DG2501, DG2502, DG2503 www.vishay.com Vishay Siliconix 200 Ω, Low Leakage, Low Parasitic and Low Charge Injection, Quad SPST Analog Switches DESCRIPTION FEATURES The DG2501, DG2502, and DG2503 are monolithic quad single-pole single-throw (SPST) analog switches that operate from a single 1.8 V to 5.5 V power supply. These switches are fully specified at 3 V and 5 V. The parts feature low parasitic capacitance, low charge injection, and low leakage performance over the full operating temperature range of -40 °C to +85 °C. Their ESD/HBM tolerance is over 8 kV. The DG2501, DG2502, and DG2503 each feature four independently selectable SPST switches with closely matched channel resistance. The DG2501 is normally closed, while the DG2502 is normally open. The DG2503 has two normally open and two normally closed switches. All parts are guaranteed break-before-make operation for use in multiplexer applications. The parts have a guaranteed control logic high of 1.4 V when V+ is 3 V and 1.8 V when V+ is 5 V. Each switch conducts equally well in both directions when on, and each has an input signal range that extends to the supplies. The DG2501, DG2502, and DG2503 are ideal for portable healthcare, instrument, and communication devices. The DG2501, DG2502, and DG2503 are available in wafer level CSP package with top side lamination. The package has a 4 x 4 bump array, 0.35 mm pitch, and 1.44 mm x 1.44 mm length and width. • 1.8 V to 5.5 V single supply operation • Low leakage, 1 nA / max. at 85 °C • Low switch off capacitance • Rail-to-rail signal handling • Latch up current > 800 mA (JESD78) • ESD: 8000 V/HBM, 500 V/CDM • Typical power consumption (< 0.01 μW) • TTL/CMOS compatible • Compact WCSP16 1.44 mm x 1.44 mm • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Analog front end signal switching • Sample-and-hold circuits • Battery-powered systems • Portable meters • Automatic test equipment • Medical and healthcare equipment • Communication systems FUNCTIONAL BLOCK DIAGRAM Switches are shown for a Logic 0 Input TRUTH TABLE DG2501 DG2502 DG2503 LOGIC 0 SWITCH ON LOGIC 0 SWITCH OFF LOGIC 0 SW1, SW4 OFF SW2, SW3 ON 1 OFF 1 ON 1 ON OFF S14-1059-Rev. A, 19-May-14 Document Number: 62962 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2501, DG2502, DG2503 www.vishay.com Vishay Siliconix ORDERING INFORMATION PART NUMBER CONFIGURATION SWITCH FUNCTION TEMPERATURE RANGE PACKAGE REEL QUANTITY DG2501DB-T2-GE1 Quad SPST NC -40 °C to +85 °C WCSP16, 1.44 mm x 1.44 mm 3000 DG2501DB-T4-GE1 Quad SPST NC -40 °C to +85 °C WCSP16, 1.44 mm x 1.44 mm 10 000 DG2502DB-T2-GE1 Quad SPST NO -40 °C to +85 °C WCSP16, 1.44 mm x 1.44 mm 3000 DG2502DB-T4-GE1 Quad SPST NO -40 °C to +85 °C WCSP16, 1.44 mm x 1.44 mm 10 000 DG2503DB-T2-GE1 Quad SPST NC/NO -40 °C to +85 °C WCSP16, 1.44 mm x 1.44 mm 3000 DG2503DB-T4-GE1 Quad SPST NC/NO -40 °C to +85 °C WCSP16, 1.44 mm x 1.44 mm 10 000 PACKAGE OUTLINE A1 A2 GND B1 D3 B2 S2 IN2 C1 C2 D2 IN1 D1 D2 S1 V+ A3 S3 B3 IN3 C3 IN4 D3 D1 A4 GND B4 D4 Top View (Bump Side Down) C4 S4 D4 GND Fig. 1 - Package Outline for WCSP16, 1.44 mm x 1.44 mm, 0.35 mm Pitch DEVICE MARKING 1 2 3 4 A B C Row 1 Dot = Pin A1 Locator Row 2 B = Fab, 4 = Year, C = Week Code, A = Lot Code Row 3 2501 = Part Code D Fig. 2 - Device Marking ABSOLUTE MAXIMUM RATINGS ELECTRICAL PARAMETERS CONDITIONS LIMITS V+, INx Reference to GND -0.3 to 6 Sx, Dx Reference to GND -0.3 to (V+) +0.3 Maximum Continuous Switch Current 5 Maximum Peak Current (Pulsed 1 ms, 10 % Duty Cycle) 20 Thermal Resistance UNIT V mA 80 °C/W JESD78 > 800 mA ESD - HBM ANSI / ESDA / JEDEC® JS-001 > 8000 ESD - CDM JESD22-C101 > 500 Latch Up Current V Temperature Operating Temperature -40 to 85 Storage Temperature -65 to 150 °C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1059-Rev. A, 19-May-14 Document Number: 62962 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2501, DG2502, DG2503 www.vishay.com Vishay Siliconix ELECTRICAL CHARACTERISTICS 3 V Supply PARAMETER SYMBOL TEST CONDITION UNLESS OTHERWISE SPECIFIED, V+ = 3 V VINH = 1.4 V, VINL = 0.8 V a -40 °C to 85 °C TEMP. b TYP. c MIN. d MAX. d 0 3 UNIT Analog Switch Analog Signal Range e VANALOG Drain-Source On Resistance RDS(on) VS = 1.5 V, IS = -1 mA On-Resistance Matching Switch Off Leakage Current Channel On Leakage Current ΔRon Full - Room 133 - 200 Full - - 250 Room 0.83 - 10 Full - - 13 ± 0.016 -0.4 +0.4 IS/ID(off) V+ = 3.3 V, VS = 0.3 V/3 V, VD = 3 V/0.3 V Room Full - -1 +1 ID(on) V+ = 3.3 V, VD = 0.3 V/3 V Room ± 0.009 -0.4 +0.4 Full - -1 +1 V Ω nA Digital Control Input, High Voltage VINH Full - 1.4 - Input, Low Voltage VINL Full - - 0.4 Room ± 0.001 - - Full - -0.1 +0.1 - - Input Leakage IIN VIN = VGND or V+ Digital Input Capacitance e CIN f = 1 MHz Room 2 Break-Before Make Time tBBM DG2503 only, VS1 = VS2 = 1.5 V, RL = 300 Ω CL = 35 pF Room 47 10 - Full - 10 - Turn-On Time tON Room 175 - 220 Full - - 250 Room 77 - 100 Full - - 120 Room -0.7 - - V μA pF Dynamic Characteristics VS = 1.5 V, RL = 300 Ω, CL = 35 pF Turn-Off Time tOFF Charge Injection e QINJ Off Isolation e OIRR Cross Talk e X Talk 3 dB Bandwidth e BW Source Off Capacitance e Room -83 - - Room -85 - - RL = 50 Ω, CL = 5 pF Room 510 - - Room 2.9 - - f = 1 MHz, VS = 1.5 V Room 2.8 - - Room 7.8 - - Room 0.001 - - Full - - 1 RL = 50 Ω, CL = 5 pF, f = 1MHz CS(off) Drain Off Capacitance e CD(off) e CD(on) Drain On Capacitance CL = 1 nF, RGEN = 0 Ω, VS = 1.5 V ns pC dB MHz pF Power Requirements Power Supply Current S14-1059-Rev. A, 19-May-14 I+ Digital Input 0 or V+ μA Document Number: 62962 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2501, DG2502, DG2503 www.vishay.com Vishay Siliconix ELECTRICAL CHARACTERISTICS 5 V Supply PARAMETER SYMBOL TEST CONDITION UNLESS OTHERWISE SPECIFIED, V+ = 5 V VINH = 1.8 V, VINL = 0.5 V a -40 °C to 85 °C TEMP. b TYP. c MIN. d MAX. d UNIT Analog Switch Analog Signal Range e VANALOG Drain-Source On Resistance RDS(on) VS = 2.5 V, IS = -1 mA On-Resistance Matching Switch Off Leakage Current Channel On Leakage Current ΔRon Full - 0 5 Room 104 - 150 Full - - 200 Room 0.39 - 8 Full - - 10 +0.4 IS/ID(off) V+ = 5.5 V, VS = 1 V/4.5 V, VD = 4.5 V/1 V Room ± 0.022 -0.4 Full - -1 +1 ID(on) V+ = 5.5 V, VD = 4.5 V/1 V Room ± 0.017 -0.4 +0.4 Full - -1 +1 V Ω nA Digital Control Input, High Voltage VINH Full - 1.8 - Input, Low Voltage VINL Full - - 0.5 Room ± 0.001 - - Full - -1 +1 Input Leakage IIN VIN = VGND or V+ Digital Input Capacitance e CIN f = 1 MHz Room 2 - - tBBM DG2503 only, VS1 = VS2 = 3 V, RL = 300 Ω CL = 35 pF Room 25 10 - Full - 10 - Room 64 - 100 Full - - 150 Room 38 - 60 Full - - 100 Room -2 - - Room -84 - - Room -83 - - V μA pF Dynamic Characteristics Break-Before Make Time tON Turn-On Time VS = 3 V, RL = 300 Ω, CL = 35 pF Turn-Off Time tOFF Charge Injection e QINJ Off Isolation e OIRR Cross Talk e X Talk 3 dB Bandwidth e BW Source Off Capacitance e CS(off) Drain Off Capacitance e CD(off) e CD(on) Drain On Capacitance CL = 1 nF, RGEN = 0 Ω, VS = 3 V RL = 50 Ω, CL = 5 pF, f = 1MHz RL = 50 Ω, CL = 5 pF f = 1 MHz, VS = 3 V Room 550 - - Room 2.7 - - Room 2.6 - - Room 7.6 - - Room 4.6 - - Full - - 30 Room 0.001 - - Full - - 2 ns pC dB MHz pF Power Requirements Digital Input = 1.8 V, at one channel V+ = 5 V Power Supply Current I+ Digital Input 0 or V+ μA Notes a. VIN = input voltage to perform proper function. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The convention where the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. S14-1059-Rev. A, 19-May-14 Document Number: 62962 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2501, DG2502, DG2503 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 400 150 V+ = +1.8V 350 V+ = +3.0V 250 V+ = +4.5V 200 130 RON - On-Resistance (Ω) 300 RON - On-Resistance (Ω) + 125 °C 140 V+ = +2.7V V+ = +5.0V 150 100 120 110 100 TA = +25 °C 50 + 85 °C 0 + 25 °C V+ = +5 V IS = -1 mA 90 IS = -1 mA 80 0.0 1.0 2.0 3.0 4.0 0 5.0 1 2 3 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. Analog Voltage 5 1500 + 125 °C 170 160 + 85 °C 150 140 + 25 °C 130 120 V+ = +3 V IS = -1 mA 110 ID(OFF), VD= 4.5V,VS=1V , ID(ON), VD=4.5V 1000 Leakage Current (pA) RON - On-Resistance (Ω) 4 On-Resistance vs. Analog Voltage 180 - 40 °C 500 IS(OFF) VS= 4.5V,VD=1V 0 -500 ID(ON), VD=1V -1000 ID(OFF), VD = 1 V, VS = 4.5 V -1500 V+= + 5.5 V -2000 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40 -20 0 VD - Analog Voltage (V) On-Resistance vs. Analog Voltage IS(OFF), VS = 1 V, VD = 4.5 V 20 40 60 Temperature (°C) 80 100 120 Leakage Current vs. Temperature 1000 50 ID(OFF), VD= 3V,VS=0.3V ID(ON), VD=3V IS(OFF) VS= 3V,VD=0.3V 0 -500 ID(ON), VD=0.3V ID(OFF), VD= 0.3V,VS=3V -1000 V+ = +5V IN = V+ or GND 40 I+ - Supply Current (nA) 500 Leakage Current (pA) - 40 °C 30 V+ = +3V IN = V+ or GND 20 10 IS(OFF) VS= 0.3V,VD=3V V+= + 3.3 V -1500 0 -40 -20 0 20 40 60 80 100 Temperature (°C) Leakage Current vs. Temperature S14-1059-Rev. A, 19-May-14 120 -40 -20 0 20 40 60 80 100 120 Temperature (°C) Supply Current vs. Temperature Document Number: 62962 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2501, DG2502, DG2503 www.vishay.com Vishay Siliconix 6 1000 5.5 100 I+ - Supply Current (μA) I+ - Supply Current (μA) TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 5 4.5 4 V+ = +5V ONE INPUT = 1.8V OTHER INPUTS = GND or V+ 3.5 TA = +25 °C I+ PER LOGIC INPUT V+ = +5 V 10 1 0.1 0.01 0.001 3 0.0001 -40 -20 0 20 40 60 80 100 120 0 1 2 1000 5 0.0 TA = +25 °C I+ PER LOGIC INPUT V+ = +3 V 100 - 0.5 10 QINJ - Charge Injection (pC) I+ - Supply Current (μA) 4 Supply Current vs. VIN Supply Current vs. Temperature 1 0.1 0.01 0.001 V+ = 1.8 V - 1.0 V+ = 3 V - 1.5 V+ = 5 V - 2.0 - 2.5 - 3.0 0.0001 0.00001 - 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VIN (V) 0 2 3 VS - Analog Voltage (V) Supply Current vs. VIN Charge Injection vs. Analog Voltage 200 180 0 140 100 4 5 Loss - 10 160 120 1 10 V+ = +3 V, tON V+ = +5 V, tON V+ = +3 V, tOFF V+ = +3V, tBBM 80 60 Loss, OIRR, XTALK (dB) tON, tOFF,tBBM - Switching Time (ns) 3 VIN (V) Temperature (°C) - 20 - 30 V+ = +5 V RL = 50 Ω - 40 - 50 OIRR - 60 XTALK - 70 - 80 40 - 90 20 0 - 40 V+ = +5 V, tBBM V+ = +5 V, tOFF - 20 0 20 - 110 40 60 80 100 Temperature (°C) Switching Time vs. Temperature S14-1059-Rev. A, 19-May-14 - 100 120 100K 1M 10M Frequency (Hz) 100M 1G Loss, OIRR, XTALK vs. Frequency Document Number: 62962 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2501, DG2502, DG2503 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 1.0 0 TA = +25 °C Loss VIH 0.9 - 20 VT - Logic Threshold (V) Loss, OIRR, XTALK (dB) - 10 V+ = +3 V RL = 50 Ω - 30 - 40 - 50 OIRR - 60 XTALK - 70 VIL 0.8 0.7 - 80 0.6 - 90 - 100 - 110 100K 1M 10M Frequency (Hz) 0.5 1G 100M 1 2 2.5 3 3.5 4 4.5 5 5.5 V+ - Supply Voltage (V) Loss, OIRR, XTALK vs. Frequency Logic Threshold vs. Supply Voltage 1000 10 000 V+ = +5 V TA = +25 °C 100 I+ - Supply Current (μA) 1.5 V+ = +3 V TA = +25 °C 1000 I+ - Supply Current (μA) 10 1 0.1 0.01 0.001 0.0001 100 10 1 0.1 0.01 0.001 0.00001 0.0001 10 100 1000 10K 100K 1M Input Switching Frequency (Hz) 10M Supply Current vs. Input Switching Frequency 10 100 1000 10K 100K 1M Input Switching Frequency (Hz) 10M Supply Current vs. Input Switching Frequency 10 000 V+ = +5.0 V One Input = 0 V to +1.8 V TA = +25 °C I+ - Supply Current (μA) 1000 100 10 1 0.1 10 100 1000 10K 100K 1M 10M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency S14-1059-Rev. A, 19-May-14 Document Number: 62962 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2501, DG2502, DG2503 www.vishay.com Vishay Siliconix TEST CIRCUIT V+ VINH Logic Input VINL V+ S Switch Input tr < 5 ns tf < 5 ns 50 % Switch Output D VOUT 0.9 x VOUT Switch Output IN Logic Input RL 300 Ω GND CL 35 pF 0V tON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) RL V OUT = V D tOFF R L + R ON Fig. 3 - Switching Time V+ V OUT V+ Rgen D VOUT S VOUT + IN Vgen IN CL = 1 nF On On Off GND Q = V OUT x CL VIN = 0 - V+ IN depends on switch configuration: input polarity determined by sense of switch. Fig. 4 - Charge Injection V+ V+ 10 nF 10 nF V+ V+ S IN D 0 V, 2.4 V Meter D IN 0 V, 2.4 V RL S GND HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz Analyzer Off Isolation = 20 log Fig. 5 - Off-Isolation VD VS Fig. 6 - Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62962. S14-1059-Rev. A, 19-May-14 Document Number: 62962 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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