DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix Low Capacitance, Low Charge Injection, 4- / 8-Channel, Triple SPDT, ± 5 V / 12 V / 5 V / 3 V Analog Multiplexers DESCRIPTION FEATURES The DG4051E, DG4052E, and DG4053E are high precision CMOS analog multiplexers. The DG4051E is an 8-channel multiplexer, the DG4052E is a dual 4-channel multiplexer, and the DG4053E is a triple 2-channel multiplexer or triple SPDT. • 3 V to 16 V single supply or ± 3 to ± 8 V dual supply operation The DG4051E, DG4052E, and DG4053E feature low leakage, parasitic capacitance, and low charge injection of 0.3 pC over the full voltage range. These devices are ideal for high precision signal switching and multiplexing. • Less than 0.3 pC charge injection over the full signal swing range • Low parasitic capacitance: CD(ON): 8.5 pF / typ. (DG4053E) CS(OFF): 2.0 pF / typ. (DG4053E) • Low leakage: < 50 pA, typ. • Fast switching tON: 35 ns, typ. Designed to operate from a 3 V to 16 V single supply or from a ± 3 V to ± 8 V dual supplies, the DG4051E, DG4052E, and DG4053E are fully specified at 3 V, 5 V, 12 V and ± 5 V. All control logic inputs have guaranteed 2 V logic high limit when operating from 5 V or ± 5 V supplies and 1.4 V when operating from a 3 V supply. • 3 V logic compatible for control • Bi-directional rail to rail signal switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS All switches conduct equally well in both directions, offering rail to rail analog signal switching and can be used both as multiplexers as well as de-multiplexers. • Automatic test equipment • Process control and automation The DG4051E, DG4052E, and DG4053E operating temperature is specified from -40 °C to +125 °C and are available in 16 pin TSSOP and the ultra compact 1.8 mm x 2.6 mm miniQFN16 packages. • Data acquisition systems • Meters and instruments • Medical and healthcare systems • Communication systems BENEFITS • Audio and video signal routing • Wide operation voltage range • Relay replacement • Low charge injection • Battery powered systems • Low parasitic capacitance • Compact package option FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG4051E TSSOP16 DG4053E TSSOP16 DG4052E TSSOP16 X4 1 16 V+ Y0 1 16 V+ Y1 1 16 V+ X6 2 15 X2 Y2 2 15 X2 Y0 2 15 Y X 3 14 X1 Y 3 14 X1 Z1 3 14 X X7 4 13 X0 Y3 4 13 X Z 4 13 X1 X5 5 12 X3 Y1 5 12 X0 Z0 5 12 X0 ENABLE 6 11 A ENABLE 6 11 X3 ENABLE ENABLE 6 11 A 10 B 10 A V- 7 10 B 9 C 9 B GND 8 9 C V- 7 GND 8 Logic Top View V- 7 GND 8 Logic Top View Top View ENABLE = LO, all switches are controlled by addr pins. ENABLE = HI, all switches are off. S16-0623-Rev. A, 11-Apr-16 Document Number: 69685 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG4051E mQFN-16 DG4053E mQFN-16 DG4052E mQFN-16 X6 X4 V+ X2 Y2 Y0 V+ X2 Y0 Y1 V+ Y 16 15 14 13 16 15 14 13 16 15 14 13 X 1 12 X1 Y 1 12 X1 Z1 1 12 X X7 2 11 X0 Y3 2 11 X Z 2 11 X1 X5 3 10 X3 Y1 3 10 X0 Z0 3 10 X0 ENABLE 4 9 A ENABLE 4 9 X3 ENABLE 4 9 A Logic 5 V- 6 GND Logic 77 8 5 C B V- 6 7 8 5 GND B A V- Top View 6 GND 77 8 C B Top View Top View Exx Pin 1 Device Marking: Fxx for DG4051E (miniQFN16) Gxx for DG4052E Hxx for DG4053E xx = Date/Lot Traceability Code TRUTH TABLE SELECT INPUTS ON SWITCHES ENABLE INPUT C B A DG4051E DG4052E DG4053E H X X X All switches open All switches open All switches open L L L L X to X0 X to X0, Y to Y0 X to X0, Y to Y0, Z to Z0 L L L H X to X1 X to X1, Y to Y1 X to X1, Y to Y0, Z to Z0 L L H L X to X2 X to X2, Y to Y2 X to X0, Y to Y1, Z to Z0 L L H H X to X3 X to X3, Y to Y3 X to X1, Y to Y1, Z to Z0 L H L L X to X4 X to X0, Y to Y0 X to X0, Y to Y0, Z to Z1 L H L H X to X5 X to X1, Y to Y1 X to X1, Y to Y0, Z to Z1 L H H L X to X6 X to X2, Y to Y2 X to X0, Y to Y1, Z to Z1 L H H H X to X7 X to X3, Y to Y3 X to X1, Y to Y1, Z to Z1 ORDERING INFORMATION TEMPERATURE RANGE CONFIGURATION DG4051E -40 °C to +125 °C a Lead (Pb)-Free DG4052E DG4053E PACKAGE PART NUMBER MIN. ORDER / PACKAGING QUANTITY 16-pin TSSOP DG4051EEQ-T1-GE3 Tape and reel 3000 units 16-pin SOIC DG4051EEY-T1-GE3 Tape and reel 2500 units 16-pin miniQFN DG4051EEN-T1-GE4 Tape and reel 3000 units 16-pin TSSOP DG4052EEQ-T1-GE3 Tape and reel 3000 units 16-pin SOIC DG4052EEY-T1-GE3 Tape and reel 2500 units 16-pin miniQFN DG4052EEN-T1-GE4 Tape and reel 3000 units 16-pin TSSOP DG4053EEQ-T1-GE3 Tape and reel 3000 units 16-pin SOIC DG4053EEY-T1-GE3 Tape and reel 2500 units 16-pin miniQFN DG4053EEN-T1-GE4 Tape and reel 3000 units Note a. -40 °C to +85 °C datasheet limits apply. S16-0623-Rev. A, 11-Apr-16 Document Number: 69685 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER LIMIT V+ to VGND to VDigital Inputs UNIT -0.3 to +18 -18 a, VS, VD Continuous Current (any terminal) 30 Peak Current, S or D (pulsed 1 ms, 10 % duty cycle) 100 Storage Temperature mA -65 to +150 Power Dissipation b Thermal Resistance V (V-) - 0.3 to (V+) + 0.3 or 30 mA, whichever occurs first b 16-pin TSSOP c 450 16-pin miniQFN d, f 525 16-pin narrow SOIC e 640 16-pin TSSOP c 178 16-pin miniQFN d, f 152 16-pin narrow SOIC e 125 °C mW °C/W ESD Human Body Model (HBM); per ANSI / ESDA / JEDEC® JS-001 2500 V Latch Up Current, per JESD78D 400 mA Notes a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 5.6 mW/°C above 70 °C. d. Derate 6.6 mW/°C above 70 °C. e. Derate 8.0 mW/°C above 70 °C. f. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS FOR DUAL SUPPLIES PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 5 V, V- = -5 V VIN(A, B, C, and enable) = 2 V, 0.8 V a -40 °C to +125 °C -40 °C to +85 °C TEMP. b TYP. c MIN. d MAX. d MIN. d MAX. d UNIT Analog Switch Analog Signal Range e VANALOG On-Resistance RON RON IS = 1 mA, VD = ± 3 V RFLATNESS IS = 1 mA, VD = -3 V, 0 V, 3 V On-Resistance Match On-Resistance Flatness IS = 1 mA, VD = -3 V, 0 V, 3 V Switch Off Leakage Current IS(off) ID(off) Channel On Leakage Current V+ = 5.5 V, V- = -5.5 V, VD = ± 4.5 V, VS = 4.5 V Full - -5 5 -5 5 Room 68 - 78 - 78 97 Full - - 106 - Room 0.91 - 6 - 6 Full - - 6 - 6 Room 10 - 17 - 17 Full - - 20 - 19 Room ± 0.05 -1 1 -1 1 Full - -50 50 -5 5 Room ± 0.05 -1 1 -1 1 Full - -50 50 -5 5 ID(on) V+ = 5.5 V, V- = -5.5 V, VS = VD = ± 4.5 V Room ± 0.05 -1 1 -1 1 Full - -50 50 -5 5 V nA Digital Control Input Current, VIN Low IIL VIN(A, B, C, and enable) under test = 0.6 V Full 0.02 -1 1 -1 1 Input Current, VIN High IIH VIN(A, B, C, and enable) under test = 2 V Full 0.02 -1 1 -1 1 Input Capacitance e CIN f = 1 MHz Room 3.4 - - - - S16-0623-Rev. A, 11-Apr-16 μA pF Document Number: 69685 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 5 V, V- = -5 V VIN(A, B, C, and enable) = 2 V, 0.8 V a -40 °C to +125 °C -40 °C to +85 °C TEMP. b TYP. c f = 100 kHz Room -106 - - - - f = 10 MHz Room -68 - - - - MIN. d MAX. d MIN. d MAX. d UNIT Dynamic Characteristics Off Isolation e OIRR RL = 50 , CL = 1 pF Channel-to-Channel Crosstalk e Bandwidth, 3 dB Transition Time XTALK BW tON Enable Turn-Off Time tOFF Break-Before-Make Time Delay tD Charge Injection e Q Drain Off Capacitance e Channel On Capacitance e Total Harmonic Distortion e Room -49 - - - - f = 100 kHz Room -105 - - - - f = 10 MHz Room -62 - - - - f = 100 MHz Room -51 - - - - DG4051E Room 308 - - - - DG4052E Room 353 - - - - DG4053E Room 930 - - - - Room 72 - 112 - 112 Full - - 139 - 131 Room 35 - 75 - 75 Full - - 86 - 80 Room 48 - 88 - 88 tTRANS Enable Turn-On Time Source Off Capacitance e RL = 50 f = 100 MHz CS(off) CD(off) CD(on) THD RL = 300 , CL = 35 pF see Fig. 1, 2, 3 Full - - 97 - 95 Room - 1 - 1 - Full - - - - - Room 0.38 - - - - DG4051E Room 2.2 - - - - DG4052E Room 2.1 - - - - DG4053E Room 2 - - - - DG4051E Room 9.2 - - - - DG4052E Room 4.8 - - - - DG4053E Room 3.1 - - - - DG4051E Room 14.9 - - - - DG4052E Room 10 - - - - DG4053E Room 8.5 - - - - Room 0.065 - - - - Room 0.05 - 1 - 1 Full - - 10 - 10 Room -0.05 -1 - -1 - Full - -10 - -10 - Room -0.05 -1 - -1 - Full - -10 - -10 - Vg = 0 V, Rg = 0 , CL = 1 nF f = 1 MHz f = 1 MHz f = 1 MHz Signal = 5 VRMS, 20 Hz to 20 kHz, RL = 600 dB MHz ns pC pF % Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current IGND S16-0623-Rev. A, 11-Apr-16 V+ = 5 V, V- = -5 V VIN(A, B, C, and enable) = 0 V or 5 V μA Document Number: 69685 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR UNIPOLAR SUPPLIES PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 12 V, V- = 0 V VIN(A, B, C, and enable) = 2 V, 0.8 V a -40 °C to +125 °C -40 °C to +85 °C TEMP. b TYP. c MIN. d MAX. d MIN. d MAX. d UNIT Analog Switch Analog Signal Range e VANALOG On-Resistance RON RON IS = 1 mA, VD = 11.3 V RFLATNESS IS = 1 mA, VD = 0.7 V, 11.3 V On-Resistance Match On-Resistance Flatness IS = 1 mA, VD = 0.7 V, 11.3 V Switch Off Leakage Current IS(off) ID(off) V+ = 13.2 V, V- = 0 V VD = 1 V / 12.2 V, VS = 12.2 V / 1 V Full - 0 12 0 12 Room 85 - 103 - 103 125 Full - - 133 - Room 1.24 - 8 - 8 Full - - 8 - 8 Room 27 - 37 - 37 Full - - 44 - 43 Room ± 0.05 -1 1 -1 1 Full - -50 50 -5 5 Room ± 0.05 -1 1 -1 1 Full - -50 50 -5 5 Room ± 0.05 -1 1 -1 1 Full - -50 50 -5 5 ID(on) V+ = 13.2 V, V- = 0 V VD = VS = 1 V / 12.2 V Input Current, VIN Low IL VIN(A, B, C, and enable) under test = 0.8 V Full 0.02 -1 1 -1 1 Input Current, VIN High IH VIN(A, B, C, and enable) under test = 2 V Full 0.02 -1 1 -1 1 Room 43 - 83 - 83 Full - - 95 - 90 Room 22 - 62 - 62 Full - - 71 - 67 Room 47 - 87 - 87 93 Channel On Leakage Current V nA Digital Control μA Dynamic Characteristics Transition Time tTRANS Enable Turn-On Time tON Enable Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injection e tD Q Off Isolation e OIRR Channel-to-Channel Crosstalk e XTALK Source Off Capacitance e CS(off) Drain Off Capacitance e Channel On Capacitance e RL = 300 , CL = 35 pF see Fig. 1, 2, 3 CD(off) CD(on) Full - - 94 - Room 25 1 - 1 - Full - - - - - Vg = 0 V, Rg = 0 , CL = 1 nF Full - - - - - RL = 50 , CL = 1 pF f = 100 kHz Room - - - - - Room - - - - - DG4051E Room - - - - - DG4052E Room - - - - - DG4053E Room - - - - - DG4051E Room - - - - - DG4052E Room - - - - - DG4053E Room - - - - - DG4051E Room - - - - - DG4052E Room - - - - - DG4053E Room - - - - - Room 0.05 - 1 - 1 Full - - 10 - 10 Room -0.05 -1 - -1 - Full - -10 - -10 - Room -0.05 -1 - -1 - Full - -10 - -10 - f = 1 MHz f = 1 MHz f = 1 MHz ns pC dB pF Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current IGND S16-0623-Rev. A, 11-Apr-16 VIN(A, B, C, and enable) = 0 V or 5 V μA Document Number: 69685 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR UNIPOLAR SUPPLIES PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 5 V, V- = 0 V VIN(A, B, C, and enable) = 2 V, 0.8 V a -40 °C to +125 °C -40 °C to +85 °C TEMP. b TYP. c MIN. d MAX. d MIN. d MAX. d UNIT Analog Switch Analog Signal Range e VANALOG On-Resistance RON RON IS = 1 mA, VD = 3.5 V RFLATNESS IS = 1 mA, VD = 0 V, 3 V On-Resistance Match On-Resistance Flatness IS = 1 mA, VD = 0 V, 3.5 V Switch Off Leakage Current IS(off) ID(off) V+ = 5.5 V, V- = 0 V VD = 1 V / 4.5 V, VS = 4.5 V / 1 V Full - 0 5 0 5 Room 125 - 147 - 147 Full - - 176 - 168 Room 1.3 - 8 - 8 Full - - 8 - 8 Room 21 - 31 - 31 Full - - 25 - 29 Room ± 0.03 -1 1 -1 1 Full - -50 50 -5 5 Room ± 0.03 -1 1 -1 1 Full - -50 50 -5 5 Room ± 0.03 -1 1 -1 1 Full - -50 50 -5 5 ID(on) V+ = 5.5 V, V- = 0 V VD = VS = 1 V / 4.5 V Input Current, VIN Low IL VIN(A, B, C, and enable) under test = 0.6 V Full 0.02 -1 1 -1 1 Input Current, VIN High IH VIN(A, B, C, and enable) under test = 2 V Full 0.02 -1 1 -1 1 Room 95 - 135 - 135 Full - - 169 - 148 Room 56 - 96 - 96 Full - - 117 - 107 Room 55 - 95 - 95 103 Channel On Leakage Current V nA Digital Control μA Dynamic Characteristics Transition Time tTRANS Enable Turn-On Time tON Enable Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injection e Q OIRR Channel-to-Channel Crosstalk e XTALK Source Off Capacitance e CS(off) Channel On Capacitance e Full - - 110 - Room - 12 - 12 - Full - - - - - Vg = 0 V, Rg = 0 , CL = 1 nF Full 0.32 - - - - RL = 50 , CL = 1 pF f = 100 kHz Room -86 - - - - Room -105 - - - - DG4051E Room 2.4 - - - - DG4052E Room 2.4 - - - - DG4053E Room 2.3 - - - - DG4051E Room 10.1 - - - - DG4052E Room 5.3 - - - - DG4053E Room 3.4 - - - - DG4051E Room 15.9 - - - - DG4052E Room 10.6 - - - - DG4053E Room 8.9 - - - - Room 0.05 - 1 - 1 Full - - 10 - 10 Room -0.05 -1 - -1 - Full - -10 - -10 - Room -0.05 -1 - -1 - Full - -10 - -10 - tD Off Isolation e Drain Off Capacitance e RL = 300 , CL = 35 pF see Fig. 1, 2, 3 CD(off) CD(on) f = 1 MHz f = 1 MHz f = 1 MHz ns pC dB pF Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current IGND S16-0623-Rev. A, 11-Apr-16 VIN(A, B, C, and enable) = 0 V or 5 V μA Document Number: 69685 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR UNIPOLAR SUPPLIES PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 3 V, V- = 0 V VIN(A, B, C, and enable) = 1.4 V, 0.6 V a -40 °C to +125 °C -40 °C to +85 °C TEMP. b TYP. c MIN. d MAX. d MIN. d MAX. d UNIT Analog Switch Analog Signal Range e VANALOG On-Resistance Switch Off Leakage Current RON IS(off) ID(off) Channel On Leakage Current IS = 1 mA, VD = 1.5 V V+ = 3.3 V, V- = 0 V VD = 0.3 V / 3 V, VS = 3 V / 0.3 V Full - 0 3 0 3 V Room 221 - - - - Full - - - - - Room ± 0.02 -1 1 -1 1 Full - -50 50 -5 5 Room ± 0.02 -1 1 -1 1 Full - -50 50 -5 5 Room ± 0.02 -1 1 -1 1 Full - -50 50 -5 5 ID(on) V+ = 3.3 V, V- = 0 V VD = VS = 0.3 V / 3 V Input Current, VIN Low IL VIN(A, B, C, and enable) under test = 0.6 V Full 0.02 -1 1 -1 1 Input Current, VIN High IH VIN(A, B, C, and enable) under test = 1.4 V Full 0.02 -1 1 -1 1 Room 200 - - - - Full - - - - - Room 130 - - - - Full - - - - - Room 78 - - - - nA Digital Control μA Dynamic Characteristics Transition Time tTRANS Enable Turn-On Time tON Enable Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injection e Q OIRR Channel-to-Channel Crosstalk e XTALK Source Off Capacitance e CS(off) Channel On Capacitance e Full - - - - Room 130 - - - - Full - - - - - Vg = 0 V, Rg = 0 , CL = 1 nF Room 0.34 - - - - RL = 50 , CL = 1 pF f = 100 kHz Room -88 - - - - Room -105 - - - - DG4051E Room 2.6 - - - - DG4052E Room 2.6 - - - - DG4053E Room 2.5 - - - - DG4051E Room 10.7 - - - - DG4052E Room 5.7 - - - - DG4053E Room 3.6 - - - - DG4051E Room 16.4 - - - - DG4052E Room 10.9 - - - - DG4053E Room 9.1 - - - - Room 0.05 - 1 - 1 Full - - 10 - 10 Room -0.05 -1 - -1 - Full - -10 - -10 - Room -0.05 -1 - -1 - Full - -10 - -10 - tD Off Isolation e Drain Off Capacitance e RL = 300 , CL = 35 pF see Fig. 1, 2, 3 CD(off) CD(on) f = 1 MHz f = 1 MHz f = 1 MHz ns pC dB pF Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current IGND VIN(A, B, C, and enable) = 0 V or 3 V μA Notes a. VIN = input voltage to perform proper function. b. Room = 25 °C, full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. S16-0623-Rev. A, 11-Apr-16 Document Number: 69685 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 400 140 V+ = +3.0 V, V- = 0 V TA = 25 °C IS = -1 mA 300 V+ = +5.0 V, V- = 0 V 250 200 150 V+ = +12.0 V, V- =0 V V+ = +16.0 V, V- = 0 V 100 0 V+ = +8.0 V, V- = -8.0 V 80 V+ = +5.0 V, V- = -5.0 V 60 40 0 0 2 4 6 8 10 12 14 16 18 -10 -8 -6 -4 -2 0 2 4 6 8 10 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. Analog Voltage (Single Supply) On-Resistance vs. Analog Voltage (Dual Supply) 140 225 V+ = +5 V v- = 0 V IS = 1 mA 200 175 +125 °C +85 °C 150 125 100 75 -40 °C +25 °C 50 V+ = +12 V v- = 0 V IS = 1 mA 120 RON - On-Resistance () RON - On-Resistance () 100 20 50 100 +125 °C 0 +85 °C 80 60 40 +25 °C 20 25 -40 °C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 1 2 3 4 5 6 7 8 9 10 11 12 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. Analog Voltage (Temperature) On-Resistance vs. Analog Voltage (Temperature) 140 10 000 V+ = +5 V v- = -5 V IS = 1 mA 120 V+ = +5 V V- = -5 V 1000 I+ 100 +125 °C +85 °C 100 Supply Current (μA) RON - On-Resistance () TA = 25 °C IS = -1 mA 120 RON - On-Resistance () RON - On-Resistance () 350 80 60 I- 10 1 0.1 IGND 0.01 0.001 40 0.0001 -40 °C +25 °C 20 0.00001 0 0.000001 -5 -4 -3 -2 -1 0 1 2 3 4 5 10 100 1000 10K 100K 1M 10M VD - Analog Voltage (V) Input Switching Frequency (Hz) On-Resistance vs. Analog Voltage (Temperature) Supply Current vs. Input Switching Frequency S16-0623-Rev. A, 11-Apr-16 Document Number: 69685 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 000 100 000 V+ = +5.5 V V- = -5.5 V ID(ON), VD = 4.5 V V+ = +13.2 V V- = -0 V 10 000 Leakage Current (pA) Leakage Current (pA) 10 000 ID(OFF), VD = 4.5 V, VS = -4.5 V 1000 IS(OFF), VD = 4.5 V, VS = -4.5 V 100 10 ID(OFF), VD = 12.2 V, VS = 1.0 V 1000 IS(OFF), VD = 12.2 V, VS = 1.0 V 100 10 1 1 -60 -40 -20 0 20 40 60 80 100 120 140 -60 -40 -20 20 40 60 80 100 120 140 Temperature (°C) Leakage Current vs. Temperature Leakage Current vs. Temperature 80 V+ = +3 V, V- = 0 V, tON V+ = +5 V, V- = -5 V, tOFF 70 150 V+ = +3 V, V- = 0 V, tOFF 125 V+ = +5 V, V- = 0 V, tOFF 100 V+ = +12 V, V- = 0 V, tOFF V+ = +5 V, V- = 0 V, tON 75 50 V+ = +12 V, V- = 0 V, tON V+ = +16 V, V- = 0 V, tON tON(EN), tOFF(EN) - Switching Time (ns) 175 tON(EN), tOFF(EN) - Switching Time (ns) 0 Temperature (°C) 200 25 ID(ON), VD = 12.2 V V+ = +16 V, V- = 0 V, tOFF 0 -60 -10 40 90 V+ = +8 V, V- = -8 V, tOFF 60 V+ = +5 V, V- = 5 V, tON 50 40 30 20 V+ = +8 V, V- = -8 V, tON 10 0 140 -60 -10 40 90 140 Temperature (°C) Temperature (°C) Switching Time vs. Temperature (Single Supply) Switching Time vs. Temperature (Dual Supply) 0 0 -10 -10 Loss, OIRR, XTALK (dB) Loss -20 Loss, OIRR, XTALK (dB) Loss -20 -30 -40 OIRR -50 XTALK -60 -70 DG4051E V+ = +5 V V- = -5 V RL = 50 -80 -90 -100 -110 100K -30 -40 OIRR -50 XTALK -60 -70 DG4052E V+ = +5 V V- = -5 V RL = 50 -80 -90 -100 -110 100K 1M 10M 100M 1G 1M 10M 100M 1G Frequency (Hz) Frequency (Hz) DG4051E Insertion Loss, Off-Isolation, Crosstalk vs. Frequency S16-0623-Rev. A, 11-Apr-16 DG4052E Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Document Number: 69685 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0 -10 Loss VT - Switching Threshold (V) Loss, OIRR, XTALK (dB) -20 -30 -40 OIRR -50 XTALK -60 -70 DG4053E V+ = +5 V V- = -5 V RL = 50 -80 -90 -100 -110 100K 1M 10M 100M -40 °C to +125 °C VIH = -40 °C VIL = 125 °C 0 1G 2 4 6 8 10 12 14 16 18 20 Frequency (Hz) V+ - Supply Voltage (V) DG4053E Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Switching Threshold vs. V+ Supply Voltage 1.0 1.0 0.8 0.8 V+ = 5 V V- = 0 V 0.4 0.2 V+ = 5 V V- = -5 V 0 V+ = 5 V V- = 0 V 0.6 QINJ - Charge Injection (pC) V+ = 3 V V- = 0 V 0.6 QINJ - Charge Injection (pC) 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 0.4 0.2 V+ = 3 V V- = 0 V 0 -0.2 -0.4 V+ = 5 V V- = -5 V -0.6 -0.8 -1.0 -1.0 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 VS - Analog Voltage (V) VS - Analog Voltage (V) DG4051E Charge Injection vs. Analog Voltage DG4053E Charge Injection vs. Analog Voltage 1.0 0.8 V+ = 5 V V- = -5 V QINJ - Charge Injection (pC) 0.6 0.4 0.2 0 V+ = 5 V V- = 0 V -0.2 -0.4 V+ = 3 V V- = 0 V -0.6 -0.8 -1.0 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 VS - Analog Voltage (V) DG4052E Charge Injection vs. Analog Voltage S16-0623-Rev. A, 11-Apr-16 Document Number: 69685 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix SCHEMATIC DIAGRAM (Typical Channel) V+ X, Y, Z A, B VBody snatcher GND Level shift C V+ V- Decode/ drive X0, Y0, Z0 VEN Xn, Yn, Zn V- V- TEST CIRCUITS V+ V+ 50 Ω X0 A B C VX0 VA,B,C 50 % 0V X1 - X6 DG4051E X7 VX0 or VY0 or VZ0 VX7 VO X ENABLE GND 300 Ω 35 pF 90 % VO VX7 VX3 or VY3 VX1 or VY1 or VZ1 tTRANS V- X0 or Y0 or Z0 ON V+ X0 or Y0 VX0 or VY0 X1 - X2 or Y1 - Y2 DG4052E X3 or Y3 VX3 or VY3 A B 50 Ω 90 % ENABLE VO X or Y GND tTRANS X7 ON (DG4051E) or X3 or Y3 ON (DG4052E) or X1 or Y1 or Z1 ON (DG4053E) 300 Ω 35 pF VV+ X0 or Y0 or Z0 A or B or C VX0 or VY0 or VZ0 50 Ω DG4053E X1 or Y1 or Z1 ENABLE VX1 or VY1 or VZ1 VO X or Y or Z GND 300 Ω 35 pF V- Fig. 1 - Transition Time S16-0623-Rev. A, 11-Apr-16 Document Number: 69685 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix TEST CIRCUITS V+ V+ X0 A B C V+ VENABLE X1 - X7 DG4051E VX0 or VY0 or VZ0 VO X ENABLE GND 50 Ω 50 % 0V 300 Ω 90 % VO 35 pF 90 % 0V t OFF V- X0 or Y0 or Z0 ON V+ X0 or Y0 A B t ON X7 ON (DG4051E) or X3 or Y3 ON (DG4052E) or X1 or Y1 or Z1 ON (DG4053E) V+ X1 - X3 or Y1 - Y3 DG4052E 50 Ω VO X or Y ENABLE GND 300 Ω 35 pF VV+ X0 or Y0 or Z0 A or B or C V+ X1 or Y1 or Z1 DG4053E ENABLE 50 Ω VO X or Y or Z GND 300 Ω 35 pF V- Fig. 2 - Enable Switching Time S16-0623-Rev. A, 11-Apr-16 Document Number: 69685 12 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix TEST CIRCUITS V+ V+ 50 Ω X0 - X7 A B C V+ 50 % VA,B,C DG4051E 0V VX0 or VY0 or VZ0 GND 300 Ω 80 % VO VO X ENABLE 35 pF 0V tD VV+ X0 - X3 or Y0- Y3 A B V+ 50 Ω DG4052E VO X or Y ENABLE GND 300 Ω 35 pF VV+ A or B or C X0, X1 or Y0, Y1 or Z0, Z1 V+ 50 Ω DG4053E VO X or Y or Z ENABLE GND 300 Ω 35 pF V- Fig. 3 - Break-Before-Make V+ tr < 5 ns tf < 5 ns Channel Select V+ A B C VENABLE Rg OFF ON OFF 0V Xx or Yx or Zx Vg VO ENABLE VO X or Y or Z GND ΔVO 1 nF V- Fig. 4 - Charge Injection S16-0623-Rev. A, 11-Apr-16 Document Number: 69685 13 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG4051E, DG4052E, DG4053E www.vishay.com Vishay Siliconix TEST CIRCUITS V+ V+ Network Analyzer Network Analyzer VIN A B C A B C X0 or Y0 or Z0 Rg = 50 Ω Vg X or Y or Z ENABLE VOUT V+ GND VIN X0 or Y0 or Z0 VOUT X or Y or Z ENABLE GND 50 Ω Rg = 50 Ω Vg 50 Ω V- V- Insertion Loss = 20 log Off Isolation = 20 log VOUT VIN Fig. 5 - Insertion Loss VOUT VIN Fig. 7 - Off Isolation V+ V+ Network Analyzer A B C X0 or Y0 or Z0 VIN Vg Rg = 50 Ω Channel Select A B C X0 or Y0 or Z0 | to | Xx or Yx or Zx X or Y or Z 50 Ω ENABLE Xx or Yx or Zx VOUT GND 50 Ω ENABLE Impedance Analyzer X or Y or Z GND VCrosstalk = 20 log VOUT VIN Fig. 6 - Crosstalk V- Fig. 8 - Source, Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69685. S16-0623-Rev. A, 11-Apr-16 Document Number: 69685 14 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information www.vishay.com Vishay Siliconix miniQFN-16L (1) (2) (4) (3) L1 (12) (11) (10) (9) (5) (16) L D (8) (14) (7) (15) (6) (16) (5) (15) (6) (14) (7) (13) (8) E (13) (12) (11) (10) (9) (1) (2) (3) (4) b DIM e A C A1 BACK SIDE VIEW MILLIMETERS INCHES MIN. NAM MAX. MIN. NAM MAX. A 0.70 0.75 0.80 0.0275 0.0295 0.0315 A1 0 - 0.05 0 - 0.002 b 0.15 0.20 0.25 0.0059 0.0078 0.0098 C 0.15 0.20 0.25 0.0059 0.0078 0.0098 D 2.50 2.60 2.70 0.0984 0.1023 0.1063 E 1.70 1.80 1.90 0.0669 0.0708 0.0748 e 0.40 BSC 0.0157 BSC L 0.35 0.40 0.45 0.0137 0.0157 0.0177 L1 0.45 0.50 0.55 0.0177 0.0196 0.0216 ECN T16-0234-Rev. B, 09-May-16 DWG: 5954 Revision: 09-May-16 1 Document Number: 74323 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR TSSOP-16 0.193 (4.90) 0.171 0.014 0.026 0.012 (0.35) (0.65) (0.30) (4.35) (7.15) 0.281 0.055 (1.40) Recommended Minimum Pads Dimensions in inches (mm) Revision: 02-Sep-11 1 Document Number: 63550 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 16L 0.562 (0.0221) 0.400 (0.0157) 0.225 (0.0089) 1 2.900 (0.1142) 0.463 (0.0182) 1.200 (0.0472) 2.100 (0.0827) Mounting Footprint Dimensions in mm (inch) Document Number: 66557 Revision: 05-Mar-10 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000