PT800A ... PT800M PT800A ... PT800M Silicon Rectifier Diodes – Single Diode Silizium-Gleichrichterdioden – Einzeldiode Version 2013-05-07 0.42±0.1 ±0.3 ±0.2 13.9 2.67 2.8±0.3 4 Type Typ 3 8A Repetitive peak reverse voltage Periodische Spitzensperrspannung ±0.3 Ø 3.8±0.2 4 1 Nominal current Nennstrom 1 1.3±0.1 3 0.8±0.2 TO-220AC Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 5.08 ±0.1 Standard packaging in tubes Standard Lieferform in Stangen Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ 50...1000 V Plastic case Kunststoffgehäuse 8.7 4.5±0.2 10.1±0.3 3.9±0.3 ±0.2 14.9±0.7 1.2 Grenz- und Kennwerte Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 8 A PT800A 50 50 < 1.0 < 1.1 PT800B 100 100 < 1.0 < 1.1 PT800D 200 200 < 1.0 < 1.1 PT800G 400 400 < 1.0 < 1.1 PT800J 600 600 < 1.0 < 1.1 PT800K 800 800 < 1.0 < 1.1 PT800M 1000 1000 < 1.0 < 1.1 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 8A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 135/150 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 90 A2s Tj -50...+150°C -50...+175°C Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 TS Tj = 25°C Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 PT800A ... PT800M Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C VR = VRRM IR Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse < 5 µA RthC < 2.5 K/W 10 2 120 [%] [A] 100 10 80 Tj = 125°C Tj = 25°C 1 60 40 10-1 20 IF IFAV 0 -2 0 TC 50 100 150 [°C] Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur 2 200a-(5a-0.95v) 10 http://www.diotec.com/ 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) © Diotec Semiconductor AG