-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET

NTHD3133PF
Power MOSFET and
Schottky Diode
-20 V, FETKYt, P-Channel, -4.4 A, with
3.7 A Schottky Barrier Diode, ChipFETt
http://onsemi.com
Features
•Leadless SMD Package Featuring a MOSFET and Schottky Diode
•40% Smaller than TSOP-6 Package
•Leadless SMD Package Provides Great Thermal Characteristics
•Independent Pinout to each Device to Ease Circuit Design
•Trench P-Channel for Low On Resistance
•Ultra Low VF Schottky
•These are Pb-Free Devices
MOSFET
V(BR)DSS
RDS(on) TYP
ID MAX
64 mW @ -4.5 V
-20 V
-4.4 A
85 mW @ -2.5 V
SCHOTTKY DIODE
VR MAX
VF TYP
IF MAX
20 V
0.35 V
3.7 A
Applications
•Li-Ion Battery Charging
•High Side DC-DC Conversion Circuits
•High Side Drive for Small Brushless DC Motors
•Power Management in Portable, Battery Powered Products
A
S
G
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
TJ = 25°C
t≤5s
TJ = 25°C
Power Dissipation
(Note 1)
Steady
State
Symbol
Value
Units
VDSS
-20
V
VGS
±8.0
V
ID
-3.2
A
TJ = 85°C
Source Current (Body Diode)
-4.4
1
PD
1.1
IDM
-13
A
TJ, TSTG
-55 to
150
°C
PIN
CONNECTIONS
A
A
IS
W
TL
2.5
°C
260
1
8
2
7
A
S
G
DC Blocking Voltage
1
C
2
D
3
D
4
8
7
6
3
(TJ = 25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
C
6
SCHOTTKY DIODE MAXIMUM RATINGS
Parameter
MARKING
DIAGRAM
DA M
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Symbol
Value
Units
VRRM
20
V
VR
20
V
IF
2.2
V
3.7
A
4
5
5
DA = Specific Device Code
M = Month Code
G
= Pb-Free Package
TJ = 25°C
t≤5s
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
© Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 0
ChipFET
CASE 1206A
STYLE 3
2.1
tp = 10 ms
Steady
State
8
TJ = 25°C
Operating Junction and Storage Temperature
Average Rectified
Forward Current
C
Schottky Diode
-2.3
t≤5s
Pulsed Drain Current
D
P-Channel MOSFET
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTHD3133PF/D
NTHD3133PF
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Units
Junction-to-Ambient – Steady State (Note 2)
RqJA
113
°C/W
Junction-to-Ambient – t ≤ 10 s (Note 2)
RqJA
60
°C/W
2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = -250 mA
-20
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Units
OFF CHARACTERISTICS
V
-15
Zero Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
VDS = 0 V, VGS = ±8.0 V
VGS(TH)
VGS = VDS, ID = -250 mA
VDS = -16 V,
VGS = 0 V
TJ = 25°C
mV/°C
-1.0
TJ = 125°C
mA
-5.0
±100
nA
-1.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain-to-Source On-Resistance
-0.45
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
2.7
mV/°C
mW
VGS = -4.5, ID = -3.2 A
64
80
VGS = -2.5, ID = -2.2 A
85
110
VGS = -1.8, ID = -1.0 A
120
170
VDS = -10 V, ID = -2.9 A
8.0
S
680
pF
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = -10 V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
100
70
Total Gate Charge
QG(TOT)
7.4
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
2.5
td(ON)
5.8
nC
0.6
VGS = -4.5 V, VDS = -10 V,
ID = -3.2 A
1.4
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
ns
11.7
VGS = -4.5 V, VDD = -10 V,
ID = -3.2 A, RG = 2.4 W
16
tf
12.4
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = -2.5 A
TJ = 25°C
-0.8
-1.2
V
ns
13.5
9.5
VGS = 0 V, IS = -1.0 A ,
dIS/dt = 100 A/ms
4.0
QRR
6.5
nC
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Max
Units
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
0.31
V
IF = 1.0 A
0.365
Maximum Instantaneous
Reverse Current
IR
VR = 10 V
0.75
VR = 20 V
2.5
Halfwave, Single Pulse 60 Hz
23
Non-Repetitive Peak Surge Current
IFSM
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
Min
Typ
mA
A
NTHD3133PF
TYPICAL P-CHANNEL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
8
7
-2.4 V
6
-2.2 V
5
4
-2 V
3
2
-1.8 V
1
-1.6 V
-1.4 V
0
1
0
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
9
TJ = 25°C
-ID, DRAIN CURRENT (AMPS)
VGS = -5 V to -3.6 V
VGS = -3 V
-2.6 V
2
3
4
5
6
7
7
6
5
4
3
TC = -55°C
2
1
25°C
100°C
8
9
10
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1
3
0.5
1.5
2
2.5
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.2
0
ID = -3.2 A
TJ = 25°C
0.175
3.5
0.2
TJ = 25°C
0.175
0.15
0.15
VGS = -2.5 V
0.125
0.125
0.1
0.1
VGS = -4.5 V
0.075
0.075
0.05
1
3
5
2
4
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
6
0.05
2
4
6
5
7
8
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
1000
1.4
ID = -3.2 A
VGS = -4.5 V
VGS = 0 V
-IDSS, LEAKAGE (A)
1.3
3
-ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
RDS(on), DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
VDS ≥ -10 V
8
0
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
-ID, DRAIN CURRENT (AMPS)
9
1.2
1.1
1
0.9
TJ = 100°C
100
0.8
0.7
-50
10
-25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
-TJ, JUNCTION TEMPERATURE (°C)
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
http://onsemi.com
3
20
NTHD3133PF
TYPICAL P-CHANNEL PERFORMANCE CURVES
VGS = 0 V
TJ = 25°C
CISS
1200
C, CAPACITANCE (pF)
-VGS, GATE-TO-SOURCE VOLTAGE (V)
1500
900
VDS = 0 V
600
CRSS
300
COSS
0
5
-VGS
0
-VDS
5
10
QT
6
QGS
2
QGD
4
2
1
ID = -3.2 A
TJ = 25°C
0
2
4
6
0
8
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
5
-IS, SOURCE CURRENT (AMPS)
VDS = -10 V
ID = -3.2 A
VGS = -4.5 V
td(off)
100
t, TIME (ns)
-VGS
3
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
tf
tr
td(on)
10
1
1
8
4 -V
DS
0
20
15
10
5
-VDS, DRAIN-TO-SOURCE VOLTAGE (V)
(TJ = 25°C unless otherwise noted)
10
100
VGS = 0 V
TJ = 25°C
4
3
2
1
0
0.3
0.6
0.9
RG, GATE RESISTANCE (OHMS)
-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
http://onsemi.com
4
1.2
NTHD3133PF
TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
TJ = 150°C
1
TJ = 25°C
TJ = -55°C
0.1
0.00
0.40
0.20
0.60
TJ = 150°C
1
TJ = 25°C
0.1
0.00
0.80
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100E-3
IR, REVERSE CURRENT (AMPS)
0.60
0.80
Figure 12. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 11. Typical Forward Voltage
100E-3
TJ = 150°C
10E-3
TJ = 100°C
1E-3
100E-6
TJ = 150°C
10E-3
TJ = 100°C
1E-3
100E-6
TJ = 25°C
10E-6
TJ = 25°C
10E-6
20
10
VR, REVERSE VOLTAGE (VOLTS)
0
PFO, AVERAGE POWER DISSIPATION (WATTS)
freq = 20 kHz
dc
2.5
square wave
2
Ipk/Io = p
1.5
Ipk/Io = 5
1
Ipk/Io = 10
0.5
Ipk/Io = 20
0
25
45
65
85
105
125
20
Figure 14. Maximum Reverse Current
3.5
3
10
VR, REVERSE VOLTAGE (VOLTS)
0
Figure 13. Typical Reverse Current
IO, AVERAGE FORWARD CURRENT (AMPS)
0.40
0.20
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
145
165
TL, LEAD TEMPERATURE (°C)
1.4
Ipk/Io = p
1.2
square wave
dc
Ipk/Io = 5
1
Ipk/Io = 10
0.8
Ipk/Io = 20
0.6
0.4
0.2
0
0
Figure 15. Current Derating
0.5
1
1.5
2
2.5
3
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 16. Forward Power Dissipation
http://onsemi.com
5
3.5
NTHD3133PF
DEVICE ORDERING INFORMATION
Package
Shipping†
NTHD3133PFT1G
ChipFET
(Pb-Free)
3000 / Tape & Reel
NTHD3133PFT3G
ChipFET
(Pb-Free)
10000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
NTHD3133PF
PACKAGE DIMENSIONS
ChipFET
CASE 1206A-03
ISSUE G
D
8
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
q
6
L
5
HE
5
6
7
8
4
3
2
1
E
1
2
3
e1
4
b
c
e
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
A
A
A
S
G
D
D
C
C
DIM
A
b
c
D
E
e
e1
L
HE
q
MILLIMETERS
NOM
MAX
1.05
1.10
0.30
0.35
0.15
0.20
3.05
3.10
1.65
1.70
0.65 BSC
0.55 BSC
0.28
0.35
0.42
1.80
1.90
2.00
5° NOM
MIN
1.00
0.25
0.10
2.95
1.55
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.011
0.014
0.071
0.075
5° NOM
MIN
0.039
0.010
0.004
0.116
0.061
MAX
0.043
0.014
0.008
0.122
0.067
0.017
0.079
0.05 (0.002)
SOLDERING FOOTPRINT*
2.032
0.08
0.711
0.028
1.092
0.043
0.178
0.007
0.457
0.018
0.254
0.010
0.66
0.026
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ChipFET is a trademark of Vishay Siliconix.
FETKY is a registered trademark of International Rectifier Corporation.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81-3-5773-3850
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTDH3133PF/D
Similar pages