DG2522 Datasheet

DG2522
Vishay Siliconix
Low Voltage, Fault Protection, SP3T Analog Switch
(3:1 Multiplexer/Demultiplexer)
DESCRIPTION
FEATURES
The DG2522 is a low on-resistance SP3T analog switch
design to operation from 1.6 V to 5.5 V.
The DG2522 switches signals in either direction with
amplitudes up to V+. Protection circuit is built in to isolate the
signals if any of them swings above V+. It guaranteed low
leakage level for isolation in power down mode.
Built on Vishay Siliconix’s sub-micro CMOS technology, the
DG2522 achieves switch on-resistance of 0.8 Ω at 4.5 V V+
with 0.6 Ω flatness. It has superior 0.008 % THD (total
harmonic distortion) over frequency of 20 Hz to 20 kHz. It
provides - 59 dB off-Isolation, - 65 dB crosstalk at 1 MHz, and
105 MHz - 3 dB bandwidth.
The select pin of the control logic input can tolerate voltages
above V+ up to 5.5 V. Logic high 1.8 V is guaranteed over the
full V+ range that makes it compatible with many low voltage
digital control circuits.
The features of ultra small package size, wide V+ range, low
on-resistance, low logic threshold, and switch isolation under
fault condition make it an ideal device for battery operated
devices to handle signals such as audio, video, data stream,
and other high accuracy signals.
•
•
•
•
•
•
•
Isolation at V+ = 0 V and signal above V+
Logic input tolerates up to 5.5 V
1.6 V to 5.5 V operation voltage range
Guaranteed 1.8 V VTH(high) at V+ = 4.5 V
0.008 % total harmonic distortion
Low switch on-resistance
300 mA latch up current per JESD78
RoHS
COMPLIANT
BENEFITS
• Ultra small miniQFN8 package of 1.4 mm x 1.4 mm
x 0.55 mm
• High fidelity audio switch
• Reed relay replacement
• Low power consumption
APPLICATIONS
•
•
•
•
•
•
•
The DG2522 comes in a small miniQFN-8 lead package of
1.4 mm x 1.4 mm x 0.55 mm. As a committed partner to the
community and the environment, Vishay Siliconix
manufactures this product with the lead (Pb)-free device
termination and is 100 % RoHS compliant.
Cellular phones and PDAs
GPS and portable media players
Modems and wireless cards
Computers peripherals
Communication and network circuits
Low voltage data acquisition systems
Portable instrumentation
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
COM
IN1
IN2
DG2522
miniQFN - 8L
7
6
5
Control
V+
8
4
GND
1
2
3
S0
S1
S2
Px
Top View
Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
Pin 1
Device marking: Px for DG2522
x = Date/Lot Traceability Code
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1
DG2522
Vishay Siliconix
TRUTH TABLE DG2522
IN1 (Pin 6)
IN2 (Pin 5)
0
0
COM diconnect
1
0
COM (Pin 7) = S0 (Pin 1)
0
1
COM (Pin 7) = S1 (Pin 2)
1
1
COM (Pin 7) = S2 (Pin 3)
Function
ORDERING INFORMATION
Temp. Range
Package
Part Number
- 40 °C to 85 °C
miniQFN-8L
DG2522DN-T1-E4
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Reference to GND
V+
IN, COM, SXa
Limit
- 0.3 to 6.0
- 0.3 to (V+ + 0.3)
30
± 300
± 500
- 65 to 150
190
Unit
V
Current (Any terminal except SX or COM)
mA
Continuous Current (SX or COM)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
°C
Power Dissipation (Packages)b
miniQFN-8Lc
mW
Notes:
a. Signals on S0, S1, S2 and COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 2.4 mW/°C above 70 °C.
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Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
DG2522
Vishay Siliconix
SPECIFICATIONS V+ = 5 V
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %,VIN = 0.6 V or 1.8 Ve
Limits
- 40 °C to 85 °C
Temp.a
Min.b
RDS(on)
Full
0
V+ = 4.5 V, ISX = 100 mA, VCOM = 2.5 V
Room
Typ.c
Max.b
Unit
V+
V
0.8
1.1
Analog Switch
Analog Signal Ranged
On-Resistance
Vanalog
RDS(on)
RON Match
RON Resistance Flatness
Switch Off Leakage
Current
Channel-On Leakage
Current
V+ = 4.5 V, ISX = 100 mA, VCOM = 2.5 V
Full
1.5
ΔRON
V+ = 4.5 V, ISX = 100 mA, VCOM = 2.5 V
Room
0.1
RON
flatness
V+ = 4.5 V, ISX = 100 mA,
VCOM = 0.5 V, 2.5 V
Room
ISX(off)
ICOM(off)
ICOM(on)
Power Down Leakage
V+ = 5.5 V, VSX = 1 V/4.5 V,
VCOM = 4.5 V/1 V
V+ = 4.3 V, VSX = VCOM = 4.5 V/1 V
V+ = 0 V, VSX = 0 V/5.5 V, VCOM = 5.5 V/0 V
0.2
0.6
Room
- 20
20
Full
- 120
120
Room
- 20
20
Full
- 120
120
Room
Full
- 20
20
- 120
120
Room
-1
Full
- 25
0.001
Ω
1
25
nA
µA
Digital Control
Input High Voltage
VINH
Input Low Voltage
VINL
V+ = 2.7 V
V+ = 4.5 V
Full
1.6
Full
1.8
CIN
f = 1 MHz, VINx = 0 V
Room
IINL or IINH
VIN = 0 or V+
Full
Break-Before-Make Timee
tBBM
V+ = 5.0 V, VSX = V+,
RL = 50 Ω, CL = 35 pF (see figure 2)
Room
Enable Turn-On Timee
tON
Enable Turn-Off Timee
tOFF
Input Capacitance
Input Current
V
Full
0.6
5
-1
pF
1
µA
Dynamic Characteristics
Charge Injectiond
Off-Isolationd
Crosstalkd
- 3 dB Bandwidth
d
Source Off Capacitanced
Full
8
14
Room
V+ = 5.0 V, VSX = V+,
RL = 50 Ω, CL = 35 pF (see figure 1)
53
Full
Room
40
Full
ns
60
70
Q
CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V
OIRR
RL = 50 Ω, CL = 5 pF, f = 1 MHz
XTALK
RL = 50 Ω, CL = 5 pF, f = 1 MHz
Room
BW
RL = 50 Ω, CL = 5 pF
Room
105
CSX(off)
f = 1 MHz, VNX = 0 V
Room
17
Room
27
pC
- 59
dB
- 64
Drain Off Capacitanced
CCOM(off)
f = 1 MHz, VCOM = 0 V
Room
51
Drain On Capacitanced
CCOM(on)
f = 1 MHz, VCOM = VNX = 0 V
Room
70
THD
V+ = 5 V, VIN = 1 VRMS, RL = 600 Ω
f = 20 Hz to 20 kHz
Room
0.008
VIN = 0 or V+
Full
Total Harmonic Distortiond
75
85
MHz
pF
%
Power Supply
Power Supply Range
V+
Power Supply Current
I+
1.6
5.5
V
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
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DG2522
Vishay Siliconix
5.0
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V+ = 1.6 V
ISX = 100 mA
4.5
4.0
V+ = 1.6 V
V+ = 2.3 V
V+ = 3.0 V V+ = 4.5 V
V+ = 5.5 V
RON - On-Resistance (Ω)
RON - On-Resistance (Ω)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
- 40 °C
3.5
+ 25 °C
+ 85 °C
3.0
2.5
2.0
1.5
1.0
0.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.0
5.5
0
0.2
0.4
VD - Analog Voltage (V)
1
1.2
1.4
1.6
5.0
5.0
V+ = 2.3 V
ISX = 100 mA
4.5
4.5
V+ = 3.0 V
ISX = 100 mA
4.0
3.5
3.0
2.5
+ 85 °C
+ 25 °C
- 40 °C
2.0
1.5
RON - On-Resistance (Ω)
4.0
3.5
3.0
2.5
+ 25 °C
0.5
0.5
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.0
0.0
2.2
0.3
0.6
0.9
VD - Analog Voltage (V)
1.2
1.5
1.8
2.1
2.4
2.7
3.0
VD - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
RON vs. Analog Voltage and Temperature
5.0
5.0
4.5
- 40 °C
1.5
1.0
0
+ 85 °C
2.0
1.0
0.0
V+ = 4.5 V
ISX = 100 mA
4.5
V+ = 5.5 V
ISX = 100 mA
4.0
RON - On-Resistance (Ω)
4.0
RON - On-Resistance (Ω)
0.8
RON vs. Analog Voltage and Temperature
RON vs. VD and Single Supply Voltage
RON - On-Resistance (Ω)
0.6
VD - Analog Voltage (V)
3.5
3.0
2.5
2.0
+ 85 °C
1.5
- 40 °C
+ 25 °C
3.5
3.0
2.5
2.0
1.5
1.0
1.0
0.5
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VD - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
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4
4.5
+ 85 °C
+ 25 °C
- 40 °C
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VD - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
DG2522
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 000
10 mA
V+ = 4.3 V
V+ = 5.5 V
1 mA
10 000
ICOM(ON)
Leakage Current (pA)
I+ - Supply Current (A)
V+ = 3.6 V
100 µA
V+ = 3.0 V
10 µA
1 µA
100 nA
V+ = 2.3 V
1000
ICOM(OFF)
100
ISX(OFF)
10
10 nA
V+ = 1.6 V
1
1 nA
100 pA
10
100
1K
10K
100K
1M
0.1
- 60 - 40 - 20
10M
0
80
100 120 140
V+ = 5.0 V
-1
-2
-3
VIH
Gain (dB)
VT - Switching Threshold (V)
60
0
VIL
-4
-5
-6
-7
-8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1
10
100
1000
10 000
Frequency (MHz)
V+ - Supply Voltage (V)
Gain vs. Frequency
Switching Threshold vs. Supply Voltage
0
0
- 20
- 30
- 30
- 40
- 40
Crosstalk
- 20
- 50
- 60
- 50
- 60
- 70
- 70
- 80
- 80
- 90
- 90
- 100
- 100
10
1
100
Frequency (MHz)
Off Isolation vs. Frequency
Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
V+ = 5.0 V
- 10
V+ = 5.0 V
- 10
Off Isolation (dB)
40
Leakage Current vs. Temperature
Supply Current vs. Input Switching Frequency
1.50
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
1.5
20
Temperature (°C)
Input Switching Frequency (Hz)
1000
1
10
100
1000
Frequency (MHz)
Crosstalk vs. Frequency
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DG2522
Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
V+
tr < 5 ns
tf < 5 ns
50 %
VINL
Switch Output
COM
SX
Switch
Input
VINH
VOUT
0.9 x V OUT
Logic
Input
Switch
Output
IN
RL
50 Ω
GND
CL
35 pF
0V
tON
tOFF
0V
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT = VCOM
(R L
RL
+ R
ON
)
Figure 1. Switching Time
V+
50 %
VIN1
0V
S1
50 Ω
V+
VS
S0
IN1
S2
VS
COM
IN2
tr < 5 ns
tf < 5 ns
VCC
V+
GND
VO
50 Ω
90 %
VO
35 pF
0V
t BBM
Figure 2. Break-Before-Make (DG2749)
ΔVO
V+
Rg
Vg
VIN = 0 - V+
VO
INX
V+
SX
IN
OFF
COM
ON
OFF
VO
CL
1 nF
GND
INX
OFF
ON
Q = ΔVO x CL
OFF
Figure 3. Charge Injection
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Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
DG2522
Vishay Siliconix
TEST CIRCUITS
V+
V+
SX
IN
0 V, V+
COM
RL
GND
Analyzer
Off Isolation = 20 log
VCOM
VSX
Figure 4. Off-Isolation
V+
Network Analyzer
V+
IN1
V+
VIN
S2
IN2
Rg = 50 Ω
Vg
COM
VOUT
S0
50 Ω
GND
50 Ω
Crosstalk = 20 log
VOUT
VIN
Figure 5. Crosstalk
V+
V+
COM
Meter
IN
0 V, V+
SX
HP4192A
Impedance
Analyzer
or Equivalent
GND
f = 1 MHz
Figure 6. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68831.
Document Number: 68831
S09-0293-Rev. B, 23-Feb-09
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7
Package Information
Vishay Siliconix
MINIQFN-8L CASE OUTLINE
A
D
6
5
5
6
7
L
7
b
4
8
4
E
8
L
L
L
1
2
3
3
2
1
A
A1
c
e
MILLIMETERS
INCHES
DIM
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.50
0.55
0.60
0.0197
0.0217
0.0236
A1
0.00
-
0.05
0.000
-
0.002
b
0.15
0.20
0.25
0.006
0.008
0.010
c
0.15 REF
0.006 REF
D
1.35
1.40
1.45
0.053
0.055
0.057
E
1.35
1.40
1.45
0.053
0.055
0.057
e
L
0.40 BSC
0.35
0.40
0.016 BSC
0.45
0.014
0.016
0.018
ECN: C-08336-Rev. A, 05-May-08
DWG: 5964
Document Number: 68674
Revision: 05-May-08
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1
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR MINI QFN 8L
1.70
0.80
1.70
0.60
x6
0.125
typ. 0.25
x2
0.50
0.40
0.25
x6
Suggested Minimum Pad
Dimensions in mm
Document Number: 66555
Revision: 05-Mar-10
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Legal Disclaimer Notice
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Vishay
Disclaimer
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disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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