Si8407DB Datasheet

Si8407DB
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
ID (A)
0.027 at VGS = - 4.5 V
- 8.2
0.032 at VGS = - 2.5 V
- 7.5
0.045 at VGS = - 1.8 V
- 6.6
MICRO FOOT
Bump Side View
S
S
4
6
G
S
3
• TrenchFET® Power MOSFET
• MICRO FOOT® Chipscale Packaging
Reduces Ultra-Low Footprint Area Profile
(0.62 mm) and On-Resistance
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Backside View
5
• Halogen-free according to IEC 61249-2-21
Definition
• Portable Devices
- PA Switch
- Battery Switch
- Load Switch
S
1
D
D
2
G
Device Marking: 8407
xxx = Date/Lot Traceability Code
Ordering Information: Si8407DB-T2-E1 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
IS
TA = 25 °C
TA = 70 °C
- 5.8
- 6.5
- 4.6
- 15
- 2.6
- 1.34
2.9
1.47
1.86
0.94
TJ, Tstg
Operating Junction and Storage Temperature Range
b
PD
V
- 8.2
IDM
Pulsed Drain Current
Package Reflow Conditions
ID
Unit
- 55 to 150
IR/Convection
A
W
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (drain)
Symbol
t5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
33
43
72
85
15
19
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
Document Number: 72254
S11-1383-Rev. D, 11-Jul-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8407DB
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
- 0.4
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 350 µA
- 0.9
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 70 °C
-5
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
a
-5
A
VGS = - 4.5 V, ID = - 1 A
0.022
0.027
VGS = - 2.5 V, ID = - 1 A
0.026
0.032
VGS = - 1.8 V, ID = - 1 A
0.033
0.045
gfs
VDS = - 10 V, ID = - 1 A
10
VSD
IS = - 1 A, VGS = 0
- 0.6
- 1.1
32
50
VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A
3.6
RDS(on)
Forward Transconductancea
Diode Forward Voltage
VDS  - 5 V, VGS = - 4.5 V
µA

S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
8.5
VDD = - 10 V, RL = 10 
ID  - 1 A, VGEN = - 4.5 V, Rg = 6 
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
IF = - 1 A, dI/dt = 100 A/µs
30
45
45
70
550
825
220
330
265
500
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
15
VGS = 4.5 thru 2 V
12
1.5 V
I D - Drain Current (A)
I D - Drain Current (A)
12
9
6
9
6
TC = 125 °C
3
3
25 °C
1V
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
2.5
- 55 °C
3.0
0
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72254
S11-1383-Rev. D, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8407DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2500
0.06
Ciss
2000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.05
0.04
VGS = 1.8 V
VGS = 2.5 V
0.03
0.02
1500
1000
VGS = 4.5 V
Coss
500
0.01
Crss
0
0.00
0
4
8
12
16
0
20
4
8
On-Resistance vs. Drain Current
20
1.6
VDS = 10 V
ID = 1 A
4
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
16
Capacitance
5
3
2
1
0
5
10
15
20
25
30
35
1.2
1.0
0.8
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.10
20
RDS(on) - On-Resistance (Ω)
10
TJ = 150 °C
TJ = 25 °C
1
0.0
VGS = 4.5 V
ID = 1 A
1.4
0.6
- 50
0
I S - Source Current (A)
12
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
0.08
ID = 1 A
0.06
0.04
0.02
0.00
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72254
S11-1383-Rev. D, 11-Jul-11
1.5
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8407DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.6
60
ID = 350 µA
50
40
Power (W)
V GS(th) Variance (V)
0.4
0.2
0.0
30
20
- 0.2
10
- 0.4
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
0
0.001
150
Threshold Voltage
0.01
0.1
Time (s)
10
1
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10 µs, 100 µs
I D - Drain Current (A)
10
1 ms
1
0.1
10 ms
TA = 25 °C
Single Pulse
100 ms
1s
10 s
100 s, DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 72 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72254
S11-1383-Rev. D, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8407DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72254
S11-1383-Rev. D, 11-Jul-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8407DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 6-BUMP (2.4 mm x 2 mm, 0.8 mm PITCH)
e
e
e
Recommended Land
Backside Labels
D
S1
e
s
R
e
Q
6 Bumps (Note 2)
Bump Diameter:
φ 0.38 - 0.40 mm
Note 3
A2
E
e
P
A1
1
A
2
Notes (Unless Otherwise Specified):
1. All dimensions are in millimeters.
2. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu with diameter 0.38 mm - 0.40 mm.
3. Backside surface is coated with a Ti/Nl/Ag layer.
4. Non-solder mask defined copper landing pad.
5. The flat side of wafers is oriented at the bottom.
6. is location of Pin 1P.
·
Dim.
Millimetersa
Inches
PAD DISTRIBUTION TABLE
Min.
Max.
Min.
Max.
P
Q
R
A
0.600
0.650
0.0236
0.0256
1
Drain
Gate
Source
2
Drain
Source
Source
A1
0.260
0.290
0.0102
0.0114
A2
0.340
0.360
0.0134
0.0142
b
0.370
0.410
0.0146
0.0161
D
1.920
2.000
0.0756
0.0787
E
2.320
2.400
0.0913
0.0945
e
0.750
0.850
0.0295
0.0335
S
0.370
0.400
0.0150
0.0157
S1
0.580
0.600
0.0228
0.0236
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72254.
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Document Number: 72254
S11-1383-Rev. D, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000