MMBT2222A MMBT2222A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2015-05-12 3 Type Code 1 1.3±0.1 2.4 ±0.2 0.4 Power dissipation – Verlustleistung +0.1 1.1 -0.2 2.9 ±0.1 +0.1 -0.05 2 1.9 250 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert ±0.1 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMBT2222A Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 40 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 75 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 6V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. hFE hFE hFE hFE 35 50 75 100 – – – – – – – 300 hFE 40 – – 2 DC current gain – Kollektor-Basis-Stromverhältnis ) IC IC IC IC = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, IC = 500 mA, VCE VCE VCE VCE = = = = 10 10 10 10 V V V V VCE = 10 V 2) MMBT2222A h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA 1 2 Small signal current gain Kleinsignal-Stromverstärkung MMBT2222A hfe 75 – 375 Input impedance – Eingangs-Impedanz MMBT2222A hie 0.25 kΩ – 1.25 kΩ Output admittance – Ausgangs-Leitwert MMBT2222A hoe 25 µS – 200 µS Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 MMBT2222A Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA MMBT2222A VCEsat – – 0.3 V IC = 500 mA, IB = 50 mA MMBT2222A VCEsat – – 1.0 V 2 Base-Emitter saturation voltage – Basis-Sättigungsspannung ) IC = 150 mA, IB = 15 mA MMBT2222A VBEsat 0.65 V – 1.2 V IC = 500 mA, IB = 50 mA MMBT2222A VBEsat – – 2.0 V Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 60 V, (E open) MMBT2222A ICBO – – 10 nA VCB = 60 V, Tj = 125°C, (E open) MMBT2222A ICBO – – 10 µA IEB0 – –- 100 nA fT 250 MHz – – CCBO – – 8 pF CEBO – – 25 pf F – – 4 dB VCC = 3 V, VBE = 0.5 V IC = 150 mA, IB1 = 15mA td – – 10 ns tr – – 25 ns VCC = 3 V, IC = 150 mA, IB1 = IB2 = 15 mA ts – – 225 ns tf – – 60 ns Emitter-Base cutoff current – Emitter-Basis-Reststrom VEB = 3 V, (C open) MMBT2222A Gain-Bandwidth Product – Transitfrequenz VCE = 20 V, IC = 20 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 10 V, IC = 100 µA, RG = 1 kΩ, f = 1 kHz MMBT2222A Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung 2 1 2 RthA < 420 K/W 1) MMBT2709A MMBT2222A = 1P Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG