SiA466EDJ Datasheet

SiA466EDJ
www.vishay.com
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω) MAX.
ID (A) a
0.0095 at VGS = 10 V
25
0.0111 at VGS = 6 V
25
0.0130 at VGS = 4.5 V
25
VDS (V)
20
Qg (TYP.)
6.3 nC
S
4
05
2.
m
m
m
3
G
Bottom View
5m
2.0
Top View
- Small footprint area
• Typical ESD protection: 2500 V (HBM)
• 100 % Rg Tested
D
6
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
S
1
• Thermally enhanced PowerPAK® SC-70 package
- Low on-resistance
PowerPAK® SC-70-6L Single
D
5
• TrenchFET® power MOSFET
1
D
2
D
D
• For smart phones and mobile
computing
- DC/DC converters
G
- Power management
- Load switches
Marking Code: AW
Ordering Information:
SiA466EDJ-T1-GE3 (lead (Pb)-free and halogen-free)
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 20
TC = 70 °C
TA = 25 °C
25 a
ID
15.1 b, c
12.1 b, c
TA = 70 °C
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
IDM
TC = 25 °C
TA = 25 °C
16
IS
2.9 b, c
TC = 25 °C
19.2
12.3
PD
W
3.5 b, c
2.2 b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
50
TC = 70 °C
TA = 25 °C
V
25 a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) a
UNIT
TJ, Tstg
-55 to 150
Soldering Recommendations (Peak Temperature) d, e
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SYMBOL
b, f
Maximum Junction-to-Case (Drain)
TYPICAL
MAXIMUM
t≤5s
RthJA
28
36
Steady State
RthJC
5.3
6.5
UNIT
°C/W
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S14-1065-Rev. A, 19-May-14
Document Number: 62955
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA466EDJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
20
-
-
-
V
17
-
-
-4.7
-
VDS = VGS, ID = 250 μA
1
-
2.5
VDS = 0 V, VGS = ± 20 V
-
-
± 30
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current a
Drain-Source On-State Resistance a
Forward Transconductance a
ID = 250 μA
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS = 0 V, VGS = ± 4.5 V
-
-
±1
VDS = 20 V, VGS = 0 V
-
-
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS ≤ 5 V, VGS = 4.5 V
20
-
-
VGS = 10 V, ID = 9 A
-
0.0079
0.0095
VGS = 6 V, ID = 5 A
-
0.0095
0.0111
VGS = 4.5 V, ID = 5 A
-
0.0104
0.0130
VDS = 10 V, ID = 15 A
-
38
-
-
620
-
VDS = 1 V, VGS = 0 V, f = 1 MHz
-
230
-
-
135
-
VDS = 10 V, VGS = 10 V, ID = 15 A
-
13
20
mV/°C
V
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-
6.3
10
VDS = 10 V, VGS = 4.5 V, ID = 15 A
-
1.6
-
-
2.1
-
f = 1 MHz
0.2
0.9
1.8
-
5
10
-
22
33
20
td(on)
VDD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tr
td(off)
-
12
tf
-
6
12
td(on)
-
15
23
VDD = 10 V, RL = 1 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tr
td(off)
tf
pF
nC
Ω
ns
-
73
110
-
12
20
-
20
30
-
-
16
-
-
50
-
0.8
1.2
V
-
22
33
ns
-
10
15
nC
-
11
-
-
11
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
TC = 25 °C
IS = 10 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited
A
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-1065-Rev. A, 19-May-14
Document Number: 62955
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA466EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-1
0.010
TJ = 25 °C
10-2
10-3
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
0.008
0.006
0.004
10-4
10-5
TJ = 150 °C
10-6
10-7
TJ = 25 °C
0.002
10-8
10-9
0.000
0
6
12
18
24
0
5
10
15
20
25
VGS - Gate-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate Source Voltage vs. Gate Current
Gate Source Voltage vs. Gate Current
5
50
VGS = 10 V thru 4 V
4
40
ID - Drain Current (A)
ID - Drain Current (A)
TC = 25 °C
VGS = 3 V
30
20
3
2
TC = 125 °C
1
10
TC = - 55 °C
VGS = 2 V
0
0
0
0.5
1
1.5
0
2
VDS - Drain-to-Source Voltage (V)
1.2
1.8
2.4
3
VGS - Gate- to - Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.015
850
0.013
680
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.6
VGS = 4.5 V
0.011
VGS = 6 V
0.009
VGS = 10 V
Ciss
510
340
Coss
Crss
170
0.007
0
0.005
0
10
20
30
40
50
0
5
10
15
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
S14-1065-Rev. A, 19-May-14
20
Document Number: 62955
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA466EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.65
10
VDS = 5 V
VGS = 10 V/9 A; 6 V/5 A; 4.5 V/5 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 15 A
8
VDS = 10 V
6
4
VDS = 16 V
2
1.4
1.15
0.9
0.65
0
0
3
6
9
12
- 50
15
- 25
0
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.025
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID =9 A
TJ = 150 °C
10
TJ = 25 °C
1
0.020
0.015
TJ = 125 °C
TJ = 25 °C
0.010
0.005
0.1
0.000
0.0
0.3
0.6
0.9
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
1.75
ID = 250 μA
25
1.5
Power (W)
VGS(th) (V)
20
1.25
15
10
1
5
0.75
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
S14-1065-Rev. A, 19-May-14
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Single Pulse Power, Junction-to-Ambient
Document Number: 62955
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA466EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
40
Limited by IDM
Limited by RDS(on)*
100 μs
30
ID - Drain Current (A)
ID - Drain Current (A)
10
1 ms
1
10 ms
100 ms
10s, 1 s
0.1
20
10
DC,
TA = 25 °C
BVDSS Limited
0.01
0
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
0
25
Safe Operating Area, Junction-to-Ambient
75
100
125
150
Current Derating*
24
2.0
18
1.5
Power (W)
Power (W)
50
TC - Case Temperature (°C)
12
6
1.0
0.5
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
TA - Ambient Temperature (°C)
150
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-1065-Rev. A, 19-May-14
Document Number: 62955
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA466EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 80 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
t1
t2
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.0001
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62955.
S14-1065-Rev. A, 19-May-14
Document Number: 62955
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
www.vishay.com
11
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Revision: 02-Oct-12
1
Document Number: 91000