DG417BMIL, DG418BMIL, DG419BMIL Datasheet

DG417BMIL, DG418BMIL, DG419BMIL
www.vishay.com
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
FEATURES
The DG417B, DG418B, DG419B monolithic CMOS analog
switches were designed to provide high performance
switching of analog signals. Combining low power, low
leakages, high speed, low on-resistance and small physical
size, the DG417B series is ideally suited for portable and
battery powered industrial and military applications requiring
high performance and efficient use of board space.
•
•
•
•
•
To achieve high-voltage ratings and superior switching
performance, the DG417B series is built on Vishay
Siliconix’s high voltage silicon gate (HVSG) process.
Break-before-make is guaranteed for the DG419B, which is
an SPDT configuration. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
The DG417B and DG418B respond to opposite control logic
levels as shown in the Truth Table.
± 15 V analog signal range
On-resistance - RDS(on): 15 
Fast switcing action - tON: 110 ns
TTL and CMOS compatible
8-pin CerDIP package
BENEFITS
•
•
•
•
•
•
Widest dynamic ranges
Low signal errors and distortion
Break-before-make switching action
Simple interfacing
Reduced board space
Improved reliability
APPLICATIONS
•
•
•
•
•
•
•
•
Precision test equipment
Precision instrumentation
Battery powered systems
Sample-and-hold circuits
Military radios
Hi-Rel systems
Guidance and control systems
Hard disk drivers
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417B, DG418B
Dual-In-Line
S
1
8
D
No connect
2
7
V-
GND
3
6
IN
V+
4
5
VL
TRUTH TABLE
LOGIC
DG417B
DG418B
0
On
Off
1
Off
On
Notes
• Logic “0”  0.8 V
• Logic “1”  2.4 V
Top View
DG419B
Dual-In-Line
TRUTH TABLE (DG419B)
D
1
8
S2
LOGIC
SW1
SW2
S1
2
7
V-
0
On
Off
GND
3
6
IN
1
Off
On
V+
4
5
VL
Top View
S12-0496-Rev. B, 05-Mar-12
Notes
• Logic “0”  0.8 V
• Logic “1”  2.4 V
Document Number: 63275
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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DG417BMIL, DG418BMIL, DG419BMIL
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Vishay Siliconix
ORDERING INFORMATION
PART
CONFIGURATION
DG417B
TEMP. RANGE
PACKAGE
ORDERING PART
GENERIC
DSCC NUMBER
9073704PA
DG417BAK/883
5962-9073704MPA
-
SPST x 1, NC
DG418B
SPST x 1, NO
DG419B
- 55 °C to 125 °C
8-pin CerDIP
SPDT x 1
DG417BAK
DG417BAK
DG417BAK-E3
DG417BAK-E3
-
9073705PA
DG418BAK/883
5962-9073705MPA
-
DG418BAK
DG418BAK
DG418BAK-E3
DG418BAK-E3
-
9073706PA
DG419BAK/883
5962-9073706MPA
DG419BAK
DG419BAK
-
DG419BAK-E3
DG419BAK-E3
-
ABSOLUTE MAXIMUM RATINGS
PARAMETER
V+
Voltages Referenced to V-
GND
VL
LIMIT
44
UNIT
25
V
(GND - 0.3) to (V+) + 0.3
(V-) - 2 V to (V+) + 2
or 30 mA, whichever occurs first
Digital inputsa, VS, VD
Current, (any terminal) continuous
30
Current (S or D) pulsed at 1 ms, 10 % duty cycle
100
Storage temperature
Power dissipation (package)b
8-pin CerDIPc
mA
- 65 to 150
°C
600
mW
Notes
a. Signals on SX, DX or INX exceeding V + or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 8 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (Typical Channel)
V+
S
VL
VVIN
Level
Shift/
Drive
V+
GND
D
V-
Fig. 1
S12-0496-Rev. B, 05-Mar-12
Document Number: 63275
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG417BMIL, DG418BMIL, DG419BMIL
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Vishay Siliconix
SPECIFICATIONSa
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
A SUFFIX
- 55 °C to 125 °C
TEMP.b
TYP.c
MIN.d
MAX.d
UNIT
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
RDS(on)
Full
IS = - 10 mA, VD = ± 12.5 V
V+ = 13.5 V, V - = - 13.5 V
IS(off)
ID(off)
V+ = 16.5, V- = - 16.5 V
VD = ± 15.5 V, VS = ± 15.5 V
DG418B
DG419B
DG417B
Channel On Leakage
Current
ID(on)
V
15
25
Full
15
34

Room
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 0.4
- 0.4
- 0.4
- 0.4
- 0.4
- 0.4
Full
DG417B
Switch Off Leakage
Current
15
Room
V+ = 16.5 V, V - = - 16.5 V
VS = VD = ± 15.5 V
DG418B
DG419B
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
- 15
- 0.25
0.25
- 20
20
- 0.25
0.25
- 20
20
- 0.25
0.25
- 20
20
- 0.75
0.75
- 60
60
- 0.4
0.4
- 40
40
- 0.4
0.4
- 40
40
- 0.75
0.75
- 60
60
nA
Digital Control
Input Current, VIN Low
IIL
Full
- 0.5
0.5
Input Current, VIN High
IIH
Full
- 0.5
0.5
μA
Dynamic Characteristics
DG417B
Turn-On Time
tON
RL = 300 , CL = 35 pF
VS = ± 10 V, see switching time
test circuit
Turn-Off Time
DG418B
DG417B
tOFF
DG418B
Full
53
88
Room
53
80
88
CL = 10 nF, Vgen = 0 V, Rgen = 0 
Room
38
RL = 50 CL = 5 pF,
f = 1 MHz
Room
- 82
Room
- 88
Room
12
DG417B
Room
12
DG418B
Room
12
DG417B
Room
50
DG418B
Room
50
DG419B
Room
57
CD(off)
f = 1 MHz, VS = 0 V
ns
3
pC
dB
DG419B
f = 1 MHz, VS = 0 V
S12-0496-Rev. B, 05-Mar-12
80
16
OIRR
CD(on)
53
Room
Q
Channel On
Capacitancee
Room
87
Charge Injection
Drain Off Capacitancee
106
96
DG419B
CS(off)
89
62
60
RL = 300 , CL = 35 pF
VS1 = VS2 = ± 10 V
Source Off
Capacitancee
62
Full
Full
tD
XTALK
Room
60
Break-Before-Make
Time Delay
Channel-to-Channel
Crosstalke
106
53
DG419B
Off
89
62
Full
tTRANS
Isolatione
62
Full
Room
RL = 300 , CL = 35 pF
VS1 = ± 10 V, VS2 = ± 10 V
Transition Time
Room
pF
Document Number: 63275
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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DG417BMIL, DG418BMIL, DG419BMIL
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Vishay Siliconix
SPECIFICATIONSa
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 12 V, V- = - 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
A SUFFIX
- 55 °C to 125 °C
TEMP.b
TYP.c
Room
0.001
MIN.d
MAX.d
UNIT
Power Supplies
Positive Supply Current
I+
Negative Supply
Current
I-
Logic Supply Current
IL
Ground Current
1
Full
Room
5
- 0.001
Full
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 V or 5 V
Room
-1
-5
0.001
1
Full
Room
IGND
μA
5
- 0.001
Full
-1
-5
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
RDS(on)
Full
IS = - 10 mA, VD = 3.8 V
V+ = 10.8 V
0
12
Room
26
35
Full
26
52
V

Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make
Time Delay
tD
RL = 300 , CL = 35 pF
VS = 8 V, see switching time test circuit
RL = 300 , CL = 35 pF
DG419B
Room
100
125
Full
100
155
Room
38
66
Full
38
69
Room
62
ns
25
Transition Time
tTRANS
RL = 300 , CL = 35 pF
VS1 = 0 V, 8 V, VS2 = 8 V,0 V
Room
95
119
Full
95
153
Charge Injection
Q
CL = 10 nF, Vgen = 0 V, Rgen = 0 
Room
18
Room
0.001
1
Full
0.001
5
Room
- 0.001
pC
Power Supplies
Positive Supply Current
I+
Negative Supply
Current
I-
Logic Supply Current
IL
Ground Current
IGND
V+ = 13.2 V, VL = 5.25 V
VIN = 0 V or 5 V
Room
0.001
Room
- 0.001
-1
-5
μA
1
5
-1
-5
Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-0496-Rev. B, 05-Mar-12
Document Number: 63275
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG417BMIL, DG418BMIL, DG419BMIL
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
300
40
RDS(on) - Drain-Source On-Resistance (Ω)
RDS(on) - Drain-Source On-Resistance (Ω)
TA = 25 °C
VL = 5 V
250
200
V+ = 3 V
VL = 3 V
150
100
V+ = 12 V
V+ = 5 V
50
V+ = 15 V
V+ = 8 V
V+ = 20 V
0
0
4
8
12
16
TA = 25 °C
35
30
±5V
25
±8V
20
± 10 V
± 12 V
15
± 15 V
10
± 20 V
5
- 20
20
- 15
- 10
VD - Drain Voltage (V)
RDS(on) - Drain-Source On-Resistance (Ω)
RDS(on) - Drain-Source On-Resistance (Ω)
V ± = ± 15 V
VL = 5 V
25
125 °C
20
85 °C
15
25 °C
- 55 °C
10
20
125 °C
40
35
85 °C
30
25 °C
25
- 55 °C
20
15
V+ = 12 V
V- = 0 V
VL = 5 V
10
-5
0
5
10
15
0
2
4
6
8
10
12
VD - Drain Voltage (V)
On-Resistance vs. VD and Temperature
On-Resistance vs. VD and Temperature
100 m
V ± = ± 15 V
VL = 5 V
TA = 25 °C
I+ - Supply Current (nA)
ID(on)
ID(off)
20
0
IS(off)
- 20
- 40
1m
100 µ
I+, I10 µ
100 n
10 n
- 80
1n
-5
0
5
10
VD or VS - Drain or Source Voltage (V)
Leakage vs. Analog Voltage
S12-0496-Rev. B, 05-Mar-12
15
IL
1µ
- 60
- 10
V ± = ± 15 V
VL = 5 V
10 m
40
ID, IS (pA)
15
5
- 10
100
- 100
-15
10
45
VD - Drain Voltage (V)
60
5
50
30
80
0
On-Resistance vs. VD and Dual Supply Voltage
On-Resistance vs. VD and Unipolar Power Supply Voltage
5
- 15
-5
VD - Drain Voltage (V)
100 p
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply current vs. Input Switching Frequency
Document Number: 63275
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
140
100
VL = 5 V
90
120
80
tON V = 12 V
t ON , t OFF (ns)
100
t ON , t OFF (ns)
V ± = ± 15 V
VL = 5 V
80
tON V = ± 15 V
60
tOFF V = ± 15 V
70
tTRANS-
60
tTRANS+
50
40
tOFF V = 12 V
40
30
20
- 55
- 35
- 15
5
25
45
65
85
105
20
- 55
125
- 35
- 15
25
45
65
105
125
10
140
Loss, OIRR, X TALK (dB)
- 10
tTRANS-
100
Loss
0
V+ = 12 V
V- = 0 V
VL = 5 V
120
80
tTRANS+
60
- 20
- 30
OIRR
- 40
- 50
- 60
- 70
DG417B
V+ = + 15 V
V- = - 15 V
RL = 50 Ω
- 80
40
- 90
20
- 55
- 35
- 15
5
25
45
65
85
105
- 100
100K
125
1M
10M
100M
1G
Frequency (Hz)
Temperature ( C)
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
Transition Time vs. Temperature
3.0
10
VL = 5 V
Loss
0
2.5
- 10
Loss, OIRR, X TALK (dB)
VT - Switching Threshold (V)
85
Transition Time vs. Temperature
Switching Time vs. Temperature
t ON , t OFF (ns)
5
Temperature ( C)
Temperature ( C)
2.0
1.5
1.0
0.5
- 20
- 30
OIRR
- 40
XTALK
- 50
- 60
- 70
DG419B
V+ = + 15 V
V- = - 15 V
RL = 50 Ω
- 80
- 90
0.0
4
6
8
10
12
14
16
18
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
S12-0496-Rev. B, 05-Mar-12
20
- 100
100K
1M
10M
100M
1G
Frequency (Hz)
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
Document Number: 63275
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
160
140
120
100
80
60
40
20
0
200
180
DG417B
CL = 10 nF
DG417B
CL = 10 nF
160
140
V+ = + 15 V
V- = - 15 V
Qinj - Charge Injection (pC)
Qinj - Charge Injection (pC)
200
180
V+ = + 12 V
V- = 0 V
- 20
- 40
120
100
80
V+ = + 15 V
V- = - 15 V
60
40
20
0
V+ = + 12 V
V- = 0 V
- 20
V+ = + 12 V
V- = - 12 V
- 40
V+ = + 12 V
V- = - 12 V
- 60
- 80
- 100
- 15 - 12
-9
-6
-3
0
3
6
9
12
- 60
- 80
- 100
- 15 - 12
15
-9
Qinj - Charge Injection (pC)
Qinj - Charge Injection (pC)
DG419B
CL = 10 nF
V+ = + 12 V
V- = - 12 V
V+ = + 12 V
V- = - 0 V
V+ = + 15 V
V- = - 15 V
-9
-6
-3
0
3
-3
0
3
6
9
12
15
Charge Injection vs. Analog Voltage
(Measured at source pin)
Charge Injection vs. Analog Voltage
(Measured at drain pin)
100
80
60
40
20
0
- 20
- 40
- 60
- 80
- 100
- 120
- 140
- 160
- 180
- 200
- 15 - 12
-6
Analog Voltage (V)
Analog Voltage (V)
6
9
12
15
200
180
DG419B
160
CL = 10 nF
140
120
100
V+ = + 15 V
80
V- = - 15 V
60
40
20
0
- 20
- 40
V+ = + 12 V
- 60
V- = - 12 V
- 80
- 100
- 15 - 12 - 9 - 6 - 3
0
V+ = + 12 V
V- = - 0 V
3
6
9
12
15
Analog Voltage (V)
Analog Voltage (V)
Charge Injection vs. Analog Voltage
(Measured at source pin)
Charge Injection vs. Analog Voltage
(Measured at drain pin)
TEST CIRCUITS
VO is the steady state output with the switch on.
+5V
+ 15 V
3V
Logic
Input
VL
V+
S
0V
D
VO
10 V
IN
GND
tr < 5 ns
tf < 5 ns
50 %
V-
RL
300
- 15 V
CL (includes fixture and stray capacitance)
RL
VO = VS
RL + R DS(on)
CL
35 pF
tOFF
Switch
Input
VS
Switch
Output
0V
Note:
VO
90 %
tON
Logic input waveform is inverted for switches that have the
opposite logic sense.
Fig. 2 - Switching Time (DG417B, DG418B)
S12-0496-Rev. B, 05-Mar-12
Document Number: 63275
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TEST CIRCUITS
+5V
+1V
Logic
Input
VL
V+
S1
VS1
tr < 5 ns
tf < 5 ns
3V
0V
D
VO
S2
VS2
RL
300
IN
VS1 = VS2
VO
CL
35 pF
Switch
Output
V-
GND
90 %
0V
tD
tD
CL (includes fixture and stray capacitance)
- 15 V
Fig. 3 - Break-Before-Mak (DG419B)
+5V
VL
+ 15 V
V+
S1
VS1
D
VO
Logic
Input
50 %
0V
S2
VS2
IN
tTRANS
CL
35 pF
RL
300
tr < 5 ns
tf < 5 ns
3V
tTRANS
VS1
V01
V-
GND
90 %
Switch
Output
V02
VS2
- 15 V
10 %
CL (includes fixture and stray capacitance)
VO = VS
RL
RL + rDS(on)
Fig. 4 - Transition Time (DG419B)
Rg
+5V
+ 15 V
VL
V+
S
VO
D
IN
VO
INX
OFF
CL
10 nF
3V
GND
VO
V-
ON
OFF
Q = VO x CL
- 15 V
Fig. 5 - Charge Injection
S12-0496-Rev. B, 05-Mar-12
Document Number: 63275
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TEST CIRCUITS
+5V
+ 15 V
C
+5V
C
VL
C
V+
S1
VS
VL
V+
S
VS
50
VO
D
Rg = 50
S2
RL
IN
0 V, 2.4 V
RL
C
D
Rg = 50
VO
+ 15 V
IN
0.8 V
GND
GND
C
V-
VO
Off Isolation = 20 log
VS
C = RF bypass
Fig. 7 - Off Isolation
+ 15 V
C
C
VL
V+
S
VS
VO
VS
Fig. 6 - Crosstalk
+5V
C
- 15 V
- 15 V
XTALK Isolation = 20 log
V-
D
VO
Rg = 50
0 V, 2.4 V
RL
IN
GND
V-
C
- 15 V
Fig. 8 - Insertion Loss
+5V
+ 15 V
NC
+ 15 V
C
C
VL
C
V+
S
DG417B/418B
DG419B
Meter
0 V, 2.4 V
IN
HP4192A
Impedance
Analyzer
or Equivalent
D
GND
V-
S1
V+ S2
C
f = 1 MHz
0 V, 2.4 V
Meter
IN
D2
GND
HP4192A
Impedance
Analyzer
or Equivalent
D1
V-
C
f = 1 MHz
- 15 V
- 15 V
Fig. 9 - Source-Drain Capacitances
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63275.
S12-0496-Rev. B, 05-Mar-12
Document Number: 63275
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Package Information
Vishay Siliconix
CERDIP: 8ĆLEAD
8
7
6
MILLIMETERS
5
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
L1
Q1
S
E
E1
1
2
3
4
D
S
e1
Q1
A
L1
A1
∝
L
INCHES
Min
Max
Min
Max
4.06
5.08
0.160
0.200
0.51
1.14
0.020
0.045
0.38
0.51
0.015
0.020
1.14
1.65
0.045
0.065
0.20
0.30
0.008
0.012
9.40
10.16
0.370
0.400
7.62
8.26
0.300
0.325
6.60
7.62
0.260
0.300
2.54 BSC
0.100 BSC
7.62 BSC
0.300 BSC
3.18
3.81
0.125
0.150
3.18
5.08
0.150
0.200
1.27
2.16
0.050
0.085
0.64
1.52
0.025
0.060
0°
15°
0°
15°
ECN: S-03946—Rev. C, 09-Jul-01
DWG: 5348
B1
B
Document Number: 71280
03-Jul-01
C
eA
∝
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1
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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