞ IE = 10μA, IC=0 VCB = 100V, IE =0 VEB = 4V, IC =0 IC = 1A, IB = 100mA IC = 1A, IB = 100mA VCB = 10V, f =1MHz VCE = 5V, IC = 100mA See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VCE = 10V, IC = 100mA CLASSIFICATION OF hFE RANK RANGE R 100 ~ 200 UNISONIC TECHNOLOGIES CO., LTD 5 MIN TYP MAX UNIT 120 V 100 V 6 V 100 nA 100 nA 0.13 0.4 V 0.85 1.2 V 16 pF 100 400 80 ns 1000 ns 50 ns 120 MHz www.unisonic.com.tw S 140 ~ 280 T 200 ~ 400 2 of 5 QW-R208-039,C 2SC3647 NPN SILICON TRANSISTOR SWITCHING TIME TEST CIRCUIT PW=20µS DC≤1% IB1 RB INPUT 50Ω RL IB2 VR + 100µF -5V + 470µF 50V 10IB1= -10IB2=IC=0.7A UNISONIC TECHNOLOGIES CO., LTD 5 www.unisonic.com.tw 3 of 5 QW-R208-039,C 2SC3647 ■ NPN SILICON TRANSISTOR TYPICAL CHARACTERICS IC - VBE 2.4 1000 VCE = 5V 7 2.0 hFE - IC VCE = 5V 5 1.6 3 2 1.2 100 0.8 7 0.4 0.2 0.8 0.4 0.6 1.0 Base to Emitter Voltage, VBE (V) 3 1.2 UNISONIC TECHNOLOGIES CO., LTD 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC (A) 2 3 Collector to Emitter Saturation Voltage, VCE (sat) (mV) 0 Output Capacitance, cob (pF) 0 5 www.unisonic.com.tw 4 of 5 QW-R208-039,C 2SC3647 ■ NPN SILICON TRANSISTOR TYPICAL CHARACTERICS(Cont.) VBE (sat) - IC 10 IC/IB = 10 7 5 3 2 1.0 Ta = -25°C 7 5 25°C 3 7 0.01 75°C 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC (A) ASO 10 DC 0m 1m 10 s m s s Op er at ion 0.1 7 5 3 2 One Pulse - Ta = 25°C 0.01 Mounted on ceramic board 7 (250mm × 0.8mm) 5 2 3 5 7 100 5 7 1.0 2 3 5 7 10 Collector to Emitter Voltage, VCE (V) 2 PC - Ta 1.8 Collector Dissipation, Pc (W) 2 3 5 I CP 3 I C 2 1.0 7 5 3 2 1.6 1.4 1.2 1.0 0.8 0.6 Infin ite h eat s ink 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta (°C) UNISONIC TECHNOLOGIES CO., LTD 5 www.unisonic.com.tw 5 of 5 QW-R208-039,C