A 36 W Ballast Application with the NCP5181

AND8244
A 36 W Ballast Application
with the NCP5181
Prepared by: Thierry Sutto
ON Semiconductor
http://onsemi.com
Detailed Operation
This document describes how the NCP5181 driver can be
implemented in a ballast application. The scope of this
application note is to highlight the NCP5181 driver and not
to explain or detail how to build an electronic ballast.
The NCP5181 is a high voltage power MOSFET driver
providing two outputs for direct drive of two N-channel
power MOSFETs arranged in a half-bridge (or any other
high-side + low-side topology) configuration.
It uses the bootstrap technique to ensure a proper drive of
the high-side power switch. The driver works with two
independent inputs to accommodate with any topology
(including half-bridge, asymmetrical half-bridge, active
clamp and full-bridge).
The lamp ballast is powered via a half bridge
configuration. The two power MOSFETs are driven with the
NCP5181 driver. The driver is supplied by the VCC rail, and
the high side driver is supplied by the bootstrap diode: when
the low side power MOSFET (Q2) is switched ON, the
BRIDGE pin is pulled down to the ground, thus the capacitor
connected between the BRIDGE pin and VBOOT pin is
refuelled via the diode D3 and the resistor R5 connected to
VCC. When Q2 is switched OFF, the bootstrap capacitor C6
supplies the high side driver with a voltage equal to VCC
level minus D3 forward voltage diode. Given the NCP5181
architecture, it is up to the designer to generate the right input
signal polarity. This includes a dead time to avoid a short
circuit between the high and low side power MOSFET.
The 555 timer generates only one signal for the driver, the
second one, in opposite phase is built by inserting an NPN
transistor (Q4) for inverting the signal. Afterwards, the dead
time is built with R2, D2 and C13 (typically 260 ns, See
Figure 1).
Demo Board Specification
•
•
•
•
•
Input range : 85 - 145 Vac OR 184 - 265 Vac
Ballast Output power : 36 W (type PL-L 36 W)
Pre-heating current : 295 mA
Pre-heating time : 1 second
Nominal current : 414 mA
NOTE: BEFORE PLUGGING
IN THE DEMO BOARD, MAKE
SURE THE JUMPER IS IN
THE CORRECT POSITION: IF
J2 IS USED, THEN Vin MUST
BE LOWER THAN 145 Vac.
© Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 1
1
Publication Order Number:
AND8244/D
AND8244
Dead time 260 ns
DRV_HI
(5 V/div)
DRV_LO
(5 V/div)
Time
(400 ns/div)
Figure 1. Dead Time Between the High and Low Side Driver
IN_HI
(10 V/div)
DRV_HI
(10 V/div)
IN_LO
(10 V/div)
DRV_LO
(10 V/div)
Time
(4 μs/div)
Figure 2. Input Output Timing Diagram
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2
AND8244
Tube
Voltage
(100 V/div)
Tube
current
(0.5 V/div)
Tube
Power
(50 W/div)
Tube average
power = 32 W
Figure 3. Tube signals
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3
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C16
NC
R10
33k
Figure 4. Demo Board Schematic
5
2
4
R15
22k
5V1
D4
CVolt
TRIG
R
4
Q
GND
THR
R16
68k
27k
R12
6
7
3
GND
GND
VCC
R13
15k
VCC
GND
C12
18pF
GND
Q4
BC547B
C13
18pF
R3
82k
2W
GND
1N4148
D2
R2 82k
C1
47 uF
400 V
SerieM Panasonic
C1
47 uF
400 V
SerieM Panasonic
C3
R1
220uF 12k
GND
D1
15V
1.3W
VCC
DF06
1
PT1
J2
US-jumper
3
DIS
C17
100 uF
U1
TLC555C
F1
T500 mA GND
C11
10nF
GND
Q3
BC547B
R11
47k
GND
C10
220pF
C9
220pF
VCC
CON2
1
2
8
VCC
GND
4
1
2
1
J1
2
3
2
1
5
1N4936
D5
U2
NCP5181
GND
IN_LO
IN_HI
VCC
D3
4
6
7
8
R5
10R
GND
D6
1N4936
C14
220pF/400V
DRV_LO
Bridge
DRV_HI
VBOOT
1N4936
C5
100nF
GND
C4
4.7uF
GND
GND
R4
82k
2W
GND
R14
390k
R9
10k
R7
10R
C6
R6 R8
100nF
10R 10k
GND
Q2
IRF840LC
1.4mH
L1
Q1
IRF840LC
6.8nF
1kV
C15
BALLAST
B1
GND
C8
220nF
400V
C7
220nF
400V
AND8244
AND8244
Figure 5. PCB Printout: Top and Bottom View
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5
AND8244
Bill of Material
Part Type
Designator
Manufacturer
Description
Connector
B1, J1
-
Connector
47 mF/400 V
C1,C2
Panasonic
M Series
220 pF
C10
Generic
Capacitor
10 nF
C11
Generic
Capacitor
18 pF
C12, C13
Generic
Capacitor
220 pF /400 V
C14
Generic
Capacitor
6.8 nF/1 kV
C15
Generic
Capacitor
NC
C16
-
Capacitor
100 mF
C17
Generic
Capacitor
220 mF
C3
Generic
Capacitor
4.7 mF/50 V
C4
Generic
Capacitor
100 nF
C5
Generic
Capacitor
100 nF
C6
Generic
Capacitor
220 nF/400 V
C7, C8
Generic
Capacitor
220 pF
C9
Generic
Capacitor
BZX85C15V
D1
Generic
15 V Zener diode
1N4148
D2
Generic
Signal diode
1N4936
D3, D5, D6
ON Semiconductor
Fast Recovery rectifier
BZX85C5V1
D4
Generic
5V1 Zener diode
T500 mA
F1
Generic
Fuse
US-jumper
J2
-
Jumper for US main supply only
1.4 mH
L1
VOGT
VOGT 53-044
DF06M
PT1
-
600V Diode Bridge
IRF840LC
Q1, Q2
IRF
Low Charge N-Channel MOSFET
BC547B
Q3, Q4
Generic
NPN transistor
12k
R1
Generic
Resistor
33k
R10
Generic
Resistor
47k
R11
Generic
Resistor
27k
R12
Generic
Resistor
15k
R13
Generic
Resistor
390k
R14
Generic
Resistor
22k
R15
Generic
Resistor
68k
R16
Generic
Resistor
82k
R2
Generic
Resistor
82k/2W
R3, R4
Generic
Resistor 2W power type
10R
R5, R6, R7
Generic
Resistor
10k
R8, R9
Generic
Resistor
TLC555C
U1
Texas Instrument
CMOS 555 timer
NCP5181
U2
ON Semiconductor
NCP5181
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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AND8240/D
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