SiA810DJ-RC

SiA810DJ_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient Mosfet
Ambient Schottky
Foot
Case Mosfet
Case Schottky
RT1
12.1637
14.9494
N/A
5.7765
6.5467
RT2
25.6565
19.0021
N/A
3.7748
4.3575
RT3
27.9663
20.0917
N/A
2.3175
2.8124
RT4
44.2135
55.9568
N/A
4.1312
4.7834
Thermal Capacitance (Joules/°C)
Junction to
Ambient Mosfet
Ambient Schottky
Foot
Case Mosfet
Case Schottky
CT1
90.4043 u
44.0775 u
N/A
534.8325 u
389.0875 u
CT2
1.8276 m
1.4083 m
N/A
89.9295 u
49.6774 u
CT3
26.2170 m
32.5737 m
N/A
148.7090 u
51.6465 u
CT4
1.0557
1.4670
N/A
411.8908 u
227.5644 u
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 70473
Revision: 03-May-07
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SiA810DJ_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient Mosfet
Ambient Schottky
Foot
Case Mosfet
Case Schottky
RF1
16.6834
15.8821
N/A
8.7745
9.2052
RF2
31.9645
21.5723
N/A
3.8432
5.5541
RF3
21.7849
16.8410
N/A
1.7466
2.1892
RF4
39.5672
55.7046
N/A
1.6357
1.5515
Case Mosfet
Case Schottky
23.0729 u
Thermal Capacitance (Joules/°C)
Junction to
Ambient Mosfet
Ambient Schottky
Foot
CF1
112.9573 u
42.3590 u
N/A
45.4623 u
CF2
2.6995 m
1.4701 m
N/A
196.9465 u
93.1985 u
CF3
63.9442 m
41.2699 m
N/A
383.0379 u
538.7457 u
CF4
1.2074
1.3812
N/A
98.0442 u
942.4790 u
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 70473
Revision: 03-May-07
SiA810DJ_RC
Vishay Siliconix
Document Number: 70473
Revision: 03-May-07
www.vishay.com
3
SiA810DJ_RC
Vishay Siliconix
www.vishay.com
4
Document Number: 70473
Revision: 03-May-07