SHD126212 SHD126212P SHD126212N SHD126212D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 898, REV. C HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Soft Reverse Recovery at Low and High Temperature Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Max. Thermal Resistance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IF(AV) IFSM R JC TJ Tstg Condition 50% duty cycle, rectangular wave form (Single/Doubler) 50% duty cycle, rectangular wave form (Common Cathode/Common Anode) 8.3 ms, half Sine wave (per leg) (Single) - Max. 45 15 Units V A 16 A 75 A 2.82 -65 to +150 -65 to +150 C/W C C Max. 0.65 Units V 0.60 V 1.5 mA 70 mA 800 pF Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol VF1 VF2 Max. Reverse Current IR1 IR2 Max. Junction Capacitance CT Condition @ 15A, Pulse, TJ = 25 C (per leg) @ 15A, Pulse, TJ = 125 C (per leg) @VR = 45V, Pulse, TJ = 25 C (per leg) @VR = 45V, Pulse, TJ = 125 C (per leg) @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) (per leg) 2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD126212 SHD126212P SHD126212N SHD126212D TECHNICAL DATA DATA SHEET 898, REV. C Mechanical Dimensions: In Inches / mm .150 (3.81 Dia. .140 3.56) .665 (16.89 .645 16.38) 1.132 (28.75 1.032 26.21) 1 2 COMMON CATHODE .200 (5.08 .190 4.82) .420 (10.67 .410 10.41) .537 (13.64 .527 13.39) SINGLE .045 (1.14 .035 0.89) 1 2 3 1 COMMON ANODE 2 3 DOUBLER .430 (10.92 .410 10.41) 3 1 .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places 2 3 3 2 .120(3.05) BSC TO-257 PINOUT TABLE TYPE PIN 1 PIN 2 SINGLE RECTIFIER CATHODE ANODE DUAL RECTIFIER, COMMON CATHODE (P) ANODE 1 COMMON CATHODE DUAL RECTIFIER, COMMON ANODE (N) CATHODE 1 COMMON ANODE DUAL RECTIFIER, DOUBLER (D) ANODE ANODE/CATHODE Note: The Vf curves shown are for the SD125SA45 un-packaged die only. PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE Typical Reverse Characteristics Instantaneous Reverse Current - I R (mA) Typical Forward Characteristics 101 150 °C 102 150 °C 101 125 °C 100 °C 100 75 °C -1 10 50 °C 10-2 25 °C 125 °C 100 10-3 0 25 °C Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 1 10-1 0.0 0.2 0.4 0.6 Forward Voltage Drop -FV(V) 0.8 10 20 30 40 Reverse Voltage - RV (V) 50 Typical Junction Capacitance 800 700 600 500 400 300 200 0 10 20 30 40 Reverse Voltage - RV (V) 50 2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD126212 SHD126212P SHD126212N SHD126212D TECHNICAL DATA DATA SHEET 898, REV. C DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. 2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]