2.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP19E A Microchip Technology Company Product Brief The SST12LP19E is a 2.4 GHz high-efficiency Power Amplifier based on the highlyreliable InGaP/GaAs HBT technology and designed in compliance with IEEE 802.11b/g/n applications. It typically provides 25 dB gain with 34% power-added efficiency, while meeting 802.11g spectrum mask at 23.5 dBm. The SST12LP19E also features easy board-level usage, along with high-speed power-up/-down control through a single combined reference voltage pin, and is offered in both a 6-contact XSON and 8-contact XSON package. Features Block Diagram • High gain: VCC1 – Typically 25 dB gain across 2.4–2.5 GHz VCC2 • High linear output power (at 3.3V): – ~3% added EVM up to 20 dBm (high-power configuration) – ~2.5% added EVM up to 18 dBm (high-efficiency configuration) – Meets 802.11g OFDM ACPR requirement up to 23.5 dBm – Meets 802.11b ACPR requirement up to 23 dBm RFIN RFOUT • High power-added efficiency/Low operating current for 802.11b/g/n applications – ~34% @ POUT = 23.5 dBm for 802.11g – ~31% @ POUT = 23 dBm for 802.11b Bias Circuit • Low shut-down current (~2 µA) • Delivers excellent performance at low temperature down to 2.75 V bias voltage. VCCB VREF DET 75021 B1.0 • Limited variation over temperature – ~2.5 dB gain variation between -40°C to +85°C – ~1 dB power variation between -40°C to +85°C • Temperature and load insensitive on-chip power detector – >20dB dynamic range Valid combinations for SST12LP19E SST12LP19E-QX8E • Packages available – 8-contact XSON – 2mm x 2mm x 0.45mm – 6-contact XSON – 1.5mm x 1.5mm x 0.45mm • WLAN (IEEE 802.11b/g/n) SST12LP19E-QX6E SST12LP19E Evaluation Kits • All non-Pb (lead-free) devices are RoHS compliant Applications Product Ordering SST12LP19E-QX8E-K SST12LP19E-QX6E-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. • Home RF • Cordless phones • 2.4 GHz ISM wireless equipment ©2011 Silicon Storage Technology, Inc. www.microchip.com DS75021A 07/11 2.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP19E A Microchip Technology Company Product Brief Contact Information Thank you for your interest in Microchip RF products. The data sheet for this device contains proprietary information. To obtain a copy of the data sheet, contact your local Microchip sales representative or distributor at the link below. Global Sales and Distribution Table 1:Revision History Revision A Description • Initial release of Product Brief Date Jul 2011 ISBN:978-1-61341-446-0 © 2011 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging. Memory sizes denote raw storage capacity; actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office locations and information, please see www.microchip.com. Silicon Storage Technology, Inc. A Microchip Technology Company www.microchip.com ©2011 Silicon Storage Technology, Inc. DS75021A 2 07/11