160-W, Wide Mains, PFC Stage Driven by the NCP1602 Evaluation Board User's Manual

NCP1602GEVB
160‐W, Wide Mains,
PFC Stage Driven by
the NCP1602 Evaluation
Board User's Manual
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EVAL BOARD USER’S MANUAL
Introduction
and high-efficiency are the key requirements. Extremely
slim, the NCP1602 evaluation board is designed to be less
than 13 mm high. This low-profile PFC Stage is intended to
deliver 160 W under a 390-V output voltage from a wide
mains input. This is a PFC boost converter as used in flat
TVs, high power LED street light power supplies, and
all-in-one computer supplies. The evaluation board embeds
the NCP1602 AEA-version which is powered by an external
VCC. With the help of an external dc source, apply a VCC
voltage that exceeds the NCP1602−AEA start-up level
(18.2 V max) to ensure the circuit starts operating. The VCC
operating range is from 9.5 V up to 30 V.
Housed in a TSOP6 package, the NCP1602 is designed to
drive PFC boost stages in so-called Valley Synchronized
Frequency Fold-back (VSFF). In this mode, the circuit
classically operates in Critical conduction Mode (CrM)
when VCTRL pin voltage exceeds a product version
programmable voltage level. When VCTRL pin voltage is
below this programmable level, the NCP1602 linearly
decays the frequency down to about 20 kHz, when the load
current is nearly zero. VSFF maximizes the efficiency
throughout the load range. Incorporating protection features
for rugged operation, it is furthermore ideal in systems
where cost-effectiveness, reliability, low stand-by power
Table 1. ELECTRICAL SPECIFICATIONS
Description
Value
Units
Input Voltage Range
90−265
V rms
Line Frequency Range
45 to 66
Hz
160
W
Minimum Output Load Current(s)
0
A
Number of Outputs
1
Maximum Output Power
Nominal Output Voltage
390
V
Maximum Start-Up Time
<3
s
< 250
mW
95
%
10−100
%
93
%
No-Load Power (115 V rms)
Target Efficiency at Full Load (115 V rms)
Load Conditions for Efficiency Measurements (10%, 20%, …)
Minimum Efficiency at 20% Load, 115 V rms
Minimum PF over the Line Range at Full Load
95
%
Hold-Up Time (the Output Voltage Remaining above 300 V)
> 10
ms
Peak to Peak Low Frequency Output Ripple
<8
%
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 0
1
Publication Order Number:
EVBUM2302/D
NCP1602GEVB
THE BOARD
Figure 1. A Slim Board (Height < 13 mm)
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2
3
Figure 2. Application Schematic − Power Section
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L
N
Earth
C3c
C3b
C3a
S2b
86−265 V rms
F1
S2a
CM1
VLINE
C5a
220 nF
400 V
C1 1 nF Type = Y
C2
1 nF
Type = Y
R1 1 MW
R2 1 MW
IN
C2
22 nF
Type = X2
U1
GBU406
220 nF Type = X2
C5b
220 nF
400 V
VIN
S1b
D4
1N4148
Socket for
External VCC
Power Source
S1a
R6
22 W
D3
1N4148
L2
200 mH
(np/ns = 10)
C7
22 mF
50 V
R5
2.2 W
D2
1N5406
R10
10 kW
DZ2
33 V
R3
80 mW
3W
Q1
IPA50R250
D1
MUR550
C6a
68 mF
450 V
Rth1
B57153S150M
C6b
68 mF
450 V
BULK
Vcc
GND
Vsource
Vbulk
DRV
Vdrain
Vaux
NCP1602GEVB
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4
C8
1 nF
R11
27 kW
Figure 3. Application Schematic − Control Section
C9
2.2 mF
R12
22 kW
C10
220 nF
C11
NC
C13
100 nF
DRV
4
3
CS/ZCD
Top View
VCC
5
2
GND
6
1
FB
VCTRL
R27
0W
R10
1800 kW
R9
1800 kW
R8
680 kW
S3
R31
10 kW
R32
4.7 MW
R33
1 MW
R30
0W
C12
NC
R7
0W
R24
240 kW
R21
39 kW
R23
240 kW
R22
5.1 MW/
500 V
GND
DRV
Vsource
Vdrain
Vcc
Vbulk
Vaux
NCP1602GEVB
NCP1602GEVB
VSFF OPERATION
The NCP1602 operates in so called Valley Synchronized
Frequency Fold-back (VSFF) where the circuit works in
Critical conduction Mode (CrM) when the load current is
medium to high (VCTRL pin voltage medium or high).
The load current is correlated with the VCTRL pin voltage
(see Table 2). VCTRL = 4.5 V corresponds to the maximum
current capability which in our case is not reached because
we limit the application to 160 W and 0.5 V corresponds to
zero load current. When VCTRL pin voltage is lower than
a preset level, the switching frequency linearly decays to
about 20 kHz. VSFF maximizes the efficiency at both
nominal and light loads. In particular, stand-by losses are
minimized. When VCTRL pin voltage (VCTRL) exceeds
VCTRL,DT voltage (VCTRL,DT = 1.553 V for the AEA
option), the circuit operates in CrM (typical CrM waveforms
are depicted in Figure 4). If VCTRL is below VCTRL,DT,
the circuit forces a delay (or dead-time) before re-starting
a DRV cycle which is proportional to the difference between
VCTRL,DT reference and VCTRL voltage. This mode is called
discontinuous conduction mode (DCM) or Frequency
Foldback and the main waveforms are depicted in Figure 5.
This delay is maximum when VCTRL reached is 0.5-V
minimum value. When the 0.5-V VCTRL minimum value is
VDRAIN
reached, the circuit works in a so-called Static OVP mode
(for no SKIP mode options like AEA option used on this
board), by skipping cycles based on the difference voltage
between VCTRL and 0.5-V. This static OVP mode offers
a very low output ripple voltage, unlike the classical SKIP
mode of other options. The added dead time starts at the end
of the boost inductor demagnetization cycle and ends at the
on-time start which is synchronized with the boost inductor
zero crossing (valley turn on) event.
In all cases, the circuit turns on in a drain-source voltage
valley:
• Classical Valley Turn On in CrM Operation
• At the First Valley Following the Completion of the
Dead-Time Generated by the VSFF Function to Reduce
the Frequency
One can also note that the switching frequency being less
when the load current is low, the frequency is particularly
low at light load, high line. On the other hand, CrM operation
being more likely to occur at heavy load, low line.
Refer to the data sheet for a detailed explanation of the
VSFF operation and of its implementation in the NCP1602
[2].
Iind
Vin
VDRV
Figure 4. Typical Waveform in CrM @ VMAINS = 110 V rms, FMAINS = 60 Hz, ILOAD = 400 mA
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5
NCP1602GEVB
VDRAIN Iind
Vin
VDRV
Figure 5. Typical Waveform in DCM @ VMAINS = 110 V rms, FMAINS = 60 Hz, ILOAD = 50 mA
VCRTL
VFB
VIN
Figure 6. No-Load Waveforms for Option AEA (Skip Mode Disabled) Featuring Static OVP @ VMAINS = 230 V rms
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6
NCP1602GEVB
VFB
VCTRL
VCC
Figure 7. Start-Up and Stop Sequence @ VMAINS = 90 V rms, ILOAD = 400 mA, VCC OFF % ON % OFF
Table 2. VCTRL VOLTAGE VS. ILOAD & VMAINS
VMAINS (V rms)
@ ILOAD = 400 mA
@ ILOAD = 300 mA
@ ILOAD = 100 mA
@ ILOAD = 50 mA
@ ILOAD = 0 mA
90
3.77
3.01
1.38
0.96
0.490
110
2.55
2.13
1.02
0.75
0.490
230
1.77
1.42
0.79
0.63
0.490
265
1.35
1.10
0.67
0.57
0.490
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7
NCP1602GEVB
POWER FACTOR AND EFFICIENCY
The NCP1602 evaluation board embeds a NTC to limit
the in-rush current that takes place when the PFC stage is
plugged in. The NTC is placed in series with the boost diode.
This location is rather optimum in term of efficiency since
it is in the in-rush current path at a place where the rms
current is less compared to the input side. However, this
component still consumes some power. That is why the
efficiency is given with a shorted NTC to approximately
improve the power efficiency value by 1 percent.
NCP1602 - Power Efficiency vs. VMAINS & Output Power
99.00
98.00
Power Efficiency (%)
97.00
96.00
95.00
94.00
93.00
Pow_Eff @ 265 V rms
92.00
Pow_Eff @ 230 V rms
Pow_Eff @ 110 V rms
91.00
Pow_Eff @ 90 V rms
90.00
0
10
20
30
40
50
60
70
80
90
100
Percent Of Max Output Power (%)
Figure 8. Evaluation Board Power Efficiency vs. Output Power (NTC is Shorted)
(100% Output Power Corresponds to 160 W)
operation. As previously stated, VSFF makes the switching
frequency decay linearly as a function of VCTRL voltage
(load current) when it goes below a preset level.
Figure 8 displays the efficiency versus load at different
line levels. When considering efficiency versus load, we
generally think of the traditional bell-shaped curves:
• At low line, the efficiency peaks somewhere at
a medium load and declines at full load as a result of
the conduction losses and at light load due to the
switching losses
• At high line, the conduction losses being less critical,
efficiency is maximal at or near the maximum load
point and decays when the power demand diminishes
because the increasing impact of the switching losses
PF and THD Performance Were Measured by Means of
a CHROMA 66202 Digital Power Meter
Figure 9 and Figure 10 show that VSFF exhibits very
similar PF ratios compared to those obtained with CrM
traditional operation. VSFF improves the THD performance
at light load. We can see on Figure 10 a 5% decrease of THD
value when switching from CrM mode to DCM mode. This
behavior is due to the fact that in CrM, close to mains voltage
zero crossing, there is a zone of zero mains current which
leads to a slight mains current distortion (higher THD).
When entering DCM, as a dead time is added, the inductor
peak current gets higher and the zero mains current region
becomes narrower, leading to a 5% decrease of the THD
value.
Curves of Figure 8 meet this behavior in the right-hand
side where our demo-board resembles a traditional CrM
PFC stage. In the left-hand side, the efficiency normally
drops because of the switching losses until an inflection
point where it rises up again as a result of the VSFF
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NCP1602GEVB
NCP1602 - PF (W/VA) vs. VMAINS & Output Power
1
PF (no unit)
0.9
0.8
0.7
PF @ 265 V rms
PF @ 230 V rms
0.6
PF @ 110 Vrms
PF @ 90 V rms
0.5
0
20
40
60
80
100
Percent Of Max Output Power (%)
Figure 9. Evaluation Board PF vs. Output Power
(100% Output Power Corresponds to 160 W)
NCP1602 - Total Harmonic Distortion vs. VMAINS & Output Power
25.00
Line Current THD (%)
20.00
15.00
10.00
THDi @ 265 V rms
THDi @ 230 V rms
5.00
THDi @ 110 V rms
THDi @ 90 V rms
0.00
0
10
20
30
40
50
60
70
80
90
100
Percent Of Max Output Power (%)
Figure 10. Evaluation Board THD vs. Output Power
(100% Output Power Corresponds to 160 W)
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9
NCP1602GEVB
PROTECTION OF THE STAGES
MOSFET current (VCSZCD). When VCSZCD exceeds
a 500-mV internal reference, the circuit forces the driver
low. A 400-ns blanking time prevents the OCP comparator
from tripping because of the switching spikes that occur
when the MOSFET turns on. In our application,
the theoretical maximal inductor current is:
The NCP1602 protection features allow for the design of
very rugged PFC stages
Brown-Out
Brown out detection is disabled in product option AEA
which is used in this Evaluation Board. If brown-is needed,
check which option is needed using the product data sheet
[2] and use the application note [1] for operating details.
I ind,max +
Over-Current Protection (OCP)
ǒ
Ǔ
500 mV
80 mW
[ 6.25 A
(eq. 1)
Figure 11 shows the inductor current when clamped. The
over-current situation was obtained @ VMAINS= 90 V rms
with a 427-mA load. A 20-V VCC power source was applied
to the board.
The NCP1602 is designed to monitor the current flowing
through the power switch. A current sense resistor (R3 of
Figure 2) is inserted between the MOSFET source and
ground to generate a positive voltage proportional to the
iL(t)
Figure 11. Inductor Current Showing OCP Limitation @ VMAINS = 90 V rms, FMAINS = 60 Hz, ILOAD = 427 mA
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NCP1602GEVB
DYNAMIC PERFORMANCE
The NCP1602 features the dynamic response enhancer
(DRE) that increases the loop gain by an order of magnitude
when the output voltage goes below 95.5% of its nominal
level. This function dramatically reduces undershoots in
case of an abrupt increase of the load demand. As an
example, Figure 12 illustrates a load step from 400 mA to
VFB
0 mA and 0 mA to 400 mA (2-A/ms slope) @ 110 V rms
input voltage. One can note that as a result of the DRE
function, the control signal (VCTRL) steeply rises multiple
times when the FB voltage goes below 0.955 ⋅ 2.5 V =
2.487 V.
Soft OVP
VCTRL
DRE
VDRV
Figure 12. Load Current Transient Featuring Soft OVP and DRE
@ ILOAD = 400 mA/0 mA, VMAINS = 110 V rms, VCC = 20 V
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NCP1602GEVB
BEHAVIOR UNDER FAILURE SITUATIONS
period, continuous conduction mode (CCM) can occur for
a few cycles. The NCP1602 incorporates a second
over-current comparator that trips whenever the MOSFET
current happens to exceed 150% of its maximum level. Such
an event can happen when a) the watchdog restarts a cycle
as explained before b) if the current slope is so sharp that the
main over-current comparator cannot prevent the current
from exceeding this second level as the result of the inductor
saturation for instance. In this case, the circuit detects an
“overstress” situation and disables the driver for an 800-ms
delay. This long delay leads to a very low duty-ratio
operation to dramatically limit the risk of overheating.
Figure 13 illustrates the operation while the bypass diode
and the NTC are both shorted @ VMAINS = 110 V with
a 400-mA load current, the NCP1602 being supplied by
a 20-V external power source. When the bypass diode is
shorted, the demagnetization of the inductor takes too much
time and the 200-ms Watchdog timer helps to start a new
on-time, during which the OCP limit is reached. Because the
previous demag was not reached and OCP is triggered,
a 800-ms timer is used before allowing to start a new
on-time. This helps limit the current resulting from the
shorting of the bypass diode and the very low duty-ratio
prevents the application from heating up.
Elements of the PFC stage can be accidently shorted,
badly soldered or damaged as a result of manufacturing
incidents, of an excessive operating stress or of other
troubles. In particular, adjacent pins of controllers can be
shorted, a pin, grounded or badly connected. It is often
required that such open/short situations do not cause fire,
smoke nor loud noise. The NCP1602 integrates functions
that help meet this requirement, for instance, in case of an
improper pin connection (including GND) or of a short of
the boost or bypass diode.
As an example, we will illustrate here the circuit operation
when the PFC bypass diode is shorted. When the PFC stage
is plugged in, a large in-rush current takes place that charges
the bulk capacitor to the line peak voltage. Traditionally,
a bypass diode (D2 in the application schematic of Figure 2)
is placed between the input and output high-voltage rails to
divert this inrush current from the inductor and boost diode.
When it is shorted, the bulk voltage being equal to the input
voltage, the inductor slightly demagnetizes owing to the
boost diode voltage drop. As this voltage is small, the
demagnetization can be extremely long. This is generally far
insufficient to prevent a cycle-by-cycle cumulative rise of
the inductor current and an unsafe heating of the inductor,
the MOSFET and the boost diode. As the internal 1602
watchdog may kick in during this long demagnetization
VCTRLVout
Iind
800 ms OVS
Timer
VDRV
Figure 13. From Steady Stage the Bypass Diode is Shorted
@ VMAINS = 110 V rms, FMAINS = 60 Hz, ILOAD = 400 mA, NTC Shorted
CAUTION:
Please note that we do not guarantee that the a NCP1602-driven PFC stage necessarily passes all the safety tests and in
particular the boost diode short one since the performance can vary with respect to the application or conditions. The reported
tests are intended to illustrate the typical behavior of the part in one particular application, highlighting the protections helping pass
the safety tests. The reported tests were made at 25°C ambient temperature.
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12
NCP1602GEVB
BILL OF MATERIALS
Table 3. NCP1602GEVB BILL OF MATERIALS
Reference
Qty.
Description
Value
Tolerance/
Constraints
Footprint
Manufacturer
Part
Number
C1, C2
2
Y Capacitors
1 nF
400 V
Through-Hole
TDK
CD70ZU2GA102MYNKA
C4, C3A,
C3B, C3C
4
X2 Capacitors
220 nF
305 V ac
Through-Hole
EPCOS
B32922C3224K
C5
1
Filtering Capacitors
470 nF
400 V
Through-Hole
EPCOS
B32592N6474K
C5A, C5B
2
Filtering Capacitors
220 nF
400 V
Through-Hole
EPCOS
B32522−E6224−K000
C7
1
Electrolytic Capacitor
22 mF
50 V
Through-Hole
Various
Various
C6A, C6B
2
Bulk Capacitor
68 mF
450 V
Through-Hole
RuBYCON
450QXW68M12.5X40
C13
1
Capacitor
100 nF
50 V
SMD, 1206
Various
Various
C10
1
Capacitor
220 nF
50 V
SMD, 1206
Various
Various
Various
C9
1
Capacitor
2.2 mF
50 V
SMD, 1206
Various
C11, C12
2
Capacitor
NC
50 V
SMD, 1206
Various
Various
CM1
1
Common Mode Filter
2 × 3.3 mH
5A
Through-Hole
Wurth Elektronik
750341632
L2
1
Boost Inductor
200 mH
6 A pk
Through-Hole
Wurth Elektronik
750370081 (EFD30)
D1
1
Boost Diode
MUR550
5 A, 520 V
Through-Hole
ON Semiconductor
MUR550APFG
D2
1
Bypass Diode
1N5406
3 A, 600 V
Through-Hole
ON Semiconductor
1N5406G
D3, D4
2
Switching Diode
1N4148
100 V
SOD123
ON Semiconductor
MMSD4148T1G
DZ2
1
33-V Zener Diode
MMSZ33T1
33 V, 0.5 W
SOD123
ON Semiconductor
MMSZ33T1G
U1
1
Diodes Bridge
GBU406
4 A, 600 V
Through-Hole
LITE-ON
GBU406
Q1
1
Power MOSFET
IPA50R250CP
550 V
TO220_C
Infineon
IPA50R250CP
R8
1
Resistor
680 kW
1%, 1/4 W
SMD, 1206
Various
Various
R9, R10
2
Resistor
1800 kW
1%, 1/4 W
SMD, 1206
Various
Various
R27
1
Resistor
0W
1%, 1/4 W
SMD, 1206
Various
Various
R11
1
Resistor
27 kW
1%, 1/4 W
SMD, 1206
Various
Various
C8
1
Capacitor
1 nF
10%, 25 V
SMD, 1206
Various
Various
R22
1
Resistor
5.1 MW
1%, 1/4 W
SMD, 1206
Various
Various
R23
1
Resistor
240 kW
1%, 1/4 W
SMD, 1206
Various
Various
R24
1
Resistor
240 kW
1%, 1/4 W
SMD, 1206
Various
Various
Q2
1
Switch MOSFET
NC
NA
NA
NA
NA
R30
1
Resistor
0W
NA
NA
NA
NA
R21
1
Resistor
39 kW
1%, 1/4 W
SMD, 1206
Various
Various
R31
1
Resistor
10 kW
1%, 1/4 W
SMD, 1206
Various
Various
R32
1
Resistor
NC
NA
NA
NA
NA
R33
1
Resistor
NC
NA
NA
NA
NA
R42
1
Resistor
NC
NA
NA
NA
NA
R41
1
Resistor
NC
NA
NA
NA
NA
R40
1
Resistor
NC
NA
NA
NA
NA
C30
1
Capacitor
NC
NA
NA
NA
NA
D6
1
Diode
NC
NA
NA
NA
NA
D5
1
Diode
NC
NA
NA
NA
NA
R39
1
Resistor
NC
NA
NA
NA
NA
R37
1
Resistor
NC
NA
NA
NA
NA
R36
1
Resistor
NC
NA
NA
NA
NA
R38
1
Resistor
NC
NA
NA
NA
NA
R34
1
Resistor
NC
NA
NA
NA
NA
R3
1
Resistor
80 mW
1%, 3 W
Through-Hole
Vishay
LVR03R0800FE12
R1, R2
2
X2 Capacitor
Discharge Resistors
1000 kW
1%, 500 V
SMD, 1206
Various
Various
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NCP1602GEVB
Table 3. NCP1602GEVB BILL OF MATERIALS (continued)
Reference
Qty.
Description
Value
Tolerance/
Constraints
Footprint
Manufacturer
Part
Number
R12
1
Resistor
22 kW
1%, 1/4 W
SMD, 1206
Various
Various
R4
1
Resistor
10 kW
10%, 1/4 W
SMD, 1206
Various
Various
R5
1
Resistor
2.2 W
10%, 1/4 W
SMD, 1206
Various
Various
R6
1
Resistor
22 W
10%, 1/4 W
SMD, 1206
Various
Various
R7, RZ
2
Resistors
0W
1%, 1/4 W
SMD, 1206
Various
Various
U2
1
PFC Controller
NCP1602-AEA
NA
TSOP6
ON Semiconductor
NCP1602−AEA
RTH1
1
Inrush Current Limiter
B57153S150M
1.8 A max
Through-Hole
EPCOS
B57153S0150M000
F1
1
4-A Fuse
4A-250V
250 V
Through-Hole
Multicomp
MCPEP 4 A 250 V
HS1
1
Heatsink_KL_195
−
−
−
COLUMBIA-STAVER
TP207ST, 120, 12.5, NA, SP, 03
REFERENCES
[3] NCP1602 Evaluation Board User’s Manual
https://cma.onsemi.com/pub_link/Collateral/EVBU
M2302−D.PDF
[1] “5 Key Steps to Designing a Compact,
High-Efficiency PFC Stage Using The NCP1602”,
Application note AND9218/D,
http://www.onsemi.com/pub_link/Collateral/
AND9218−D.PDF
[2] Data Sheet NCP1602/D,
http://www.onsemi.com/pub_link/Collateral/
NCP1602−D.PDF
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14
NCP1602GEVB
ANNEX
(Schematic & BOM for modifying the evaluation board in order to use the auxiliary winding voltage instead of
the power MOSFET drain voltage for CS/ZCD pin)
Using the schematic using Aux Winding Voltage has pros
and cons.
Pros:
• R38 and R39 Value can be Small and Sensitivity to
Noise and Parasitic Capacitance is Reduced
• Consumes No Power during Standby even if R38 and
R39 Value are Small
GND
DRV
Vcc
Vdrain
Vsource
Cons:
• Brown-Out Detection is Not Possible when Using
Brown-Out Activated Product Option
• The Simple Inductor Becomes a Transformer to which
an Auxiliary Winding is Added
R7
0W
DRV
4
3
CS/ZCD
C11
NC
C9
2.2 mF
R12
22 kW
C8
1 nF
R11
27 kW
C10
220 nF
R27
0R
R10
1800 kW
R9
1800 kW
R8
680 kW
S3
Top View
C13
100 nF
VCC
5
2
GND
6
1
VCTRL
FB
R38
2.2 kW
C12
NC
R36
47 kW
R39
30 kW
C30
47 nF
D6
1N4148
R40
100 W
Vaux
Vbulk
While this evaluation board uses the power MOSFET
drain voltage for ZCD detection using the CS/ZCD pin, it is
possible to configure this same evaluation board for using
the auxiliary winding voltage to feed the CS/ZCD pin for
ZCD detection. The power section of the schematic does not
change, it is only the control schematic which changes. The
components on the path between the power MOSFET drain
and CS/ZCD pin must be removed and new components
placed between the auxiliary winding voltage (VAUX) and
CS/ZCD pin must be added. The details of this modification
are entirely described by the schematic of Figure 14 and, the
bill of materials of Table 4. Application note AND9218/D
[1] gives the design procedure and equations.
Figure 14. Application Schematic − Control Section for ZCD Detection using Auxiliary Winding (VAUX)
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15
NCP1602GEVB
Table 4. NCP1602GEVB BILL OF MATERIALS FOR ZCD DETECTION USING AUXILIARY WINDING (VAUX)
Reference
Qty.
Description
Value
Tolerance/
Constraints
Footprint
Manufacturer
Part
Number
C1, C2
2
Y Capacitors
1 nF
400 V
Through-Hole
TDK
CD70ZU2GA102MYNKA
C4, C3A,
C3B, C3C
4
X2 Capacitors
220 nF
305 V ac
Through-Hole
EPCOS
B32922C3224K
C5
1
Filtering Capacitors
470 nF
400 V
Through-Hole
EPCOS
B32592N6474K
C5A, C5B
2
Filtering Capacitors
220 nF
400 V
Through-Hole
EPCOS
B32522−E6224−K000
C7
1
Electrolytic Capacitor
22 mF
50 V
Through-Hole
Various
Various
C6A, C6B
2
Bulk Capacitor
68 mF
450 V
Through-Hole
RuBYCON
450QXW68M12.5X40
C13
1
Capacitor
100 nF
50 V
SMD, 1206
Various
Various
C10
1
Capacitor
220 nF
50 V
SMD, 1206
Various
Various
C9
1
Capacitor
2.2 mF
50 V
SMD, 1206
Various
Various
C11, C12
2
Capacitor
NC
50 V
SMD, 1206
Various
Various
CM1
1
Common Mode Filter
2 × 3.3 mH
5A
Through-Hole
Wurth Elektronik
750341632
L2
1
Boost Inductor
200 mH
6 A pk
Through-Hole
Wurth Elektronik
750370081 (EFD30)
D1
1
Boost Diode
MUR550
5 A, 520 V
Through-Hole
ON Semiconductor
MUR550APFG
D2
1
Bypass Diode
1N5406
3 A, 600 V
Through-Hole
ON Semiconductor
1N5406G
D3, D4
2
Switching Diode
1N4148
100 V
SOD123
ON Semiconductor
MMSD4148T1G
DZ2
1
33-V Zener Diode
MMSZ33T1
33 V, 0.5 W
SOD123
ON Semiconductor
MMSZ33T1G
U1
1
Diodes Bridge
GBU406
4 A, 600 V
Through-Hole
LITE-ON
GBU406
Q1
1
Power MOSFET
IPA50R250CP
550 V
TO220_C
Infineon
IPA50R250CP
R8
1
Resistor
680 kW
1%, 1/4 W
SMD, 1206
Various
Various
R9, R10
2
Resistor
1800 kW
1%, 1/4 W
SMD, 1206
Various
Various
R27
1
Resistor
0W
1%, 1/4 W
SMD, 1206
Various
Various
R11
1
Resistor
27 kW
1%, 1/4 W
SMD, 1206
Various
Various
C8
1
Capacitor
1 nF
10%, 25 V
SMD, 1206
Various
Various
R22
1
Resistor
NC
NA
NA
NA
NA
R23
1
Resistor
NC
NA
NA
NA
NA
R24
1
Resistor
NC
NA
NA
NA
NA
NA
Q2
1
Switch MOSFET
NC
NA
NA
NA
R30
1
Resistor
NC
NA
NA
NA
NA
R21
1
Resistor
0W
1%, 1/4 W
SMD, 1206
Various
Various
R31
1
Resistor
NC
NA
NA
NA
NA
R32
1
Resistor
NC
NA
NA
NA
NA
R33
1
Resistor
NC
NA
NA
NA
NA
R42
1
Resistor
NC
NA
NA
NA
NA
R41
1
Resistor
0W
1%, 1/4 W
SMD, 1206
Various
Various
R40
1
Resistor
100 W
10%, 1/4 W
SMD, 1206
Various
Various
C30
1
Capacitor
47 nF
1%, 25 V
SMD, 1206
Various
Various
D6
1
Diode
1N4148
100 V
SOD123
ON Semiconductor
MMSD4148T1G
D5
1
Diode
0W
1%, 1/4 W
SMD, 1206
Various
Various
R39
1
Resistor
30 kW
1%, 1/4 W
SMD, 1206
Various
Various
R37
1
Resistor
0W
1%, 1/4 W
SMD, 1206
Various
Various
R36
1
Resistor
47 kW
1%, 1/4 W
SMD, 1206
Various
Various
R38
1
Resistor
2.2 kW
1%, 1/4 W
SMD, 1206
Various
Various
R34
1
Resistor
0W
1%, 1/4 W
SMD, 1206
Various
Various
R3
1
Resistor
80 mW
1%, 3 W
Through-Hole
Vishay
LVR03R0800FE12
R1, R2
2
X2 Capacitor
Discharge Resistors
1000 kW
1%, 500 V
SMD, 1206
Various
Various
R12
1
Resistor
22 kW
1%, 1/4 W
SMD, 1206
Various
Various
R4
1
Resistor
10 kW
10%, 1/4 W
SMD, 1206
Various
Various
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16
NCP1602GEVB
Table 4. NCP1602GEVB BILL OF MATERIALS FOR ZCD DETECTION USING AUXILIARY WINDING (VAUX) (continued)
Reference
Qty.
Description
Value
Tolerance/
Constraints
Footprint
Manufacturer
Part
Number
R5
1
Resistor
2.2 W
10%, 1/4 W
SMD, 1206
Various
Various
Various
R6
1
Resistor
22 W
10%, 1/4 W
SMD, 1206
Various
R7, RZ
2
Resistors
0W
1%, 1/4 W
SMD, 1206
Various
Various
U2
1
PFC Controller
NCP1602-AEA
NA
TSOP6
ON Semiconductor
NCP1602−AEA
RTH1
1
Inrush Current Limiter
B57153S150M
1.8 A max
Through-Hole
EPCOS
B57153S0150M000
F1
1
4-A Fuse
4A-250V
250 V
Through-Hole
Multicomp
MCPEP 4 A 250 V
HS1
1
Heatsink_KL_195
−
−
−
COLUMBIA-STAVER
TP207ST, 120, 12.5, NA, SP, 03
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