-12V, -5.3A, Single P-Channel, TSOP-6

NTGS3447P
Power MOSFET
-12 V, -5.3 A, Single P-Channel, TSOP-6
Features
•Low RDS(on) in TSOP-6 Package
•1.8 V Gate Rating
•This is a Pb-Free Device
http://onsemi.com
V(BR)DSS
Applications
•Battery Switch and Load Management Applications in Portable
Equipment
•High Side Load Switch
•PA Switch
-12 V
RDS(on) MAX
ID MAX
40 mW @ -4.5 V
-4.7 A
53 mW @ -2.5 V
-4.1 A
72 mW @ -1.8 V
-2.0 A
P-Channel
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
VDSS
-12
V
Gate-to-Source Voltage
VGS
$8
V
ID
-4.7
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
-3.4
tv5s
TA = 25°C
-5.3
Steady
State
TA = 25°C
PD
1.25
TA = 25°C
ID
-3.4
tv5s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Steady
State
1 2 5 6
3
4
W
MARKING
DIAGRAM
1.6
TA = 85°C
TA = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
A
TSOP-6
CASE 318G
STYLE 1
-2.5
PD
0.7
W
IDM
-19
A
TJ,
TSTG
-55 to
150
°C
TL
260
°C
1
SE MG
G
1
SE
= Device Code
M
= Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 5 4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size.
1
2
3
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping†
NTGS3447PT1G
TSOP-6
(Pb-Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 0
1
Publication Order Number:
NTGS3447P/D
NTGS3447P
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction-to-Ambient – Steady State (Note 3)
Parameter
RqJA
100
Junction-to-Ambient – t v 5 s (Note 3)
RqJA
78
Junction-to-Ambient – Minimum Pad (Note 4)
RqJA
188
Unit
°C/W
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = -250 mA
-12
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = -12 V
-1.0
TJ = 85°C
-5.0
IGSS
VDS = 0 V, VGS = ±8 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = -250 mA
Drain-to-Source On Resistance
RDS(on)
Gate-to-Source Leakage Current
V
TJ = 25°C
mA
$0.1
mA
-1.0
V
mW
ON CHARACTERISTICS (Note 5)
Forward Transconductance
gFS
-0.45
VGS = -4.5 V, ID = -4.7 A
30
40
VGS = -2.5 V, ID = -4.1 A
40
53
VGS = -1.8 V, ID = -2.0 A
53
72
VDS = -5 V, ID = -4.7 A
12
S
1053
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
129
Total Gate Charge
QG(TOT)
10.4
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
VGS = 0 V, f = 1 MHz, VDS = -6 V
VGS = -4.5 V, VDS = -6 V;
ID = -4.7 A
254
15
nC
11
ns
1.0
1.7
0.4
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
7
tr
VGS = -4.5 V, VDS = -6 V,
ID = -1.0 A, RG = 6.0 W
td(OFF)
tf
14
22
78
117
47
71
-0.7
-1.2
V
33
66
ns
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
VGS = 0 V,
IS = -1.7 A
TJ = 25°C
VGS = 0 V, dISD/dt = 100 A/ms,
IS = -1.7 A
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
2
NTGS3447P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
20
VGS = -4.5 V
TJ = 25°C
VDS = 5 V
-ID, DRAIN CURRENT (AMPS)
-ID, DRAIN CURRENT (AMPS)
20
-2.5 V
16
-2 V
12
-1.8 V
8
-1.5 V
4
1
3
4
5
TJ = 125°C
0.10
0.08
0.06
0.04
0.02
0.00
2
2.5
1.5
2
2.5
3
3.5
4
4.5
5
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0.10
TJ = 25°C
0.09
-1.8 V
-2 V
0.08
0.07
0.06
VGS = -2.5 V
0.05
0.04
0.03
VGS = -4.5 V
0.02
0.01
0.00
0
4
8
12
16
20
-ID, DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
1.5
1600
ID = -4.7 A
VGS = -4.5 V
1400
C, CAPACITANCE (pF)
RDS(on), DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
1.5
Figure 2. Transfer Characteristics
ID = -4.7 A
TJ = 25°C
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
1
Figure 1. On-Region Characteristics
0.12
1.4
TJ = -55°C
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0.14
1
TJ = 25°C
5
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
2
10
0
0.5
0
0
15
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
1200
1000
800
Coss
600
400
200
Crss
0
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (°C)
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Capacitance Variation
http://onsemi.com
3
12
NTGS3447P
12
QT
10
4
VGS
3
VDS
2
QGS
8
6
QGD
4
VDS = -6.0 V
ID = -4.7 A
TJ = 25°C
1
0
2
0
0
2
4
6
8
20
-IS, SOURCE CURRENT (AMPS)
5
-V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-V GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 0 V
10
1.0
0.0
10
TJ = 25°C
TJ = 150°C
0.2
0.6
1.0
0.4
0.8
1.2
-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
0.8
60
ID = -250 mA
0.7
POWER (WATTS)
50
0.5
0.4
0.3
0.2
-50
40
30
20
10
-25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
SINGLE PULSE TIME (s)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Maximum Power
Dissipation
100
-ID, DRAIN CURRENT (A)
-VGS(th) (V)
0.6
100 ms
10
1 ms
10 ms
1
VGS = 8.0 V
SINGLE PULSE
0.1 TC = 25°C
dc
RDS(on) LIMIT
Thermal Limit
Package Limit
0.01
0.1
1
10
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
100
1000
R(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE NORMALIZED (°C/W)
NTGS3447P
1
50% Duty Cycle
20%
0.1
10%
5%
P(pk)
2%
1%
Test Type = 1 sq in 2 oz
RqJA = 1 sq in 2 oz
0.01
t1
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (s)
Figure 12. FET Thermal Response
http://onsemi.com
5
1
10
100
1000
NTGS3447P
PACKAGE DIMENSIONS
TSOP-6
CASE 318G-02
ISSUE S
D
6
5
4
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
E
HE
1
b
e
q
c
A
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
DIM
A
A1
b
c
D
E
e
L
HE
q
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
-
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
-
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81-3-5773-3850
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTGS3447P/D