SHD126044 SHD126044P SHD126044N SHD126044D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 371, REV. B SCHOTTKY RECTIFIER Very Low Forward Voltage Drop 150 C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Out Performs 100 Volt Ultrafast Rectifiers Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Symbol VRWM IF(AV) Condition 50% duty cycle, rectangular wave form -Common Cathode (P) / Anode (N) -Doubler (D) Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current IFSM 8.3 ms, half Sine wave EAS TJ = 25 C, IAS = 0.23 A, L = 130 mH IAS decay linearly to 0 in 1 s limited by TJ max VA=1.5VR Maximum Thermal Resistance (Junction to Mounting Surface) R Max. Junction Temperature Max. Storage Temperature TJ Tstg IAR JC (per diode) - Max. 100 Units V A 6.0 3.0 55 A 3.5 mJ 0.23 A 11.9 C/W -65 to +150 -65 to +175 C C Max. 0.94 0.78 0.07 Units V V mA 1.6 mA 100 pF Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) Max. Reverse Current (per leg) Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) CT Condition @ 3A, Pulse, TJ = 25 C @ 3A, Pulse, TJ = 125 C @VR = 100V, Pulse, TJ = 25 C @VR = 100V, Pulse, TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD126044 SHD126044P SHD126044N SHD126044D TECHNICAL DATA DATA SHEET 371, REV. B Mechanical Dimensions: In Inches / mm .150 (3.81 Dia. .140 3.56) 1.132 (28.75 1.032 26.21) 2 .045 (1.14 .035 0.89) 1 2 3 1 2 COMMON ANODE .665 (16.89 .645 16.38) 1 COMMON CATHODE .200 (5.08 .190 4.82) .420 (10.67 .410 10.41) .537 (13.64 .527 13.39) SINGLE 3 DOUBLER .430 (10.92 .410 10.41) 3 1 .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places 3 3 2 1 TO-257 .120(3.05) BSC PINOUT TABLE TYPE SINGLE RECTIFIER DUAL RECTIFIER, COMMON CATHODE (P) DUAL RECTIFIER, COMMON ANODE (N) DUAL RECTIFIER, DOUBLER (D) 2 PIN 1 CATHODE ANODE 1 CATHODE 1 ANODE Typical Forward Characteristics PIN 2 ANODE COMMON CATHODE COMMON ANODE ANODE/CATHODE PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE Typical Reverse Characteristics Instantaneous Reverse Current - I R (mA) 101 200 °C 175 °C 125 °C 10-1 175 °C 150 °C 10-1 125 °C 10-2 100 °C 75 °C 10-3 50 °C 10-4 25 °C 10-5 0 10-2 -3 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop -FV(V) 20 40 60 80 100 Reverse Voltage - RV (V) 120 Typical Junction Capacitance 25 °C Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 100 200°C 100 0.8 90 80 70 60 50 40 30 20 10 0 20 40 60 80 100 Reverse Voltage - RV (V) 120 Note: The Vf curves shown are for the SD060SC100 unpackaged die only. ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD126044 SHD126044P SHD126044N SHD126044D TECHNICAL DATA DATA SHEET 371, REV. B DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]