-20 V, -3.5 A, Single P-Channel, TSOP-6

NTGS3441B
Power MOSFET
-20 V, -3.5 A, Single P-Channel, TSOP-6
Features
•Low RDS(on) in TSOP-6 Package
•2.5 V Gate Rating
•This is a Pb-Free Device
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Applications
•Battery Switch and Load Management Applications in Portable
Equipment
•High Side Load Switch
•Portable Devices like Games and Cell Phones
V(BR)DSS
RDS(on) MAX
ID MAX
90 mW @ -4.5 V
-3.0 A
130 mW @ -2.5 V
-2.4 A
-20 V
P-Channel
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
VDSS
-20
V
Gate-to-Source Voltage
VGS
$8
V
ID
-3.0
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
tv5s
TA = 25°C
Steady
State
TA = 25°C
PD
1.1
TA = 25°C
ID
-2.2
TA = 70°C
Steady
State
Power Dissipation
(Note 2)
Pulsed Drain Current
3
-2.4
-3.5
tv5s
Continuous Drain
Current (Note 2)
1 2 5 6
4
W
MARKING
DIAGRAM
1.6
TA = 70°C
TA = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
A
TSOP-6
CASE 318G
STYLE 1
-1.8
PD
0.7
W
IDM
-12
A
TJ,
TSTG
-55 to
150
°C
TL
260
°C
1
SF MG
G
1
SF
= Device Code
M
= Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 5 4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size.
(Cu area = 0.0775 in sq).
1
2
3
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping†
NTGS3441BT1G
TSOP-6
(Pb-Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 0
1
Publication Order Number:
NTGS3441B/D
NTGS3441B
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction-to-Ambient – Steady State (Note 3)
Parameter
RqJA
110
Junction-to-Ambient – t v 5 s (Note 3)
RqJA
80
Junction-to-Ambient – Minimum Pad (Note 4)
RqJA
190
Unit
°C/W
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = -250 mA
-20
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = -20 V
-1.0
TJ = 70°C
-5.0
IGSS
VDS = 0 V, VGS = ±8 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = -250 mA
Drain-to-Source On Resistance
RDS(on)
Gate-to-Source Leakage Current
V
TJ = 25°C
mA
$0.1
mA
-0.9
V
mW
ON CHARACTERISTICS (Note 5)
Forward Transconductance
VGS = -4.5 V, ID = -3.0 A
gFS
-0.4
59
90
VGS = -2.5 V, ID = -2.4 A
79
130
VDS = -10 V, ID = -3.0 A
5.8
S
630
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
VGS = 0 V, f = 1 MHz, VDS = -10 V
93
CRSS
49
Total Gate Charge
QG(TOT)
6.1
Threshold Gate Charge
QG(TH)
0.5
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
VGS = -4.5 V, VDS = -10 V;
ID = -3.0 A
9.0
nC
ns
1.0
1.4
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
8.0
13
tr
6.0
10
40
64
33
53
-0.8
-1.2
V
12
24
ns
VGS = -4.5 V, VDS = -10 V,
ID = -1.0 A, RG = 6.0 W
td(OFF)
tf
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
VGS = 0 V,
IS = -1.6 A
TJ = 25°C
VGS = 0 V, dISD/dt = 100 A/ms,
IS = -1.6 A
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
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2
NTGS3441B
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = -4.5 V
20
-3.5 V
TJ = 25°C
-4 V
16
VDS = -5 V
-ID, DRAIN CURRENT (AMPS)
-ID, DRAIN CURRENT (AMPS)
20
-3 V
12
-2.5 V
8
-2 V
4
-1.5 V
1
3
4
5
TJ = 125°C
1
2
1.5
3
2.5
Figure 2. Transfer Characteristics
0.24
0.18
0.12
0.06
0.00
1.5
2.5
2
3
3.5
4
4.5
5
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0.30
TJ = 25°C
0.24
0.18
0.12
VGS = -2.5 V
0.06
VGS = -4.5 V
0.00
4
0
8
12
16
20
-ID, DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
1.5
1000
ID = -3 A
VGS = -4.5 V
C, CAPACITANCE (pF)
RDS(on), DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
TJ = -55°C
Figure 1. On-Region Characteristics
ID = -3 A
TJ = 25°C
1.4
TJ = 25°C
4
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0.30
1
8
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
2
12
0
0.5
0
0
16
1.3
1.2
1.1
1.0
0.9
VGS = 0 V
TJ = 25°C
f = 1 MHz
800
Ciss
600
400
Coss
200
0.8
0.7
-50
Crss
0
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
20
NTGS3441B
12
QT
6
10
-VGS
-VDS
5
8
4
6
3
QGS
2
4
QGD
VDS = -10 V
ID = -3 A
TJ = 25°C
1
2
0
0
0
2
6
4
20
-I S, SOURCE CURRENT (AMPS)
7
-V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-V GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 0 V
10
1.0
0.0
8
0.2
Figure 7. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
0.8
0.6
1.0
1.4
1.2
Figure 8. Diode Forward Voltage vs. Current
60
ID = -250 mA
0.8
0.4
-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
QG, TOTAL GATE CHARGE (nC)
0.9
TJ = 25°C
TJ = 150°C
50
POWER (WATTS)
0.7
0.5
0.4
0.3
40
30
20
0.2
10
0.1
0.0
-50
-25
0
25
75
50
100
125
0
0.001
150
0.1
0.01
1
10
100
SINGLE PULSE TIME (s)
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Threshold Voltage
100
-ID, DRAIN CURRENT (A)
-VGS(th) (V)
0.6
10
100 ms
1 ms
1
10 ms
VGS = -8.0 V
SINGLE PULSE
0.1 TC = 25°C
RDS(on) LIMIT
dc
Thermal Limit
Package Limit
0.01
0.1
1
10
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
1000
R(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE NORMALIZED (°C/W)
NTGS3441B
1
Duty Cycle = 0.5
0.2
0.1
P(pk)
0.1
0.05
0.02
0.01
0.01
0.0001
Test Type = 1 sq in 2 oz
RqJA = 1 sq in 2 oz
t1
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.001
0.01
0.1
PULSE TIME (s)
1
Figure 12. FET Thermal Response
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5
10
100
1000
NTGS3441B
PACKAGE DIMENSIONS
TSOP-6
CASE 318G-02
ISSUE S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
5
4
2
3
E
HE
1
b
e
q
c
A
0.05 (0.002)
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
-
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
-
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
DIM
A
A1
b
c
D
E
e
L
HE
q
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NTGS3441B/D
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