MMBT5401

MMBT5401
MMBT5401
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
PNP
PNP
Version 2015-05-12
Type
Code
1
1.3±0.1
3
2.4 ±0.2
0.4
Power dissipation – Verlustleistung
+0.1
1.1 -0.2
2.9 ±0.1
+0.1
-0.05
2
1.9
±0.1
Dimensions - Maße [mm]
1=B
2=E
3=C
250 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMBT5401
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCEO
150 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCBO
160 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
5V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
- IC
600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
2
DC current gain – Kollektor-Basis-Stromverhältnis )
- VCE = 5 V, - IC = 1 mA
- VCE = 5 V, - IC = 10 mA
- VCE = 5 V, - IC = 50 mA
MMBT5400
hFE
hFE
hFE
30
40
40
–
–
–
–
180
–
- VCE = 5 V, - IC = 1 mA
- VCE = 5 V, - IC = 10 mA
- VCE = 5 V, - IC = 50 mA
MMBT5401
hFE
hFE
hFE
50
60
50
–
–
–
–
240
–
–
–
–
–
0.2 V
0.5 V
–
–
–
–
1.0 V
1.0 V
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VCEsat
- VCEsat
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
1
2
- VBEsat
- VBEsat
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
MMBT5401
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 120 V, (E open)
MMBT5401
- ICBO
–
–
50 nA
- VCB = 120 V, Tj = 100°C, (E open)
MMBT5401
- ICBO
–
–
50 µA
- IEBO
–
–-
50 nA
fT
100 MHz
–
300 MHz
CCBO
–
–
6 pF
F
–
–
8 dB
Emitter-Base-cutoff current – Emitter-Basis-Reststrom
- VEB = 4 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- IC = 10 mA, - VCE = 10 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA,
RS = 10 Ω, f = 1 kHz
MMBT5401
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
< 420 K/W 1)
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
MMBT5551
Marking - Stempelung
MMBT5401 = 2Lx
120
[%]
100
80
60
40
20
Ptot
0
0
TA
50
100
150
[°C]
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp.1)
1
1
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG