Datasheet

AON6560
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
VDS
30V
200A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.68mΩ
RDS(ON) (at VGS=4.5V)
< 1.1mΩ
100% UIS Tested
100% Rg Tested
• High performance ORing, Efuse
• Ultra high current battery charge/discharge
DFN5X6
Top View
D
Top View
Bottom View
PIN1
1
8
2
7
3
6
4
5
G
PIN1
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON6560
DFN 5x6
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current C
Avalanche energy
VDS Spike
L=0.05mH
C
10µs
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: January 2015
IAS
80
A
EAS
160
mJ
36
V
208
7.3
Steady-State
Steady-State
RθJA
RθJC
W
4.7
TJ, TSTG
Symbol
t ≤ 10s
W
83
PDSM
TA=70°C
A
67
PD
TC=100°C
A
84
VSPIKE
TC=25°C
V
800
IDSM
TA=70°C
±20
200
IDM
TA=25°C
Units
V
200
ID
TC=100°C
C
Maximum
30
-55 to 150
Typ
14
40
0.46
www.aosmd.com
°C
Max
17
50
0.6
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
±100
nA
1.8
2.2
V
0.55
0.68
0.8
1
1.1
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
0.85
gFS
Forward Transconductance
VDS=5V, ID=20A
100
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.65
IS
Maximum Body-Diode Continuous CurrentG
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
µA
5
1.4
VGS=10V, ID=20A
Coss
S
1
V
200
A
11500
pF
3400
pF
3100
pF
1.2
Ω
230
325
Qg(4.5V) Total Gate Charge
130
185
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=15V, ID=20A
mΩ
mΩ
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Units
30
VDS=30V, VGS=0V
IDSS
Max
nC
nC
28
nC
Gate Drain Charge
92
nC
Turn-On DelayTime
16
ns
42
ns
115.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
91.5
ns
IF=20A, dI/dt=500A/µs
38.5
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
120
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: January 2015
www.aosmd.com
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
4.5V
VDS=5V
3V
80
80
10V
2.8V
60
125°C
ID(A)
ID (A)
60
40
40
25°C
20
20
VGS=2.5V
0
0
0
1
2
3
4
0
5
1
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
1.4
1.6
Normalized On-Resistance
1.2
VGS=4.5V
1
RDS(ON) (mΩ)
2
0.8
0.6
0.4
VGS=10V
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.2
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
2
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
1.2
IS (A)
RDS(ON) (mΩ)
1.6
125°C
1.0E-02
0.8
25°C
1.0E-03
0.4
1.0E-04
25°C
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: January 2015
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
18000
VDS=15V
ID=20A
16000
14000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
12000
10000
8000
6000
Coss
4000
2
Crss
2000
0
0
0
50
100
150
200
250
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
5000
1000.0
10µs
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
4000
10µs
100µs
1ms
10ms
DC
10.0
Power (W)
ID (Amps)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
10000.0
100.0
10
3000
2000
1.0
0.1
1000
TJ(Max)=150°C
TC=25°C
0.0
0.01
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0
1E-05 0.0001 0.001 0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.6°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: January 2015
www.aosmd.com
Page 4 of 6
250
250
200
200
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
100
50
150
100
50
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
TCASE (°C)
Figure 12: Power De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: January 2015
www.aosmd.com
Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: January 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6