BC807

BC807 / BC808
BC807 / BC808
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
PNP
PNP
Version 2015-05-12
Type
Code
1
1.3±0.1
3
2.4 ±0.2
0.4
Power dissipation – Verlustleistung
+0.1
1.1 -0.2
2.9 ±0.1
+0.1
-0.05
2
1.9
±0.1
Dimensions - Maße [mm]
1=B
2=E
3=C
310 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC807
BC808
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
E-B short
- VCES
50 V
30 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCEO
45 V
25 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
5V
Power dissipation – Verlustleistung
Ptot
310 mW 1)
Collector current – Kollektorstrom (dc)
- IC
800 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
1A
IEM
1A
- IBM
200 mA
Tj
TS
-55...+150°C
-55…+150°C
Peak Emitter current – Emitter-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
100
160
250
–
–
–
250
400
630
40
–
–
–
–
0.7 V
–
–
1.3 V
2
DC current gain – Kollektor-Basis-Stromverhältnis )
- VCE = 1 V, - IC = 100 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
- VCE = 1 V, - IC = 500 mA
all groups
hFE
2
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. )
- IC = 500 mA, - IB = 50 mA
- VCEsat
2
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung )
- IC = 500 mA, - IB = 50 mA
1
2
- VBEsat
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC807 / BC808
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
- VBE
–
–
1.2 V
- ICB0
- ICB0
–
–
–
–
100 nA
5 µA
- IEB0
–
–
100 nA
fT
–
100 MHz
–
CCBO
–
12 pF
–
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 1 V, - IC = 500 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 20 V, (E open)
- VCB = 20 V, Tj = 125°C, (E open)
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VEB = 4 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
< 420 K/W 1)
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC817 / BC818
Marking of available current gain groups per type
BC807-16 = 5A or 5CR BC808-16 = 5E or 5CR
Stempelung der lieferbaren Stromverstärkungsgruppen pro BC807-25 = 5B or 5CS BC808-25 = 5F or 5CS
Typ
BC807-40 = 5C or 5CT BC808-40 = 5G or 5CT
120
[%]
100
80
60
40
20
Ptot
0
0
TA
50
100
150
[°C]
1
Power dissipation versus ambient temperature )
1
Verlustleistung in Abh. von d. Umgebungstemp. )
2
1
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
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