Si4542DY Datasheet

Si4542DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
- 30
RDS(on) (Ω)
ID (A)
0.025 at VGS = 10 V
6.9
0.035 at VGS = 4.5 V
5.8
0.032 at VGS = - 10 V
- 6.1
0.045 at VGS = - 4.5 V
- 5.1
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
D1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G2
G1
Top View
Ordering Information: Si4542DY-T1-E3 (Lead (Pb)-free)
Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
D2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
30
- 30
Gate-Source Voltage
VGS
± 20
± 20
6.9
- 6.1
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
ID
5.5
- 4.9
IDM
40
- 40
IS
1.7
PD
Unit
V
A
- 1.7
2.0
1.3
W
TJ, Tstg
- 55 to 150
Symbol
N- or P-Channel
Unit
RthJA
62.5
°C/W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 70666
S09-0868-Rev. G, 18-May-09
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Si4542DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
VDS = VGS, ID = 250 µA
N-Ch
1.0
VDS = VGS, ID = - 250 µA
P-Ch
- 1.0
VDS = 0 V, VGS = ± 20 V
IGSS
VDS = 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
IDSS
V
N-Ch
± 100
P-Ch
± 100
N-Ch
1
VDS = - 30 V, VGS = 0 V
P-Ch
-1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
N-Ch
25
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
P-Ch
- 25
VDS ≥ 5 V, VGS = 10 V
N-Ch
20
VDS ≤ - 5 V, VGS = - 10 V
P-Ch
- 20
VGS = 10 V, ID = 6.9 A
N-Ch
ID(on)
RDS(on)
gfs
VSD
nA
µA
A
0.020
0.025
VGS = - 10 V, ID = - 6.1 A
P-Ch
0.026
0.032
VGS = 4.5 V, ID = 5.8 A
N-Ch
0.026
0.035
VGS = - 4.5 V, ID = - 5.1 A
P-Ch
0.036
0.045
VDS = 15 V, ID = 6.9 A
N-Ch
25
VDS = - 15 V, ID = - 6.1 A
P-Ch
16
IS = 1.7 A, VGS = 0 V
N-Ch
1.2
IS = - 1.7 A, VGS = 0 V
P-Ch
- 1.2
Ω
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Qg
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
Reverse Recovery Time
N-Channel
VDS = 15 V, VGS = 10 V, ID = 6.9 A
P-Channel
VDS = - 15 V, VGS = - 10 V, ID = - 6.1 A
td(on)
N-Channel
VDD = 15 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
tr
td(off)
tf
Qrr
30
50
P-Ch
32
50
N-Ch
7.5
P-Ch
7.0
N-Ch
3.5
P-Ch
5.0
nC
N-Ch
0.5
2
3.4
P-Ch
2
4
6.8
N-Ch
12
20
P-Ch
10
20
N-Ch
10
20
P-Ch
10
20
N-Ch
60
90
P-Ch
55
80
N-Ch
15
30
P-Ch
25
40
IF = 1.7 A, dI/dt = 100 A/µs
N-Ch
50
90
IF = - 1.7 A, dI/dt = 100 A/µs
P-Ch
50
90
IF = 1.7 A, dI/dt = 100 A/µs
N-Ch
45
IF = - 1.7 A, dI/dt = 100 A/µs
P-Ch
55
P-Channel
VDD = - 15 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
trr
N-Ch
Ω
ns
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70666
S09-0868-Rev. G, 18-May-09
Si4542DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
40
40
VGS = 10 V thru 5 V
32
30
I D - Drain Current (A)
I D - Drain Current (A)
4V
24
16
20
TC = 125 °C
10
8
25 °C
3V
0
0.0
- 55 °C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
4.0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3000
0.05
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
2500
0.04
VGS = 4.5 V
0.03
0.02
VGS = 10 V
0.01
2000
1500
Coss
1000
500
Crss
0
0.00
0
10
20
30
0
40
5
10
20
25
30
VDS - Drain-to-Source Voltage (V)
I D - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
10
VGS = 10 V
ID = 6.9 A
VDS = 15 V
ID = 6.9 A
1.4
8
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
15
6
4
1.2
1.0
0.8
2
0
0
6
12
18
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 70666
S09-0868-Rev. G, 18-May-09
24
30
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4542DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
0.10
40
30
RDS(on) - On-Resistance(Ω)
I S - Source Current (A)
20
10
TJ = 150 °C
TJ = 25 °C
0.06
0.04
ID = 6.9 A
0.02
0.00
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
0.4
0.2
25
ID = 250 µA
0.0
20
- 0.2
Power (W)
VGS(th) Variance (V)
0.08
- 0.4
15
TC = 25 °C
Single Pulse
10
- 0.6
5
- 0.8
0
0.01
- 1.0
- 50
- 25
0
25
50
75
100
125
150
0.10
1.00
10.00
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 62.5 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10- 4
10- 3
4. Surface Mounted
10- 2
10- 1
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 70666
S09-0868-Rev. G, 18-May-09
Si4542DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
40
40
TC = - 55 °C
VGS = 10 V thru 5 V
32
I D - Drain Current (A)
ID - Drain Current (A)
32
4V
24
16
8
2, 1 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
125 °C
24
16
8
3V
0
0.0
25 °C
0
0
4.0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
3200
0.10
2400
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
0.08
0.06
VGS = 4.5 V
0.04
VGS = 10 V
1600
Coss
800
0.02
Crss
0
0.00
0
8
16
24
32
0
40
6
12
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
10
1.75
VDS = 15 V
ID = 6.1 A
8
1.50
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
18
6
4
2
VGS = 10 V
ID = 6.1 A
1.25
1.00
0.75
0
0
7
14
21
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 70666
S09-0868-Rev. G, 18-May-09
28
35
0.50
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4542DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
40
RDS(on) - On-Resistance (Ω)
0.20
I S - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
1
0.16
0.12
ID = 6.1 A
0.08
0.04
0.00
0
0.3
0.6
0.9
1.2
1.5
0
VSD - Source-to-Drain Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
VGS(th) Variance (V)
2
4
6
8
VGS - Gate-to-Source Voltage (V)
0.8
30
0.6
25
ID = 250 µA
0.4
Power (W)
20
0.2
15
0.0
10
- 0.2
5
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.10
1.00
Time (s)
TJ - Temperature (°C)
10.00
Single Pulse Power
Threshold Voltage
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 62.5 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10- 4
10- 3
4. Surface Mounted
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70666.
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Document Number: 70666
S09-0868-Rev. G, 18-May-09
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Revision: 02-Oct-12
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Document Number: 91000