Complementary Silicon PowerTransistor

D44H Series (NPN),
D45H Series (PNP)
Preferred Devices
Complementary Silicon
Power Transistors
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
Features
• Low Collector−Emitter Saturation Voltage
http://onsemi.com
10 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS 60, 80 VOLTS
VCE(sat) = 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Pb−Free Packages are Available*
MARKING
DIAGRAM
4
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
D44H8, D45H8
D44H11, D45H11
Emitter Base Voltage
Symbol
Vdc
1
60
80
VEB
IC
Total Power Dissipation
@ TC = 25°C
@ TA = 25°C
PD
TO−220AB
CASE 221A−09
STYLE 1
Unit
VCEO
Collector Current
− Continuous
− Peak (Note 1)
Operating and Storage Junction
Temperature Range
Value
5.0
2
3
Vdc
D4xHyy = Device Code
x = 4 or 5
yy = 8 or 11
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
Adc
10
20
W
70
2.0
TJ, Tstg
°C
−55 to +150
ORDERING INFORMATION
Device
THERMAL CHARACTERISTICS
D4xHyyG
AYWW
Package
Shipping †
TO−220
50 Units/Rail
Symbol
Max
Unit
D44H8
Thermal Resistance, Junction−to−Case
RqJC
1.8
_C/W
D44H8G
50 Units/Rail
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
TO−220
(Pb−Free)
TO−220
50 Units/Rail
TL
275
_C
D44H11
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
TO−220
(Pb−Free)
50 Units/Rail
TO−220
50 Units/Rail
D45H8G
TO−220
(Pb−Free)
50 Units/Rail
D45H11
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
Characteristic
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.
D44H11G
D45H8
D45H11G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 9
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
D44H/D
D44H Series (NPN),
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
60
80
−
−
−
−
Vdc
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)
ICES
−
−
10
mA
Emitter Cutoff Current (VEB = 5.0 Vdc)
IEBO
−
−
10
mA
60
40
−
−
−
−
−
−
1.0
−
−
1.5
−
−
90
160
−
−
−
−
50
40
−
−
−
−
300
135
−
−
−
−
500
500
−
−
−
−
140
100
−
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0 Adc)
D44H8, D45H8
D44H11, D45H11
ON CHARACTERISTICS
DC Current Gain
(VCE = 1.0 Vdc, IC = 2.0 Adc)
(VCE = 1.0 Vdc, IC = 4.0 Adc)
hFE
Collector−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.4 Adc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 Adc)
VBE(sat)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1.0 MHz)
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
Ccb
D44H Series
D45H Series
pF
fT
D44H Series
D45H Series
MHz
SWITCHING TIMES
Delay and Rise Times
(IC = 5.0 Adc, IB1 = 0.5 Adc)
Storage Time
(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc)
Fall Time
(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc)
td + tr
D44H Series
D45H Series
ns
ts
D44H Series
D45H Series
ns
tf
D44H Series
D45H Series
http://onsemi.com
2
ns
D44H Series (NPN),
1000
1000
VCE = 1 V
25°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 1 V
125°C
−40°C
100
10
125°C
25°C
100
−40°C
10
0.01
0.1
1
10
0.01
10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. D44H11 DC Current Gain
Figure 2. D45H11 DC Current Gain
1000
VCE = 5 V
VCE = 5 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1
IC, COLLECTOR CURRENT (AMPS)
1000
25°C
125°C
−40°C
100
10
125°C
25°C
100
−40°C
10
0.01
0.1
1
10
0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. D44H11 DC Current Gain
Figure 4. D45H11 DC Current Gain
0.40
0.6
VCE(sat) @ IC/IB = 10
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
0.1
0.35
0.30
−40°C
0.25
0.20
25°C
0.15
125°C
0.10
0.05
0
VCE(sat) @ IC/IB = 10
0.5
0.4
−40°C
0.3
25°C
125°C
0.2
0.1
0
0.1
1
10
0.1
1
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. D44H11 ON−Voltage
Figure 6. D45H11 ON−Voltage
http://onsemi.com
3
10
D44H Series (NPN),
1.4
VBE(sat) @ IC/IB = 10
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
1.2
−40°C
1.0
0.8
125°C
0.6
25°C
0.4
0.2
0
−40°C
1.0
0.8
125°C
0.6
25°C
0.4
0.2
0
0.1
1
10
0.1
Figure 7. D44H11 ON−Voltage
Figure 8. D45H11 ON−Voltage
50
30
20
1.0 ms
100 ms
10
10 ms
TC ≤ 70° C
dc
DUTY CYCLE ≤ 50%
1.0
1.0 ms
0.5
0.3
0.2
D44H/45H8
D44H/45H10,11
TA TC
3.0 60
2.0 40
TC
2.0 3.0 5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
TA
1.0 20
0
0.1
1.0
0
0
20
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 9. Maximum Rated Forward Bias
Safe Operating Area
1.0
0.7
0.5
60
80
100
120
T, TEMPERATURE (°C)
140
160
Figure 10. Power Derating
0.2
0.2
0.1
0.1
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZqJC(t)
0.05
0.02
0.03
0.02
40
D = 0.5
0.3
0.07
0.05
10
IC, COLLECTOR CURRENT (AMPS)
100
5.0
3.0
2.0
1
IC, COLLECTOR CURRENT (AMPS)
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMPS)
VBE(sat) @ IC/IB = 10
1.2
0.01
SINGLE PULSE
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
Figure 11. Thermal Response
http://onsemi.com
4
20
50
100
200
500 1.0 k
D44H Series (NPN),
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
5
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
D44H/D
Similar pages