DB3

DB3 , DB4 , DB31 , DB32
DB3 , DB4 , DB31 , DB32
Bidirectional Si-Trigger-Diodes (DIAC)
Bidirektionale Si-Triggerdioden (DIAC)
Version 2012-07-03
Breakover voltage
Durchbruchspannung
±0.4
3.9
Type
62.5
±3
Ø 1.9 ±0.1
Ø max 0.5
28 ... 45 V
Peak pulse current
Max. Triggerimpuls
±2A
Glass case
Glas-Gehäuse
~ DO-35
~ SOD-27
Weight approx.
Gewicht ca.
0.13 g
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions - Maße [mm]
Maximum ratings
Grenzwerte
Power dissipation
Verlustleistung
TA = 50°C
Ptot
150 mW 1)
Peak pulse current (120 Hz pulse repetition rate)
Max. Triggerstrom (120 Hz Puls-Wiederholrate)
tp ≤ 10 µs
IPM
± 2 A 1)
Tj
TS
-50...+100°C
-50...+175°C
Operating Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics
Breakover voltage
Durchbruchspannung
Kennwerte
dV/dt = 10 V/µs
DB3
DB31
DB32
DB4
VBO
VBO
VBO
VBO
Breakover current – Durchbruchstrom
V = 98% VBO
IBO
Asymmetry of breakover voltage
Unsymmetrie der Durchbruchspannung
|V(BO)F – V(BO)R|
ΔVBO
< 3.8 V
Foldback voltage – Spannungs-Rücksprung
ΔI = IBO to/auf IF = 10 mA
dV/dt = 10 V/µs
ΔVF/R
>5V
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
1
RthA
28 ...
30 ...
32 ...
35 ...
36
34
36
45
V
V
V
V
< 200 µA
< 300 K/W 1)
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
DB3 , DB4 , DB31 , DB32
2
http://www.diotec.com/
© Diotec Semiconductor AG
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