2.4 GHz High-Efficiency, High-Gain Power AmplifierSST12LP19E Module -

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP19E
A Microchip Technology Company
Product Brief
The SST12LP19E is a 2.4 GHz high-efficiency Power Amplifier based on the highlyreliable InGaP/GaAs HBT technology and designed in compliance with IEEE
802.11b/g/n applications. It typically provides 25 dB gain with 34% power-added
efficiency, while meeting 802.11g spectrum mask at 23.5 dBm. The SST12LP19E
also features easy board-level usage, along with high-speed power-up/-down control through a single combined reference voltage pin, and is offered in both a 6-contact XSON and 8-contact XSON package.
Features
Block Diagram
• High gain:
VCC1
– Typically 25 dB gain across 2.4–2.5 GHz
VCC2
• High linear output power (at 3.3V):
– ~3% added EVM up to 20 dBm (high-power configuration)
– ~2.5% added EVM up to 18 dBm (high-efficiency configuration)
– Meets 802.11g OFDM ACPR requirement up to 23.5 dBm
– Meets 802.11b ACPR requirement up to 23 dBm
RFIN
RFOUT
• High power-added efficiency/Low operating current for 802.11b/g/n applications
– ~34% @ POUT = 23.5 dBm for 802.11g
– ~31% @ POUT = 23 dBm for 802.11b
Bias Circuit
• Low shut-down current (~2 µA)
• Delivers excellent performance at low temperature
down to 2.75 V bias voltage.
VCCB
VREF
DET
75021 B1.0
• Limited variation over temperature
– ~2.5 dB gain variation between -40°C to +85°C
– ~1 dB power variation between -40°C to +85°C
• Temperature and load insensitive on-chip power
detector
– >20dB dynamic range
Valid combinations for SST12LP19E
SST12LP19E-QX8E
• Packages available
– 8-contact XSON – 2mm x 2mm x 0.45mm
– 6-contact XSON – 1.5mm x 1.5mm x 0.45mm
• WLAN (IEEE 802.11b/g/n)
SST12LP19E-QX6E
SST12LP19E Evaluation Kits
• All non-Pb (lead-free) devices are RoHS compliant
Applications
Product Ordering
SST12LP19E-QX8E-K
SST12LP19E-QX6E-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations
and to determine availability of new combinations.
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
©2011 Silicon Storage Technology, Inc.
www.microchip.com
DS75021A
07/11
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP19E
A Microchip Technology Company
Product Brief
Contact Information
Thank you for your interest in Microchip RF products. The data sheet for this device contains proprietary information. To obtain a copy of the data sheet, contact your local Microchip sales representative
or distributor at the link below.
Global Sales and Distribution
Table 1:Revision History
Revision
A
Description
•
Initial release of Product Brief
Date
Jul 2011
ISBN:978-1-61341-446-0
© 2011 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved.
SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and
registered trademarks mentioned herein are the property of their respective owners.
Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current
package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging.
Memory sizes denote raw storage capacity; actual usable capacity may be less.
SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of
Sale.
For sales office locations and information, please see www.microchip.com.
Silicon Storage Technology, Inc.
A Microchip Technology Company
www.microchip.com
©2011 Silicon Storage Technology, Inc.
DS75021A
2
07/11
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