4780

SHD126213
SHD126213D
SHD126213N
SHD126213P
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4780, REV. B
SILICON SCHOTTKY RECTIFIER
Ultra Low Reverse Leakage
150°C Operating Temperature
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
•
•
•
•
•
•
Ultra low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
Max. Junction Temperature
Max. Storage Temperature
Thermal Resistance
Symbol
VRWM
IF(AV)
IFSM
TJ
Tstg
RθJC
Condition
50% duty cycle, rectangular
wave form (Single/Doubler)
8.3 ms, half Sine wave
-
Max.
Units
60
16
V
A
280
A
-65 to +150
-65 to +150
1.45
°C
°C
°C/W
Max.
0.79
0.74
2
Units
V
V
mA
140
mA
800
pF
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
CT
Condition
@ 16A, Pulse, TJ = 25 °C
@ 16A, Pulse, TJ = 125 °C
@VR = 60V, Pulse,
TJ = 25 °C
@VR = 60V, Pulse,
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected] •
SHD126213
SHD126213D
SHD126213N
SHD126213P
TECHNICAL DATA
DATA SHEET 4780, REV. B
Mechanical Dimensions: In Inches / mm
.150 (3.81
Dia.
.140 3.56)
.665 (16.89
.645 16.38)
.537 (13.64
.527 13.39)
1.132 (28.75
1.032 26.21)
.200 (5.08
.190 4.82)
.420 (10.67
.410 10.41)
1
2
.035 (0.89
.025 0.63)
3 Places
.045 (1.14
.035 0.89)
.430 (10.92
.410 10.41)
3
.100(2.54) BSC
2 Places
.120(3.05) BSC
TO-257
DEVICE TYPE
SINGLE RECTIFIER
COMMON CATHODE (P)
COMMON ANODE (N)
DOUBLER (D)
PIN 1
PIN 2
CATHODE
ANODE 1
CATHODE 1
ANODE
PIN 3
ANODE
COMMON CATHODE
COMMON ANODE
CATHODE / ANODE
Typical Reverse Characteristics
102
Instantaneous Reverse Current - I
R
(mA)
Typical Forward Characteristics
ANODE
ANODE 2
CATHODE 2
CATHODE
125 °C
100
101
125 °C
100 °C
100
75 °C
10-1
50 °C
10-2
25 °C
10-3
0
25 °C
10
20
30
40
Reverse Voltage - V R (V)
50
60
Typical Junction Capacitance
10
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I
F
(A)
101
-1
0.0
0.2
0.4
0.6
Forward Voltage Drop - V F (V)
0.8
800
700
600
500
400
300
200
0
10
20
30
40
50
Reverse Voltage - V R (V)
60
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected] •
SHD126213
SHD126213D
SHD126213N
SHD126213P
TECHNICAL DATA
DATA SHEET 4780, REV. B
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected]
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