PST1600A ... PST1600M PST1600A ... PST1600M Silicon Rectifier Diodes – Half Bridge Silizium-Gleichrichterdioden– Halbbrücke Version 2013-05-07 2.8±0.3 10.1 Ø 3.8±0.2 4 Type Typ 0.42 ±0.1 16 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 1 2 3 1.3±0.1 0.8 ±0.2 2.54±0.1 TO-220AB Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ 50...1000 V Plastic case Kunststoffgehäuse 3.9±0.3 13.9±0.3 1 2 3 2.67±0.2 4 8.7±0.3 4.5±0.2 14.9±0.7 1.2±0.2 Nominal current Nennstrom ±0.3 Grenz- und Kennwerte Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) Forward voltage Durchlass-Spannung VF [V] 1), Tj = 25°C IF = 5 A IF = 8 A PST1600A 50 50 < 1.0 < 1.1 PST1600B 100 100 < 1.0 < 1.1 PST1600D 200 200 < 1.0 < 1.1 PST1600G 400 400 < 1.0 < 1.1 PST1600J 600 600 < 1.0 < 1.1 PST1600K 800 800 < 1.0 < 1.1 PST1600M 1000 1000 < 1.0 < 1.1 Max. average forward current, R-load Dauergrenzstrom mit R-Last TC = 100°C TC = 100°C IFAV IFAV 8 A 1) 16 A 2) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 3) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 135/150 A 1) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 90 A2s 1) Tj -50...+150°C -50...+175°C Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 3 TS Per diode – Pro Diode Output current when operating two devices in a full bridge configuration Ausgangstrom bei Betrieb zweier Bauteile als Vollbrücke Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 PST1600A ... PST1600M Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C VR = VRRM IR Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse < 5 µA RthC < 2.5 K/W 1) 10 2 120 [%] [A] 100 10 80 Tj = 125°C Tj = 25°C 1 60 40 10-1 20 IF IFAV 0 -2 0 TC 50 100 150 [°C] 0.4 Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur 1 2 200a-(5a-0.95v) 10 VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) Per diode – Pro Diode http://www.diotec.com/ © Diotec Semiconductor AG