A 36W Ballast Application with NCP5106B

AND8295/D
A 36W Ballast Application
with the NCP5106B
Prepared by: Thierry Sutto
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This document describes how the NCP5106B driver can
be implemented in a ballast application. The scope of this
application note is to highlight the NCP5106B driver and not
to explain or detailed how to build electronic ballast.
The NCP5106B is a high voltage power MOSFET driver
providing two outputs for direct drive of 2 N-channel power
MOSFETs arranged in a half-bridge configuration with a
cross conduction protection between the 2 channels.
It uses the bootstrap technique to insure a proper drive of
the High-side power switch. The driver works with 2
independent inputs to accommodate any topology
(including half-bridge, asymmetrical half-bridge, active
clamp and full-bridge).
NCP5106B driver. The driver is supplied by the VCC rail,
and the high side driver is supplied by the bootstrap diode:
when the low side power MOSFET (Q2) is switched ON, the
BRIDGE pin is pulled down to the ground, thus the capacitor
connected between BRIDGE pin and VBOOT pin is
refuelled via the diode D3 and the resistor R5 connected to
VCC. When Q2 is switched OFF the bootstrap capacitor C6
supplies the high side driver with a voltage equal to VCC
level minus the D3 forward voltage diode. Given the
NCP5106B architecture, it is up to the designer to generate
the right input signal polarity with the desired dead time.
Nevertheless the NCP5106B provides a cross conduction
protection with an internal fixed dead time. Thus in case of
overlap on the inputs signal, the both outputs driver will be
kept in low state, or a minimum of 100 ns dead time will be
applied between the both drivers.
The 555 timer generates only one signal for the driver, the
second one, in opposite phase is built by inserting a NPN
transistor (Q4) for inverting the signal. Afterwards the dead
time is built with R2, D2 and C13 (typically 400 ns, see
Figure 1).
Demo Board Specification
• Input range : 85 - 145 Vac or 184 - 265 Vac
• Ballast Output power : 36 W (type PL-L 36W)
♦Pre-Heating
current : 295 mA
time : 1 second
♦Nominal current : 414 mA
♦Pre-heating
BEFORE PLUGGING IN THE DEMO BOARD, MAKE
SURE THE JUMPER IS ON THE CORRECT POSITION:
IF J2 IS USED, THEN Vin MUST BE LOWER THAN
145 Vac.
Detailed Operation
The lamp ballast is powered via a half bridge
configuration. The 2 power MOSFETs are driven with the
Dead time
40 0 ns
DRV_HI
(5 V/div)
DRV_LO
(5 V/div)
Time
(400 ns/div)
Figure 1. Dead Time Between the High and Low Side Driver
© Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 0
1
Publication Order Number:
AND8295/D
AND8295/D
IN_HI
(10 V/div)
DRV_HI
(10 V/div)
IN_LO
(10 V/div)
DRV_LO
(10 V/div)
Time
(4 ms/div)
Figure 2. Input Output Timing Diagram
Tube
Voltage
(100
V /div)
Tube
current
(0.5 V/div)
Tube
Power
(50 W/div)
Tube
a verage
power = 32
Figure 3. Tube Signals
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2
W
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C16
NC
R10
33k
Figure 4. Demo Board Schematic
5
2
4
R15
22k
5V1
D4
CVolt
TRIG
R
4
Q
GND
THR
R16
68k
27k
R12
6
7
3
GND
GND
VCC
R13
15k
VCC
GND
C12
18pF
GND
Q4
BC547B
C13
18pF
R3
82k
2W
GND
1N4148
D2
R2 110k
C1
47 uF
400 V
SerieM Panasonic
C1
47 uF
400 V
SerieM Panasonic
C3
R1
220uF 22k
GND
D1
15V
1.3W
VCC
DF06
1
PT1
J2
US-jumper
3
DIS
C17
100 uF
U1
TLC555C
F1
T500 mA GND
C11
10nF
GND
Q3
BC547B
R11
47k
GND
C10
220pF
C9
220pF
VCC
CON2
1
2
8
VCC
GND
3
1
2
1
J1
2
4
3
2
1
1N4936
D5
U2
NCP5106B
GND
IN_LO
IN_HI
VCC
D3
5
6
7
8
R5
10R
GND
D6
1N4936
C14
220pF/400V
DRV_LO
BRIDGE
DRV_HI
VBOOT
1N4936
C5
100nF
GND
C4
4.7uF
GND
GND
R4
82k
2W
GND
R14
390k
R9
10k
R7
10R
C6
R6 R8
100nF
10R 10k
GND
Q2
IRF840LC
1.4mH
L1
Q1
IRF840LC
6.8nF
1kV
C15
BALLAST
B1
GND
C8
220nF
400V
C7
220nF
400V
AND8295/D
AND8295/D
Figure 5. PCB Printout: Top and Bottom View
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AND8295/D
BILL OF MATERIAL
Part Type
Designator
Manufacturer
Description
Connector
B1,J1
-
Connector
47mF/400V
C1,C2
Panasonic
M Series
220pF
C10
Generic
Capacitor
10nF
C11
Generic
Capacitor
18pF
C12,C13
Generic
Capacitor
220pF/400V
C14
Generic
Capacitor
6.8nF/1kV
C15
Generic
Capacitor
NC
C16
-
Capacitor
100mF
C17
Generic
Capacitor
220mF
C3
Generic
Capacitor
4.7uF/50V
C4
Generic
Capacitor
100nF
C5
Generic
Capacitor
100nF
C6
Generic
Capacitor
220nF/400V
C7,C8
Generic
Capacitor
220pF
C9
Generic
Capacitor
BZX85C15V
D1
Generic
15V Zener Diode
1N4148
D2
Generic
Signal Diode
1N4936
D3,D5,D6
ON Semiconductor
Fast Recovery rectifier
BZX85C5V1
D4
Generic
5V1 Zener Diode
T500mA
F1
Generic
Fuse
US-jumper
J2
-
Jumper for US Main Supply Only
1.4mH
L1
VOGT
VOGT 53-044
DF06M
PT1
-
600V Diode Bridge
IRF840LC
Q1,Q2
IRF
Low Charge N-Channel MOSFET
BC547B
Q3,Q4
Generic
NPN Transistor
22k
R1
Generic
Resistor
33k
R10
Generic
Resistor
47k
R11
Generic
Resistor
27k
R12
Generic
Resistor
15k
R13
Generic
Resistor
390k
R14
Generic
Resistor
22k
R15
Generic
Resistor
68k
R16
Generic
Resistor
110k
R2
Generic
Resistor
82k/2W
R3,R4
Generic
Resistor 2W Power Type
10R
R5,R6,R7
Generic
Resistor
10k
R8,R9
Generic
Resistor
TLC555C
U1
Texas Instrument
CMOS 555 timer
NCP5106B
U2
ON Semiconductor
NCP5106B
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5
AND8295/D
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