Transistors 2SB1434 Silicon PNP epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 ■ Features • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping (1.45) 0.5 4.5±0.1 For low-frequency output amplification Complementary to 2SD2177 14.5±0.5 0.65 max. +0.1 Symbol Rating Unit Collector to base voltage VCBO −50 V Collector to emitter voltage VCEO −50 V Emitter to base voltage VEBO −5 V Peak collector current ICP −3 A Collector current IC −2 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2.5±0.5 2 3 2.5±0.1 Parameter 2.5±0.5 1 +0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.45−0.05 0.45−0.05 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion 1: Emitter 2: Collector 3: Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+− 0.1 0.05 (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit − 0.1 µA Collector cutoff current ICBO VCB = −20 V, IE = 0 Collector to base voltage VCBO IC = −10 µA, IE = 0 −50 V Collector to emitter voltage VCEO IC = −1 mA, IB = 0 −50 V Emitter to base voltage VEBO IE = −10 µA, IC = 0 −5 V VCE = −2 V, IC = −200 mA 120 hFE2 VCE = −2 V, IC = −1 A 60 Collector to emitter saturation voltage *1 VCE(sat) IC = −1 A, IB = −50 mA − 0.2 − 0.3 V Base to emitter saturation voltage *1 VBE(sat) IC = −1 A, IB = −50 mA − 0.85 −1.2 V Forward current transfer ratio *1 Transition frequency hFE1 *2 fT Collector output capacitance Cob 340 VCB = −10 V, IE = 50 mA, f = 200 MHz 110 VCB = −10 V, IE = 0, f = 1 MHz 40 MHz 60 pF Note) *1: Pulse measurement *2: Rank classification Rank R S No-rank hFE1 120 to 240 170 to 340 120 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SB1434 Transistors Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness. 1.0 0.8 0.6 −1.6 −1.2 0 0 20 40 60 80 100 120 140 160 VBE(sat) IC IB = −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA 0 –2 –4 –6 –8 500 IC / IB = 20 –10 Ta = 100°C 25°C − 0.1 −25°C − 0.03 − 0.01 − 0.003 − 0.001 − 0.01 − 0.03 − 0.1 − 0.3 −10 −3 25°C −1 Ta = −25°C 75°C − 0.03 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 −1 −3 −10 Collector current IC (A) 200 VCE = −2 V IE = 0 f = 1 MHz Ta = 25°C 200 160 120 80 40 0 −1 −3 −10 −30 Ta = 100°C 25°C −25°C 100 −1 −3 Collector current IC (A) Cob VCB 240 300 0 − 0.01 − 0.03 − 0.1 − 0.3 −100 Collector to base voltage VCB (V) −3 −10 fT IE 400 200 −1 Collector current IC (A) Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) −1 VCB = −10 V Ta = 25°C −30 − 0.1 Collector output capacitance Cob (pF) −3 hFE IC − 0.3 2 IC / IB = 20 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) −100 −10 − 0.3 − 0.4 0.2 0 Ta = 25°C − 0.8 0.4 VCE(sat) IC −2.0 Collector current IC (A) Collector power dissipation PC (W) IC VCE −2.4 Collector to emitter saturation voltage VCE(sat) (V) PC Ta 1.2 −10 160 120 80 40 0 1 3 10 30 Emitter current IE (mA) 100