2.4 GHz High-Efficiency, High-Gain Power Amplifier Module - SST12LP17E

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
A Microchip Technology Company
Product Brief
The SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier
module based on the highly-reliable InGaP/GaAs HBT technology and designed in
compliance with IEEE 802.11b/g/n applications. It typically provides 29 dB gain with
28% power-added efficiency. The SST12LP17E has excellent linearity while meeting 802.11g spectrum mask at 21.5 dBm. The SST12LP17E also features easy
board-level usage, along with high-speed power-up/-down control through a single
combined reference voltage pin, and is offered in both 8-contact USON and 8-contact X2SON packages.
Features
Block Diagram
• Input/Output ports matched to 50 internally and
DC decoupled
VCC1
VCC2
• High gain:
– Typically 29 dB gain across 2.4–2.5 GHz
• High linear output power (at 3.3V):
RFIN
– >24 dBm P1dB
– Meets 802.11g OFDM ACPR requirement up to 21.5 dBm
– ~3% added EVM up to 18 dBm for 54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 22.5 dBm
• High power-added efficiency/Low operating current for both 802.11b/g/n applications
Output
Match
Input
Match
RFOUT
Bias Circuit
– ~28% @ POUT = 21.5 dBm for 802.11g
– ~33% @ POUT = 22.5 dBm for 802.11b
VCCb
• Low shut-down current (~2 µA)
VREF DET
75009 B1.1
• Delivers excellent performance at low temperature
down to 2.7 V bias voltage.
• Limited variation over temperature
Product Ordering
– ~2 dB gain variation between -40°C to +85°C
– ~1 dB power variation between -40°C to +85°C
• Temperature and load insensitive on-chip power
detector
– >15 dB dynamic range
Valid combinations for SST12LP17E
SST12LP17E-QU8E
SST12LP17E-XX8E
• Packages available
SST12LP17E Evaluation Kits
– 8-contact USON – 2mm x 2mm x 0.550mm
– 8-contactX2SON – 2mm x 2mm x 0.375mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n)
SST12LP17E-QU8E-K
SST12LP17E-XX8E-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations
and to determine availability of new combinations.
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
©2012 Silicon Storage Technology, Inc.
www.microchip.com
DS75009B
05/12
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
A Microchip Technology Company
Product Brief
Contact Information
Thank you for your interest in Microchip RF products. The data sheet for this device contains proprietary information. To obtain a copy of the data sheet, contact your local Microchip sales representative
or distributor at the link below.
Global Sales and Distribution
Table 1:Revision History
Revision
A
B
Description
•
•
Initial release of Product Brief
Added package XX8E
Date
Jun 2011
May 2012
ISBN:978-1-62076-287-5
© 2012 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved.
SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and
registered trademarks mentioned herein are the property of their respective owners.
Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current
package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging.
Memory sizes denote raw storage capacity; actual usable capacity may be less.
SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of
Sale.
For sales office locations and information, please see www.microchip.com.
Silicon Storage Technology, Inc.
A Microchip Technology Company
www.microchip.com
©2012 Silicon Storage Technology, Inc.
DS75009B
2
05/12
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