Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D891
BOTTOM VIEW
BZX884 series
Voltage regulator diodes
Product data sheet
Supersedes data of 2003 May 15
2004 Mar 26
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX884 series
FEATURES
DESCRIPTION
• Two tolerance series: ±2% and ±5%
Low-power voltage regulator diodes encapsulated in
SOD882 leadless ultra small plastic packages.
• Working voltage range: nominal 2.4 V to 75 V
(E24 range)
• Leadless ultra small plastic package
(1 mm × 0.6 mm × 0.5 mm)
• Boardspace 1.17 mm2 (approximately 10% of SOT23)
handbook, halfpage
• Power dissipation comparable to SOT23.
APPLICATIONS
Bottom view
MAM472
• General regulation functions
• ESD ultra high-speed switching
The marking bar indicates the cathode.
• High frequency applications
• Mobile communication, digital (still) cameras, PDAs and
PCMCIA cards.
Fig.1
Simplified outline (SOD882) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX884-B2V4 to BZX884-B75
BZX884-B2V4
A1
BZX884-B6V2
AB
BZX884-B16
C1
BZX884-B43
CB
BZX884-B2V7
A2
BZX884-B6V8
AC
BZX884-B18
C2
BZX884-B47
CC
BZX884-B3V0
A3
BZX884-B7V5
AD
BZX884-B20
C3
BZX884-B51
CD
BZX884-B3V3
A4
BZX884-B8V2
AE
BZX884-B22
C4
BZX884-B56
CE
BZX884-B3V6
A5
BZX884-B9V1
AF
BZX884-B24
C5
BZX884-B62
CF
BZX884-B3V9
A6
BZX884-B10
AG
BZX884-B27
C6
BZX884-B68
CG
BZX884-B4V3
A7
BZX884-B11
AH
BZX884-B30
C7
BZX884-B75
CH
BZX884-B4V7
A8
BZX884-B12
AJ
BZX884-B33
C8
BZX884-B5V1
A9
BZX884-B13
AK
BZX884-B36
C9
BZX884-B5V6
AA
BZX884-B15
AL
BZX884-B39
CA
Marking codes for BZX884-C2V4 to BZX884-C75
BZX884-C2V4
B1
BZX884-C6V2
BB
BZX884-C16
D1
BZX884-C43
DB
BZX884-C2V7
B2
BZX884-C6V8
BC
BZX884-C18
D2
BZX884-C47
DC
BZX884-C3V0
B3
BZX884-C7V5
BD
BZX884-C20
D3
BZX884-C51
DD
BZX884-C3V3
B4
BZX884-C8V2
BE
BZX884-C22
D4
BZX884-C56
DE
BZX884-C3V6
B5
BZX884-C9V1
BF
BZX884-C24
D5
BZX884-C62
DF
BZX884-C3V9
B6
BZX884-C10
BG
BZX884-C27
D6
BZX884-C68
DG
BZX884-C4V3
B7
BZX884-C11
BH
BZX884-C30
D7
BZX884-C75
DH
BZX884-C4V7
B8
BZX884-C12
BJ
BZX884-C33
D8
BZX884-C5V1
B9
BZX884-C13
BK
BZX884-C36
D9
BZX884-C5V6
BA
BZX884-C15
BL
BZX884-C39
DA
2004 Mar 26
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX884 series
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BZX884-B2V4
to
BZX884-B75
−
Leadless ultra small plastic package;2 terminals; body 1.0 x
0.6 x 0.5 mm
SOD882
BZX884-C2V4
to
BZX884-C75
−
Leadless ultra small plastic package;2 terminals; body 1.0 x
0.6 x 0.5 mm
SOD882
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
200
UNIT
IF
continuous forward current
IZSM
non-repetitive peak reverse
current
tp = 100 μs; square wave;
Tamb = 25 °C; prior to surge
see Tables 1 and
2
mA
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
2004 Mar 26
3
VALUE
UNIT
500
K/W
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX884 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
2004 Mar 26
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.2
0.9
V
BZX884-B/C2V4
VR = 1 V
50
μA
BZX884-B/C2V7
VR = 1 V
20
μA
BZX884-B/C3V0
VR = 1 V
10
μA
BZX884-B/C3V3
VR = 1 V
5
μA
BZX884-B/C3V6
VR = 1 V
5
μA
BZX884-B/C3V9
VR = 1 V
3
μA
BZX884-B/C4V3
VR = 1 V
3
μA
BZX884-B/C4V7
VR = 2 V
3
μA
BZX884-B/C5V1
VR = 2 V
2
μA
BZX884-B/C5V6
VR = 2 V
1
μA
BZX884-B/C6V2
VR = 4 V
3
μA
BZX884-B/C6V8
VR = 4 V
2
μA
BZX884-B/C7V5
VR = 5 V
1
μA
BZX884-B/C8V2
VR = 5 V
700
nA
BZX884-B/C9V1
VR = 6 V
500
nA
BZX884-B/C10
VR = 7 V
200
nA
BZX884-B/C11
VR = 8 V
100
nA
BZX884-B/C12
VR = 8 V
100
nA
BZX884-B/C13
VR = 8 V
100
nA
BZX884-B/C15 to 75
VR = 0.7 VZnom
50
nA
4
DIFFERENTIAL RESISTANCE
rdif (Ω)
Tol. ±2% (B)
Tol. ±5% (C)
at IZtest = 1 mA
at IZtest = 5 mA
MIN.
MIN.
TYP.
TYP.
MAX.
MAX.
MAX.
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
TYP.
MAX.
MAX.
MAX.
5
2.45
2.28
2.52
275
400
70
100
−1.3
450
6.0
2V7
2.65
2.75
2.57
2.84
300
450
75
100
−1.4
440
6.0
3V0
2.94
3.06
2.85
3.15
325
500
80
95
−1.6
425
6.0
3V3
3.23
3.37
3.14
3.47
350
500
85
95
−1.8
410
6.0
3V6
3.53
3.67
3.42
3.78
375
500
85
90
−1.9
390
6.0
3V9
3.82
3.98
3.71
4.10
400
500
85
90
−1.9
370
6.0
4V3
4.21
4.39
4.09
4.52
410
600
80
90
−1.7
350
6.0
4V7
4.61
4.79
4.47
4.94
425
500
50
80
−1.2
325
6.0
5V1
5.00
5.20
4.85
5.36
400
480
40
60
−0.5
300
6.0
5V6
5.49
5.71
5.32
5.88
80
400
15
40
1.0
275
6.0
6V2
6.08
6.32
5.89
6.51
40
150
6
10
2.2
250
6.0
6V8
6.66
6.94
6.46
7.14
30
80
6
15
3.0
215
6.0
7V5
7.35
7.65
7.13
7.88
15
80
2
10
3.6
170
4.0
8V2
8.04
8.36
7.79
8.61
20
80
2
10
4.3
150
4.0
9V1
8.92
9.28
8.65
9.56
20
100
2
10
5.2
120
3.0
10
9.80
10.20
9.50
10.50
20
150
2
10
6.0
110
3.0
11
10.78
11.22
10.45
11.55
25
150
2
10
6.9
110
2.5
12
11.76
12.24
11.40
12.60
25
150
2
10
7.9
105
2.5
13
12.74
13.26
12.35
13.65
25
170
2
10
8.8
105
2.5
15
14.70
15.30
14.25
15.75
25
200
3
15
10.7
100
2.0
16
15.68
18.32
15.20
16.80
50
200
10
40
12.4
90
1.5
18
17.64
18.36
17.10
18.90
50
225
10
45
14.4
80
1.5
20
19.60
20.40
19.00
21.00
60
225
15
55
16.4
70
1.5
22
21.56
22.44
20.90
23.10
60
250
20
55
18.4
60
1.25
24
23.52
24.48
22.80
25.20
60
250
25
70
20.4
55
1.25
Product data sheet
2.35
BZX884 series
2V4
NXP Semiconductors
BZX884B or C
XXX
WORKING VOLTAGE
VZ (V)
at IZ = 5 mA
Voltage regulator diodes
2004 Mar 26
Table 1 Per type BZX884-B/C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
DIFFERENTIAL RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
TYP.
MAX.
MAX.
6
Tol. ±2% (B)
Tol. ±5% (C)
MIN.
MAX.
MIN.
MAX.
27
26.46
27.54
25.65
28.35
65
300
25
80
23.4
50
1.0
30
29.40
30.60
28.50
31.50
70
300
30
80
26.6
50
1.0
33
32.34
33.66
31.35
34.65
75
325
35
80
29.7
45
0.9
36
35.28
36.72
34.20
37.80
80
350
35
90
33.0
45
0.8
39
38.22
39.78
37.05
40.95
80
350
40
130
36.4
45
0.7
43
42.14
43.86
40.85
45.15
85
375
45
150
41.2
40
0.6
47
46.06
47.94
44.65
49.35
85
375
50
170
46.1
40
0.5
51
49.98
52.02
48.45
53.55
90
400
60
180
51.0
40
0.4
56
54.88
57.12
53.20
58.80
100
425
70
200
57.0
40
0.3
62
60.76
63.24
58.90
65.10
120
450
80
215
64.4
35
0.3
68
66.64
69.36
64.60
71.40
150
475
90
240
71.7
35
0.25
75
73.50
76.50
71.25
78.75
170
500
95
255
80.2
35
0.2
at IZtest = 0.5 mA
TYP.
MAX.
at IZtest = 2 mA
TYP.
MAX.
NXP Semiconductors
BZX884B or C
XXX
WORKING VOLTAGE
VZ (V)
at IZ = 2 mA
Voltage regulator diodes
2004 Mar 26
Table 2 Per type BZX884-B/C27 to B/C75
Tj = 25 °C unless otherwise specified.
Product data sheet
BZX884 series
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX884 series
GRAPHICAL DATA
MLD444
MBG781
0.5
300
handbook, halfpage
handbook, halfpage
SZ
(mV/K)
IF
(mA)
4V7
0
4V3
200
−0.5
2V4
2V7
3V9
−1
100
3V6
−1.5
0
0.6
0.8
−2
10−1
1
VF (V)
3V3
3V0
1
Tj = 25 °C.
BZX884-B/C2V4 to B/C4V7.
Tj = 25 to 150 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MLD445
12
handbook, halfpage
15
SZ
(mV/K)
13
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
8
4
0
−4
10−1
1
10
IZ (mA)
102
BZX884-B/C5V1 to B/C15.
Tj = 25 to 150 °C.
Fig.4
Temperature coefficient as a function of
working current; typical values.
2004 Mar 26
7
10
IZ (mA)
102
Temperature coefficient as a function of
working current; typical values.
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX884 series
PACKAGE OUTLINE
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
L
SOD882
L
1
2
b
e1
A
A1
E
D
(2)
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
D
E
e1
L
mm
0.50
0.46
0.03
0.55
0.47
0.62
0.55
1.02
0.95
0.65
0.30
0.22
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
03-04-16
03-04-17
SOD882
2004 Mar 26
EUROPEAN
PROJECTION
8
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX884 series
SOLDERING
Reflow soldering is the only recommended soldering method.
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
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in this document and such terms and conditions, the latter
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reserves the right to make changes to information
published in this document, including without limitation
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information supplied prior to the publication hereof.
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use in medical, military, aircraft, space or life support
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Semiconductors products in such equipment or
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
2004 Mar 26
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
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Printed in The Netherlands
R76/02/pp10
Date of release: 2004 Mar 26
Document order number: 9397 750 12713
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